GC50MPS12-247
1200 V SiC MPS™ Diode
Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247.pdf Page 1 of 7
Silicon Carbide Schottky Diode
Features Package
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit Q
C
/I
F
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of V
F
•
Extremely Fast Switching Speeds
TO-247-2L
Advantages Applications
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• Low Device Capacitance
•
Low Reverse Leakage Current
• Boost Diode in Power Factor Correction (PFC)
• Switched Mode Power Supply (SMPS)
• Uninterruptible Power Supply (UPS)
• Motor Drives
• Freewheeling / Anti-parallel Diode in Inverters
• Solar Inverters & Wind Energy Converters
• Electric Vehicles (EV) & DC Fast Charging
•
Induction Heating & Welding
Absolute Maximum Ratings
(At T
C
= 25 °C Unless Otherwise Stated)
Parameter Symbol Conditions Values Unit
Repetitive Peak Reverse Voltage V
RRM
1200 V
Continuous Forward Current I
F
T
C
= 25 °C, D = 1 212
A
T
C
= 135 °C, D = 1 103
T
C
= 163 °C, D = 1 50
Non-Repetitive Peak Forward Surge
Current, Half Sine Wave I
F,SM
T
C
= 25 °C, t
P
= 10 ms 300 A
T
C
= 150 °C, t
P
= 10 ms 240
Repetitive Peak Forward Surge Current,
Half Sine Wave I
F,RM
T
C
= 25 °C, t
P
= 10 ms 160 A
T
C
= 150 °C, t
P
= 10 ms 105
Non-Repetitive Peak Forward Surge
Current I
F,max
T
C
= 25 °C, t
P
= 10 µs 1800 A
i
2
t Value ∫i
2
dt T
C
= 25 °C, t
P
= 10 ms 450 A
2
s
Non-Repetitive Avalanche Energy E
AS
L = 0.4 mH, I
AS
= 50 A 450 mJ
Diode Ruggedness dV/dt V
R
= 0 ~ 960 V 100 V/ns
Power Dissipation P
tot
T
C
= 25 °C 1228 W
Operating and Storage Temperature T
j
, T
stg
-55 to 175 °C
V
RRM
= 1200 V
I
F (Tc
=
135°C)
= 103 A
Q
C
= 199 nC
2
1
GC50MPS12-247
1200 V SiC MPS™ Diode
Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247.pdf Page 2 of 7
Electrical Characteristics
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Diode Forward Voltage V
F
I
F
= 50 A, T
j
= 25 °C
1.5 1.8 V
I
F
= 50 A, T
j
= 175 °C
2 2.4
Reverse Current I
R
V
R
= 1200 V, T
j
= 25 °C
4 40 µA
V
R
= 1200 V, T
j
= 175 °C
12 144
Total Capacitive Charge Q
C
I
F
≤ I
F,MAX
dI
F
/dt = 200 A/μs
T
j
= 175 °C
V
R
= 400 V
135 nC
V
R
= 800 V
199
Switching Time t
s
V
R
= 400 V
< 10 ns
V
R
= 800 V
Total Capacitance C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
3263 pF
V
R
= 800 V, f = 1 MHz, T
j
= 25 °C
249
Thermal / Mechanical Characteristics
Thermal Resistance, Junction - Case R
thJC
0.1 °C/W
Weight W
T
6 g
Mounting Torque T
M
1.1 Nm
GC50MPS12-247
1200 V SiC MPS™ Diode
Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247.pdf Page 3 of 7
I
F
= f(V
F
,T
j
); t
P
= 10 µs I
F
= f(V
F
,T
j
); t
P
= 10 µs
Figure 1: Typical Forward Characteristics Figure 2: Typical High Current Forward
Characteristics
I
R
= f(V
R
,T
j
) P
tot
= f(T
C
)
Figure 3: Typical Reverse Characteristics Figure 4: Power Derating Curve
GC50MPS12-247
1200 V SiC MPS™ Diode
Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247.pdf Page 4 of 7
I
F
= f(T
C
); D = t
P
/T, t
P
= 10 µs C = f(V
R
); T
j
= 25 °C; f = 1 MHz
Figure 5: Current Derating Curves Figure 6: Typical Junction Capacitance vs
Reverse Voltage Characteristics
Q
c
= f(V
R
); T
j
= 25 °C; f = 1 MHz E
C
= f(V
R
); T
j
= 25 °C; f = 1 MHz
Figure 7: Typical Capacitive Charge vs Reverse
Voltage Characteristics
Figure 8: Typical Capacitive Energy vs Reverse
Voltage Characteristics
GC50MPS12-247
1200 V SiC MPS™ Diode
Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247.pdf Page 5 of 7
Z
th,jc
= f(t
P
,D); D = t
P
/T
Figure 9: Transient Thermal Impedance
I
F
= (V
F
– V
BI
)/R
DIFF
(A)
Built-In Voltage (V
BI
):
V
BI
(T
j
) = m*T
j
+ n (V)
m = -1.62e-03, n = 1.01
Differential Resistance (R
DIFF
):
R
DIFF
(T
j
) = a*T
j2
+ b*T
j
+ c (Ω);
a = 2.50e-07, b = 4.19e-05, c = 0.00885
I
F
= f(V
F
, T
j
)
Figure 10: Forward Curve Model
GC50MPS12-247
1200 V SiC MPS™ Diode
Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247.pdf Page 6 of 7
Package Dimensions
TO-247-2L Package Outline
Recommended Solder Pad Layout
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
GC50MPS12-247
1200 V SiC MPS™ Diode
Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved
The information in this document is subject to change without notice
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Aug 2018 Rev1.2
Page 7 of 7
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also
referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in
accordance with EU Directive 2011/65/EC (RoHS), as implemented November 15, 2017. RoHS Declarations for
this product can be obtained from your GeneSiC representative.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European
Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the
foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC
Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license,
express or implied to any intellectual property rights is granted by this document.
Related Links
• Soldering Document: http://www.genesicsemi.com/quality/quality-manual/
• Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/
• Reliability Report: http://www.genesicsemi.com/quality/reliability/
