NPN TO-6G3 Icman = 20 to 60A Veeasus) = 40 to 300V f: = 0.6 to 30 MHz Case 807 Veco Ic VCE (SAT) VBE VBE (SAT) Po @ Isfb @ VCE (Sus) (MAX) hre @ INE @ Icila @ IciVcE @ Ihe IcevV @ Woe |Tc = 100C t = 1 sec ft ted @ Icfte torr @ Icfle Type No. vy) (A) (min-max @ AN) (V @ AIA) (V @ AN) (W @A/A) (mA @ V) (Watts) (A @ V) (MHz) (ut @ AIA) (ss @ AIA) 2N1936 60 20 10-50@ 10/10 75@10/1.6 1.25@10/3 10@120 150 5@30 4 BO 15/1.2 1.5'@15/1.2 2N1937 80 20 10-50@ 10/10 .75@10/1.6 1.25@10/3 10@120 150 5@30 4 SO Us1.2 1.5'@15/1.2 2N3265 90 20 25-55@ 15/2 1@20/2 1.8@20/2 20@ 150 100 35@75 20 5@ 151.2 2@15/1.2 2N3266 60 20 20-80@ 15/3 1.6@ 20/2 2.2@20/2 20@120 100 70@50 20 5G@15/1.2 2@15/1.2 2N3846 200 20 40-200@5/3 75@10/1.6 1.2@10/3 2%@300 150 7,.5@20 10 4@ 10/2 7@10/2 2N3847 300 20 40-200@5/3 75@101.6 1,2@10/3 2%@400 150 7.5@20 1o | 4@ 10/2 7@10/2 2N3848 200 20 40-200@5/4 1@15/2 1.4@15/4 29 @300 150 7.5@20 10 =| 4@ 10 7@10/2 2N3849 300 20 40-200@5/4 1@15/2 41.4@15/4 25@400 150 7.5@20 10 | 4@ 10/2 7@10/2 2n4002 80 30 20-80@ 15/4 1.2@30/4 1,8@30/4 19@90 100 8@12.5 30 1@ 15/1.5 3@151.5 2n4003 100 30 20-80@ 15/4 1.2@30/4 1.8@30/4 19@110 400 8@12.5 30 1@ |5/1.5 3@15/1.5 2N4210 60 20 20-100@ 10/6 1@ 10/1 1.6@10/6 5%@80 100 3.3'@30 10 Se5/1.2 1.5'@15/1.2 2N211 80 20 20-100@10/6 1@10/1 1.6@ 10/6 57@100 100 3.3'@30 10 SOr5/1.2 15'@15/1.2 2N5539 130 20 20-75@10/5 8@15/1.5 1.5@15/1.5 2@175 100 3.3@30 20 5@ 10/1 2@10/1 2N5733 80 30 30-300@ 10/2 1.2@20/2 15 @20/2 19@100 400 s'@25 30 76101 4@10/1 2N5968 100 30 30-120@ 10/10 B@10/1 2.5@40/4 5@100 125 5@25 10 5G 30/3 1@30/3 2N6046 60 20 20-100@20/4 2@20/1.33 2@20/1.33 5@70 114 5.2@22 30 6G 20/1.33 9@20/1.33 2N6047 100 20 20-100@20/4 2@20/1.33 2@20/1.33 5@110 114 5.2@22 30 6G 20/1.33 9@20/1 33 2N6048 140 20 20-100@20/4 2@20/1.33 2@20/1.33 5@150 114 5.2@22 30 6G 20/1.33 9@20/ 33 2N6062 100 50 20-120@20/10 | 1@20/2 2 5@60/6 58@100 150 6@25 10 | 5@ 40/4 1@40/4 2N6215 80 50 25-150@ 25/2 15@50/5 1.5@25/1.25 2@100 125 7@18 20 | 1@28/1.25 $,25@25/1.25 2N6278 100 50 30-120@20/4 4.2@20/2 1.8@20/2 01@120 143 30@8.3 30 | .35.220/2 1.05@20/2 2N6279 120 50 30-120@20/4 1.2@20/2 1.8@20/2 01@140 143 30@8.3 30 35. 3.20/2 1.05@20/2 2N6280 140 50 30-120@ 20/4 1.2@20/2 1.8@20/2 01@ 160 143 30@8.3 30 35.520/2 1,05@ 20/2 2N6281 150 50 30-120@20/4 1.2@20/2 1.8@20/2 01@180 443 30@8.3 30 35. 320/2 1.05@20/2 2N6324 200 30 40-150@5/5 1.5@20/2 2.5@30/5 29 @300 200 45@44 10 6920/2 3'@20/2 2N6325 300 30 30-150@5/5 1.5@20/2 25@30/5 2%@400 200 45@44 10 6h;20/2 3'@20/2 NOTES: b) ICBO @ VcB (mA @ V) = gh ICES @ VCE (MA @ V) tp (typical) NPN TO-114 lcmax. = 40 to IOOA Verosus) = 40 to 160V fi = O.1l to 20 MHz Case 808 Veceo {c VCE (SAT) VBE (SAT) Po@ ish @ VCE (sus) (MAX) hre @ IcAce @ Ichp @ Ice IcEV @ Vee |Tc = 100C t = 1 sec ft ON @ IAB torr @ Ich Tyne No. Ww) (A) (min-max @ AV) (V @ ANA) (v @N/A) (mA @ V) | (Watts) Aa@y (Miz) | us @ AIA) | (us @ AYA} 2N3149 80 70 >10@50/3 1.5@50/10 25@10/10 2@80 200 4 1 @50/10 20@50/10 2N3150 100 70 >10@50/3 1.5@50/10 2.5@50/10 2@100 200 d 1 @50/10 20@50/10 2N3151 150 70 >10@50/3 1.5@50/10 2,.5@50/10 2@150 200 4 1 @50/10 20@50/10 2N4865 80 90 10-40@70/5 2.5@70/7 2.5@70/7 5@100 200 10@20 10 2D70/7 2@707 2N4866 420 90 10-40@70/5 25@70/7 25@70/7 5@140 200 10@20 40 2970/7 2@707 2N4950 60 70 >10@50/3 1.5@50/10 2.5@50/10 2@60 200 dq 1@50/10 20@50/10 2N5250 400 90 10-40@70/5 2.5@70/7 2.5@70I7 5@125 200 10@20 10 2270/7 2@707 2N5251 150 90 10-40@70/5 2.5@70/7 2.5@707 5@ 180 200 10@20 10 2270/7 2@707 2N5489 100 40 15-60@40/6 1.5@40/8 2 5@40/6 29@ 125 200 5 | 2e707 2 @70/7 2N5587 120 80 10-30@80/2 2@80/8 2.5@80/8 29@ 160 200 5 | 2ezo7 2@70/7 2N5588 160 80 10-30@ 80/2 2@80/8 2,.5@80/8 25 @ 160 200 5 | 2e70r e707 2N5927 120 400 10-40@70/2 75@70/7 4.5%@70/2 2@150 200 1 2.5@50/10 5.5@50/10 NOTES:g) Ices @VCE (mA @ V) k) VBE @ ICVcE (V @ AN) 4) (typical) N a B "NEW ENGLAND SEMICONDUCTOR 6 LAKE STREET, LAWRENCE, MA 018-1 e 12