SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE BVcEO hee NE (v) Min.-Max. @1,Vce(V) (db) 2N3391A 5.0 . 2N3844 \ : " 10.2 2N3844A , : 8.5 2N3845 ae 10.2 2N3845A 8.5 Conditions Device Type 2N3900A 2N3901 2N5232A 2N5249A 2N5306A 2N5308A 2N5309 2N5310 2N5311 SILICON SIGNAL LOW NOISE AMPLIFIERS T0-92 PACKAGE BVcEO here NF Device Type (V) Min.-Max. @ Ico, VcE{V) (db) Conditions GES5827A GESS828A GES6000 GES6001 WWwon GES6004 GES6005 GES6010 GES6011 GES6014 WoW WwW GES6015 GES929 GES930 GES5306A GES5308A D3881-4 D38S87 D38S8-10 D38W8-10 D38W 13-14 GES6012 GES6013 GES6016 GES6017 109Silicon Transistors fon GES929.30 Electrical replacements for 2N929 and 2N930 == \ The General Electric GES929 and GES980 are NPN, silicon, planar, epitaxial, passi- vated transistors, These devices feature very high gain at extremely low collector cur- rents, low leakage currents and inherent low noise characteristics. These transistors are ideally suited for low level amplifier applications and, with leads in a TO-92 pin | ti configuration, are epoxy replacements for the 2N929 and 2N930 type devices. by dbo | db | Qe Lol Aa-o_ L j i . . oes SEATING PLANE |. EMITTER absolute maximum ratings: (25C) (untess otherwise specified) 2 BASE TO-92 3. COLLECTOR Voltages ILLIMETERS |_INCHES Collector to Emitter Voxo 50 Volts u Emitter to Base Vezo 5 Volts Collector to Base Vero 70 Volts 407| 482{o016/019| 3 Current . i 165 Collector (Steady State) Ic 100 mA 10 Dissipation Total Power (Free Air @ 25C) + Pr 360 mW Total Power (Free Air @ 55C) + Pr 250 mW Temperature Storage Tere 65 to +150C THREE LEADS Operating Ts +125C a conTOUR OF PACKAGE UNCONTROLLED OUTSIDE Lead Soldering, 1/16 + 1/32 from THIS SIDE. ease for 10 sec. max. Ty. +260C 3.(THREE LEADS) $b2 APPLIES BETWEEN Ly AND La. b APPLIES BETWEEN La AND 12.70 MM (.500) FROM THE SEATING PLANE. DIAMETER IS UN- ons : : CONTROLLED INL, AND BEYOND 12.70MM (.500") +Derate 3.6 mW/C increase in ambient temperature above 25C. FROM SEATING PLANE. SS SN A SS A A a A A oS A ON A A SS SS ST electrical characteristics: (25C) (untess otnerwise specified) Static Characteristics Min. Max. Collector Cutoff Current (Vcg = 50V) Tcso 10 nA (Ves = 50V, TA = 100C) Icso 10 HA (Ves = 50V) Iczs 10 nA Emitter Cutoff Current (Ves = 5V) Izzo 50 nA Forward Current Transfer Ratio (Vee = 5V, Ic = 10 vA) GES929 hrs 60 120 GES930 hre 100 300 (Vez = 5V, Ic = 0.5 mA) GES929 hrz 90 _ GES930 hrs 150 (Vee = 5v, Ig = 10 mA) GES929 hrs _ 350 GES930 hre 600 Collector Emitter Breakdown Voltage (Ic = 10 mA)t Ver) ceo 50 Volts Collector Base Breakdown Voltage (Ic = 10 uA) Visp cso 70 Volts Emitter Base Breakdown Voltage (Iz = 10 uA) Vise Epo 5 Volts Collector Saturation Voltage (Ic = 10 mA, Is = 1 mA) Ver (eat) 125 Volts Base Saturation Voltage (Ic = 10 mA, Is = 1 mA)tf Va (ont) -78 Volts Base Emitter Voltage (Vcx = 10V, Ic = 2 mA) Var 5 9 Volts tPulse conditions 800 usec. 2% duty cycle. 1191hye OR hee-CURRENT GAIN GES929, 30 Dynamic C haracteristies Gain Bandwidth Product) = (Ves = 10V, Ic = 2 mA, f = 10 mHz) Noise Figure (Ver = 5V, Ic = 10uA, R, = 10k, BW = 15.7 kHz) Output Capacitance, Common Base (Ves = 10V, I Vo z=0,f=1iMHz) Normalized h,. vs. | GES929 'GES930 NORMALIZED hee-Vcg = 5V 0.00I 0.01 O.! fr GES929 NF GES930 NF Cor c 1.0 T-COLLECTOR CURRENT-mA Small Signal Current Gain vs. Collector Current fg FSV Ty =+26C GES929 | hee OC =! _ av, Iv -TSMH2Z Ol I- COLLECTOR CURRENT-mA IK Voe = 5V Ta +25 GES930 Min. Max. 90 350 mHz 4 dB 3 dB 1.0 4.0 pF 10 100 +1269 +286C a hre VS Voce Iv hyp OR hpg-CURRENT GAIN 3 0.01 Te- COLLECTOR CURRENT- mA 1192Ic-COLLECTOR CURRENT-mA Ic-COLLECTOR CURRENT-mA Typical Collector Characteristics GES929 Tq2t25C .O3 Ic-COLLECTOR CURRENT- mA .02 Tge.olmA Ip*.00i Ip=OmA 40 I Vog COLLECTOR-EMITTER VOLTAGE- VOLTS Vce- COLLECTOR-EMITTER VOLTAGE~VOLTS 4.0 4.0 | I Tat +25C Taz +t00c 3.6 ot | 7 3.2+- 4 ee i ~ L7 lol | / 2 t 2s A. 009 WA 2.4 e 2.4 008 2.0 . 20b1 007 A , , S La | + WY, Be 006] VY | a it rs ] =I god TY 1.2 2 12 004 / * ear 08 004 0.8 ,003 003 | 002 ) 0.4 0.4 = = OOIMA Tp+OmA Ig*-001mA _ i LgsOmA | | i 80 90 100 0 .6v10,,~C*O~<CSCstst<CSKSS:SC~CSGSSC~SSCiPO:SCBCs=*dLCO!D Veg - COLLECTOR-EMITTER VOLTAGE - VOLTS Veg ~ COLLECTOR-EMITTER VOLTAGE ~VOLTS 1193GES929,30 | Ic-COLLECTOR CURRENT -mA Ic-COLLECTOR CURRENT-mA Typical Collector Characteristics GES930 Tg 55C O0lmA IgzOmA Veg ~COLLECTOR-EMITTER VOLTAGE ~VOLTS Tas +25C 012 10 OL IgsOmA 20 30 80 Vop- COLLECTOR-EMITTER VOLTAGE-VOLTS 90 100 1194 Ic-COLLECTOR CURRENT-mA Ic-COLLECTOR CURRENT-mA 20 Tast25C 18 Tgs.0lmA Vop -COLLECTOR-EMITTER VOLTAGE- VOLTS 5.0 T | oye AA) y Taz +100C 010 A 4.5 4 H, 4 ZL 7 40 LZ | ZZ) / yO 008 A / 3.5 La L1 7. 007 / 3.0 p><t 4 a -006 | 25 ett 005 YY / | ole LY YI 004 / ee 003 | Lop t Lf 002 lee O86 Tg? OO1mA Tg=OmA S19 + 30.4050 60 70 80 90 Vce~ COLLECTOR-EMITTER VOLTAGE-VOLTS 100