F 1235A
GaAs-Infrarot-Lumineszenzdiode (950 nm, 200 µm Kantenlänge)
GaAs Infrared Emitting Diode (950 nm, 8 mil)
Vorläufige Daten / Preliminary data
2002-02-21 1
Wesentliche Merkmale
Typ. Gesamtleistung: 10 mW @ 100 mA im
TOPLED® Gehäuse
Chipgröße 200 x 200 µm2
Wellenlänge der Strahlung 950 nm
GaAs-LED mit sehr hohem Wirkungsgrad
Gleichstrom- oder Impulsbetrieb möglich
Hohe Zuverlässigkeit
Anwendungen
Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
Industrieelektronik
Bandende Erkennung (z.B. Videorecorder)
Datenübertragung
Positionsüberwachung
Barcode-Leser
•„Messen/Steuern/Regeln
Automobiltechnik
Sensorik
Alarm- und Sicherungssysteme
IR-Freiraumübertragung
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
F 1235A Q 67220-C1274 Infrarot emittierender Chip, Oberseite Anodenanschluß,
Rückseite AuGe-Eutektikum
Infrared emitting die, top side anode connection, backside
AuGe eutecticum alloy
Features
Typ. total radiant power: 10 mW @ 100 mA in
TOPLED® package
Chip size 200 x 200 µm2
Peak wavelength of 950 nm
Very highly efficient GaAs LED
DC or pulsed operations are possible
High reliability
Applications
Miniature photointerrupters
Industrial electronics
Tape end detection (VCR e.g.)
Data transmission
Position sensing
Barcode reader
Drive and control circuits
Automotive technology
Sensor technology
Alarm and safety equipment
IR free air transmission
2002-02-21 2
F 1235A
Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C)
Electrical values (measured on TO18 header without resin, TA = 25 °C)
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 10 mA
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax,
IF = 10 mA
Spectral bandwidth at 50% of Imax
∆λ 55 nm
Sperrspannung
reverse voltage
IR = 10 µA
VR530 V
Schaltzeiten, Ie von 10% a uf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50
Switching t imes, Ie from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50
tr, tf350 ns
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tP = 100ms VF1.5 1.6 V
Gesamtstrahlfluß4)
radiant power4)
IF = 100mA, t = 20 ms
Φe36 mW
F 1235A
2002-02-21 3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Chipkantenlänge (x-Richtun g)
Length of chip edge (x-direction) Lx0.18 0.2 0.22 mm
Chipkantenlänge (y-Richtun g)
Length of chip edge (y-direction) Ly0.18 0.2 0.22 mm
Durchmesser des Wafers
Diameter of the wafer D76.2 mm
Chiphöhe
Die height H170 185 200 µm
Bondpaddurchmesser
Diameter of bondpad d120 µm
Bezeichnung
Parameter Wert
Value
Vorderseitenmetallisierung
Metallization frontside Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside AuGe-Eutektikum
AuGe eutectic alloy
Trennverfahren
Dicing Sägen
Sawing
Verbindung Chip - Träger
Die bonding Legieren
Eutectic bonding
F 1235A
2002-02-21 4
Grenzwerte3) (TA = 25 °C)
Maximum Ratings3)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum operating temperature range Top - 40...+100 °C
Maximaler Lagertemperaturbereich
Maximum storage temperatur range Tstg - 40...+100 °C
Maximaler Durchlaßstrom
Maximum forward current IF30 mA
Maximaler Stoßstrom
maximum surge current
tp = 10 µs, D = 0.005
IS0.5 A
Maximale Sperrschichttemperatur
Maximum junction temperature Tj125 °C
F 1235A
2002-02-21 5
Relative Spectral Emission2)Irel = f)
TA = 25 °C
Forward Current2)
IF= f (VF), Single pulse, tp = 20 µs, TA = 25 °C
Radiant Intensity2)
Single pulse, tP = 20 µs, TA = 25 °C
OHR01938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHF00367
F
10
-2
0
Ι
F
12340.5 1.5 2.5 V
10
-1
10
0
10
1
10
2
10
3
10
4
mA
Ιe
Ιe 100 mA = f (IF)
OHF00369
10-1 1001012
10 103
-3
10
-2
10
-1
10
100
1
10
e (100 mA)
Ι
Ι
F
e
Ι
mA
2002-02-21 6
F 1235A
Maßzeichnung
Chip Outlines
Maße werden als typische1) Wer te wie f olgt angegebe n: mm (inch) / Dimensions are specified as typical1) values as
follows: mm (inch).
GMOY6073
0.185 (0.0073)
0.12 (0.0047)
p-contact
n-contact
0.2 (0.0079)
F 1235A
2002-02-21 7
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or
detaile d sp ec if ic at ion.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substa nc es . For information on the types in question pleas e c ont ac t our s ales organizatio n.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Com pon en ts used in life- su pport devices or system s mu st be expressl y au thorized b y us for su ch p ur p o se!
Critical components5), may only be used in life-support devices or systems6) with the express written approval of
OSRAM OS.
1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a spe cified value. For final e lectrical te sting a spot check with sufficient st atistical accura cy is carr ied out.
Minimum and maximum values( refered to as min. and max.) refer to the limits of the sample measurement.
2) Based on data measured in OSRAM Opto Semiconductors TOPLED® pa c ka ge. T hey represent typical1) data.
3) Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in an OSRAM OS TO PLED® package and are only valid for this package.
4) Value is refe renc ed to the vendors measure m ent sys t em (correlati on t o cu stom er product( s) is requ ired).
5)A critical component is a component used in a life -support device or system whose fai lure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
6)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user m ay be endange red.