IRF 332,333 SOWERMOS FET FIELD EFFECT POWER TRANSISTOR 4.5 AMPERES 400, 350 VOLTS RpSs(ON) =1.50 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear N-CHANNEL ) G CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear 0.882147) 9.00) MAK applications such as audio amplifiers and servo motors. on OIA, Features 7 jaw SEATING PLANE 9.043(1.09) nya | bm .426(10.82) MIN. 0.038(0.87) Polysilicon gate Improved stability and reliability e No secondary breakdown Excellent ruggedness 1,050(26.68) MAX.*) 9.675(17.15) 0.650(16.51) e Ultra-fast switching Independent of temperature 5 Voltage controlled High transconductance CAST TEMP. ata : . : . POINT 1,573(39.96) e Low input capacitance Reduced drive requirement 2016.00' MAX, age . beac e Excellent thermal stability Ease of paralleling DRAIN 9225(5.72)- DRAIN Gi 216 90) DIA. 0.205(5.21) (CASE) 2 HOLES 0.440(11.18) 0.420(10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF332 IRF333 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Ras = 1M0 VpGR 400 350 Volts Continuous Drain Current@ To = 25C Ip 4.5 4.5 A Te = 100C 3.0 3.0 A Pulsed Drain Current IDM 18 18 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 W/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Rasa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 151 electrical characteristics (To = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX UNIT off characteristics Drain-Source Breakdown Voltage IRF332 | BVpss 400 _ _ Volts (Vag = OV, Ip = 250 pA) IRF333 350 Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vas = OV, To = 25C) _ _ 250 vA (Vps = Max Rating, 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current . (V@s = +20V) lass _ +100 nA on characteristics Gate Threshold Voltage To = 25C | VaesctH) 2.0 _ 4.0 Volts (Vps = Vas, Ip = 250 vA) On-State Drain Current _ _ (Vg = 10V, Vps = 10V) ID(ON) 45 A Static Drain-Source On-State Resistance _ (Vgs = 10V, Ip = 3.0A) Rps(ON) 1.2 1.5 Ohms Forward Transconductance (Vps = 10V, Ip = 3.0A) Ots 2.1 2.5 _~ mhos dynamic characteristics Input Capacitance Vag = OV Ciss _ 650 800 pF Output Capacitance Vos = 25V Coss 100 300 pF Reverse Transfer Capacitance f= 1 MHz Crss 15 80 pF switching characteristics* Turn-on Delay Time Vos = 175V tdion) 15 ns Rise Time Ip = 3A, Vas = 15V tr ~~ 20 _ ns Turn-off Delay Time RoGeEN = 500, Reg = 12.50 ta(off) _ 30 _ ns Fall Time (Res (EQuiv.) = 102) tf _ 20 ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 45 A Pulsed Source Current Ism _ 18 A Diode Forward Voltage Vv 0. 1. (To = 25C, Vag = OV, Ig = 4.5A) SD 9 8 Volts Reverse Recovery Time tre 360 ns (Ig = 5.5A, dlg/dt = 100A/us, Tc = 125C) Qrr _ 4.0 _ pC *Pulse Test: Pulse width < 300 ws, duty cycle = 2% 100 2.4 60 40 2.2 Rps(oOn) CONDITIONS: Ip = 3.0 A, Vgg = 10V 20 Vgs(TH) CONDITIONS: ip = 250nA, Vg = Vag os a q 20 W218 & a W410 < 16 2: z 2 6 S14 & 2 z 4 = a = 1.2 a oO 2 2 > 10 a 3 1.0 2 og OPERATION IN THIS AR _ 08 2 6 Y BE LIMITED BY R 5 og 2 g | SI PU = 04 Tph= 0.2 oC IR 02 iR 0 1 2 4 6 810 20 40 60 80100 200 400 600 1000 -40 0 40 80 120 160 Vpg- DRAIN -SOURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rocion; AND Vesirw) VS. TEMP. 152