Description
Features
nPLANAR PROCESS
n200 mW POWER DISSIPATION
Mechanical Dimensions
nINDUSTRY STANDARD SOT-23
PACKAGE
nMEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
FMBB914
Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
FMBB914
Units
FMBB914
80
80
Volts
Volts
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Power Dissipation...PD
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
Maximum Forward Voltage...VF
@ IF = 100 mA
Maximum DC Reverse Current...IR @ VR = 70V
Maximum Frequency...f
Maximum Diode Capacitance...CD
Maximum Reverse Recovery Time...tRR
............................................. 100 ...............................................
............................................. 4.0 ...............................................
......................................... 200 ..........................................
......................................... -25 to 85 ..........................................
......................................... -55 to 125 ..........................................
............................................. 1.2 ...............................................
............................................. 0.1 ...............................................
............................................. 100 ...............................................
............................................. 3.5 ...............................................
............................................. 4.0 ...............................................
mAmps
Amps
mW
°C
°C
Volts
µAmps
MHz
pF
ns
Page 10-22
.110
.060
.037
.037
.115
.016
.043
.004
.016
2
1
3
Electrical Characteristics
PVV = 100ns
Device Under TDevice Under T
Device Under TDevice Under T
Device Under Testest
estest
est
50 Ohms
5K Ohms
RG = 50 Ohms
.01 uF
IF
Output
Trr
IR
0.1 IR
Pin 1
Pin 3
Pin 2 NC
2
1
3
