M45PE16-VMW6TG - Micron Technology, Inc.

Micron Serial NOR Flash Memory

3V, 16Mb, Page Erasable with Byte Alterability

M45PE16

Features

• SPI bus-compatible serial interface

• 75 MHz clock frequency (MAX)

• 2.7–3.6V single supply voltage

• 16Mb of page-erasable Flash memory

• Page size: 256 bytes

– Page write: 11ms (TYP)

– Page program: 0.8ms (TYP)

– Page erase: 10ms (TYP)

• Sector erase: 512Kb

• Hardware write protection of the bottom memory

area 64KB

• Electronic signature

– JEDEC-standard, 2-byte signature (4015h)

• Deep power-down mode: 1µA (TYP)

• WRITE cycles per sector: >100,000

• Years of data retention: >20

• Packages (RoHS-compliant)

– SO8W (MW) 208 mil

– VFQFPN8 (MP) 6;;mm x 5mm

75MHz, Serial Peripheral Interface Flash Memory

Features

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Products and specifications discussed herein are subject to change by Micron without notice.

Contents

Functional Description ..................................................................................................................................... 5

Signal Descriptions ........................................................................................................................................... 7

Configuration and Memory Map ....................................................................................................................... 8

Memory Configuration and Block Diagram .................................................................................................... 8

Memory Map – 16Mb Density ........................................................................................................................... 9

Operating Features Overview .......................................................................................................................... 10

Sharing the Overhead of Modifying Data ..................................................................................................... 10

Easy Method to Modify Data ....................................................................................................................... 10

Fast Method to Modify Data ........................................................................................................................ 10

Polling During a WRITE, PROGRAM, or ERASE Cycle ................................................................................... 11

Reset .......................................................................................................................................................... 11

Active Power, Standby Power, and Deep Power-Down .................................................................................. 11

Status Register ............................................................................................................................................ 11

Protection Modes ....................................................................................................................................... 11

Serial Peripheral Interface Modes .................................................................................................................... 13

Command Set Overview ................................................................................................................................. 15

WRITE ENABLE .............................................................................................................................................. 17

WRITE DISABLE ............................................................................................................................................. 18

READ IDENTIFICATION ................................................................................................................................. 19

READ STATUS REGISTER ................................................................................................................................ 20

WIP Bit ...................................................................................................................................................... 21

WEL Bit ...................................................................................................................................................... 21

READ DATA BYTES ......................................................................................................................................... 22

READ DATA BYTES at HIGHER SPEED ............................................................................................................ 23

PAGE WRITE .................................................................................................................................................. 24

PAGE PROGRAM ............................................................................................................................................ 25

PAGE ERASE ................................................................................................................................................... 26

SECTOR ERASE .............................................................................................................................................. 27

DEEP POWER-DOWN ..................................................................................................................................... 28

RELEASE from DEEP POWER-DOWN .............................................................................................................. 29

Power-Up and Power-Down ............................................................................................................................ 30

Maximum Ratings and Operating Conditions .................................................................................................. 32

Electrical Characteristics ................................................................................................................................ 33

AC Characteristics .......................................................................................................................................... 34

Package Information ...................................................................................................................................... 41

Device Ordering Information .......................................................................................................................... 43

Standard Parts ............................................................................................................................................ 43

Revision History ............................................................................................................................................. 44

Rev. B – 06/13 ............................................................................................................................................. 44

Rev. A – 05/13 ............................................................................................................................................. 44

75MHz, Serial Peripheral Interface Flash Memory

Features

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List of Figures

Figure 1: Logic Diagram ................................................................................................................................... 5

Figure 2: Pin Connections: MLP and SO8 ......................................................................................................... 6

Figure 3: Block Diagram .................................................................................................................................. 8

Figure 4: Bus Master and Memory Devices on the SPI Bus ............................................................................... 14

Figure 5: SPI Modes ....................................................................................................................................... 14

Figure 6: WRITE ENABLE Command Sequence .............................................................................................. 17

Figure 7: WRITE DISABLE Command Sequence ............................................................................................. 18

Figure 8: READ IDENTIFICATION Command Sequence ................................................................................. 20

Figure 9: READ STATUS REGISTER Command Sequence ................................................................................ 20

Figure 10: Status Register Format ................................................................................................................... 21

Figure 11: READ DATA BYTES Command Sequence ........................................................................................ 22

Figure 12: READ DATA BYTES at HIGHER SPEED Command Sequence ........................................................... 23

Figure 13: PAGE WRITE Command Sequence ................................................................................................. 24

Figure 14: PAGE PROGRAM Command Sequence ........................................................................................... 25

Figure 15: SECTOR ERASE Command Sequence ............................................................................................. 26

Figure 16: SECTOR ERASE Command Sequence ............................................................................................. 27

Figure 17: DEEP POWER-DOWN Command Sequence ................................................................................... 28

Figure 18: RELEASE from DEEP POWER-DOWN Command Sequence ............................................................. 29

Figure 19: Power-Up Timing .......................................................................................................................... 31

Figure 20: AC Measurement I/O Waveform ..................................................................................................... 34

Figure 21: Serial Input Timing ........................................................................................................................ 38

Figure 22: Write Protect Setup and Hold during WRSR when SRWD=1 Timing ................................................. 38

Figure 23: Hold Timing .................................................................................................................................. 39

Figure 24: Output Timing .............................................................................................................................. 39

Figure 25: Reset AC Timing During PROGRAM or ERASE Cycle ........................................................................ 39

Figure 26: VFQFPN8 (MLP8) 6mm x 5mm ...................................................................................................... 41

Figure 27: SO8W 208 mils Body Width ............................................................................................................ 42

75MHz, Serial Peripheral Interface Flash Memory

Features

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List of Tables

Table 1: Signal Names ...................................................................................................................................... 5

Table 2: Signal Descriptions ............................................................................................................................. 7

Table 3: Sectors 31:0 ........................................................................................................................................ 9

Table 4: SPI Modes ........................................................................................................................................ 13

Table 5: Command Set Codes ........................................................................................................................ 16

Table 6: READ IDENTIFICATION Data-Out Sequence ..................................................................................... 19

Table 7: Power-up Timing and VWI Threshold ................................................................................................. 31

Table 8: Absolute Maximum Ratings .............................................................................................................. 32

Table 9: Operating Conditions ....................................................................................................................... 32

Table 10: DC Current Specifications ............................................................................................................... 33

Table 11: DC Voltage Specifications ................................................................................................................ 33

Table 12: AC Measurement Conditions ........................................................................................................... 34

Table 13: Capacitance .................................................................................................................................... 34

Table 14: AC Specifications (50 MHz) ............................................................................................................. 35

Table 15: AC Specifications (75 MHz) ............................................................................................................. 36

Table 16: Reset Specifications ........................................................................................................................ 37

Table 17: Part Number Information Scheme ................................................................................................... 43

75MHz, Serial Peripheral Interface Flash Memory

Features

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Functional Description

The M45PE16 is a 16Mb (2Mb x 8) serial Flash memory device accessed by a high-

speed, SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time using the PAGE

WRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an inte-

grated PAGE ERASE cycle followed by a PAGE PROGRAM cycle.

The memory is organized as 32 sectors, each containing 256 pages. Each page is 256

bytes wide. The entire memory can be viewed as consisting of 8192 pages, or 2,097,152

bytes.

The memory can be erased one page at a time using the PAGE ERASE command or one

sector at a time using the SECTOR ERASE command.

To meet environmental requirements, Micron offers the M45PE16 in RoHS-compliant

packages, which are also lead-free.

Delivery of parts operating with a maximum clock rate of 75 MHz begins week 8 of 2008.

Figure 1: Logic Diagram

VCC

RESET#

VSS

DQ1

DQ0

Table 1: Signal Names

Signal Name Function Direction

C Serial clock Input

DQ0 Serial data input Input

DQ1 Serial data output Output

S# Chip select Input

W# Write protect Input

RESET# Reset Input

VCC Supply voltage –

VSS Ground –

75MHz, Serial Peripheral Interface Flash Memory

Functional Description

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Figure 2: Pin Connections: MLP and SO8

DQ1

DQ0

VSS

VCC

RESET#

There is an exposed central pad on the underside of the VFQFPN package that is pulled

internally to VSS and must not be connected to any other voltage or signal line on the

PCB. The Package Information section provides details about package dimensions and

how to identify pin 1.

75MHz, Serial Peripheral Interface Flash Memory

Functional Description

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Signal Descriptions

Table 2: Signal Descriptions

Signal Type Description

DQ0 Input Serial data: Transfers data serially into the device. DQ0 receives commands, address-

es, and data to be programmed. Values are latched on the rising edge of serial clock

(C).

C Input Clock: Provides timing for the serial interface. Commands, addresses, or data present

at serial data input (DQ0) is latched on the rising edge of serial clock (C). Data on DQ1

changes after the falling edge of C.

S# Input Chip select: When S# is HIGH, the device is deselected and DQ1 is High-Z. Unless an

internal READ, PROGRAM, ERASE, or WRITE cycle is in progress, the device will be in

the standby power mode (not deep power-down mode). Driving S# LOW enables the

device, placing it in the active power mode. After power-up, a falling edge on S# is

required prior to the start of any command.

RESET# Input Reset: Provides a hardware reset for the memory. When RESET# is driven HIGH, the

device is in the normal operating mode. When RESET# is driven LOW, the device en-

ters the reset mode. In reset mode, the output is High-Z. Driving RESET# LOW while an

internal operation is in progress affects the WRITE, PROGRAM, or ERASE cycle, and da-

ta may be lost.

W# Input Write protect: Places the device in hardware protected mode when connected to VSS,

causing the first 256 pages of memory to become read-only, protected from WRITE,

PROGRAM, and ERASE operations. When W# is connected to VCC, the first 256 pages

of memory behave like the other pages.

DQ1 Output Serial data: Transfers data serially out of the device. Data is shifted out on the falling

edge of the serial clock (C).

VCC Supply Supply voltage: 2.7–3.6V

VSS Supply Ground: Reference for VCC.

75MHz, Serial Peripheral Interface Flash Memory

Signal Descriptions

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Configuration and Memory Map

Memory Configuration and Block Diagram

The device is delivered with the memory array erased; all bits are set to 1 (FFh). All usa-

ble status register bits are 0. Each page of memory can be individually programmed;

bits are programmed from 1 to 0 and when written to are changed to either 0 or 1. The

device is sector- and page-erasable; bits are erased from 0 to 1. The memory is config-

ured as follows:

• 2,097,152 bytes (8 bits each)

• 32 sectors (512Kb, 65KB each)

• 8,192 pages (256 bytes each)

Figure 3: Block Diagram

RESET#

W# Control Logic

High Voltage

Generator

I/O Shift Register

Address Register

and Counter

256 Byte

Data Buffer

256 bytes (page size)

X Decoder

Y Decoder

DQ0

DQ1

Status

000000h

010000h

1FFFFFh

0000FFh

(Note 1)

Note: 1. The first 256 pages can be read-only.

75MHz, Serial Peripheral Interface Flash Memory

Configuration and Memory Map

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Memory Map – 16Mb Density

Table 3: Sectors 31:0

Sector

Address Range

Start End

31 001F 0000 001F FFFF

30 001E 0000 001E FFFF

29 001D 0000 001D FFFF

28 001C 0000 001C FFFF

27 001B 0000 001B FFFF

26 001A 0000 001A FFFF

25 0019 0000 0019 FFFF

24 0018 0000 0018 FFFF

23 0017 0000 0017 FFFF

22 0016 0000 0016 FFFF

21 0015 0000 0015 FFFF

20 0014 0000 0014 FFFF

19 0013 0000 0013 FFFF

18 0012 0000 0012 FFFF

17 0011 0000 0011 FFFF

16 0010 0000 0010 FFFF

15 000F 0000 000F FFFF

14 000E 0000 000E FFFF

13 000D 0000 000D FFFF

12 000C 0000 000C FFFF

11 000B 0000 000B FFFF

10 000A 0000 000A FFFF

9 0009 0000 0009 FFFF

8 0008 0000 0008 FFFF

7 0007 0000 0007 FFFF

6 0006 0000 0006 FFFF

5 0005 0000 0005 FFFF

4 0004 0000 0004 FFFF

3 0003 0000 0003 FFFF

2 0002 0000 0002 FFFF

1 0001 0000 0001 FFFF

0 0000 0000 0000 FFFF

75MHz, Serial Peripheral Interface Flash Memory

Memory Map – 16Mb Density

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Operating Features Overview

Sharing the Overhead of Modifying Data

To write or program 1 or more data bytes, two commands are required: WRITE ENABLE

which is 1 byte, and a PAGE WRITE or PAGE PROGRAM command sequence, which

consists of 4 bytes plus data. This is followed by the internal cycle of duration tPW or tPP.

To share this overhead, the PAGE WRITE or PAGE PROGRAM command allows up to 256

bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1)

at a time, provided that they lie in consecutive addresses on the same page of memory.

Easy Method to Modify Data

The PAGE WRITE command provides a convenient way of modifying data (up to 256

contiguous bytes at a time) and requires the start address and the new data in the in-

struction sequence.

The PAGE WRITE command is entered by driving chip select (S#) LOW, and then trans-

mitting the instruction byte, 3 address bytes A[23:0] and at least 1 data byte, and then

driving S# HIGH. While S# is being held LOW, the data bytes are written to the data buf-

fer, starting at the address given in the third address byte A[7:0]. When S# is driven

HIGH, the WRITE cycle starts. The remaining unchanged bytes of the data buffer are

automatically loaded with the values of the corresponding bytes of the addressed mem-

ory page. The addressed memory page is then automatically put into an ERASE cycle.

Finally, the addressed memory page is programmed with the contents of the data buf-

fer.

All of this buffer management is handled internally, and is transparent to the user. The

user may alter the contents of the memory on a byte-by-byte basis. For optimized tim-

ings, it is recommended to use the PAGE WRITE command to write all consecutive tar-

geted bytes in a single sequence versus using several PAGE WRITE sequences with each

containing only a few bytes.

Fast Method to Modify Data

The PAGE PROGRAM command provides a fast way of modifying data (up to 256 con-

tiguous bytes at a time), provided that it only involves resetting bits to 0 that had previ-

ously been set to 1.

This might be:

• When the designer is programming the device for the first time.

• When the designer knows that the page has already been erased by an earlier PAGE

ERASE or SECTOR ERASE command. This is useful, for example, when storing a fast

stream of data, having first performed the erase cycle when time was available.

• When the designer knows that the only changes involve resetting bits to 0 that are still

set to 1. When this method is possible, it has the additional advantage of minimizing

the number of unnecessary ERASE operations and the extra stress incurred by each

page.

For optimized timings, it is recommended to use the PAGE PROGRAM command to

program all consecutive targeted bytes in a single sequence versus using several PAGE

PROGRAM sequences with each containing only a few bytes.

75MHz, Serial Peripheral Interface Flash Memory

Operating Features Overview

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Polling During a WRITE, PROGRAM, or ERASE Cycle

The following commands can be completed faster by not waiting for the worst-case de-

lay (tW, tPP, tPE, tBE, or tSE).

The write in progress (WIP) bit is provided in the status register so that the application

program can monitor this bit in the status register, polling it to establish when the pre-

vious WRITE, PROGRAM, or ERASE cycle is complete.

Reset

An internal power-on reset circuit helps protect against inadvertent data writes. Addi-

tional protection is provided by driving RESET# LOW during the power-on process, and

driving it HIGH only when VCC has reached the correct voltage level, VCC,min.

Active Power, Standby Power, and Deep Power-Down

When chip select (S#) is LOW, the device is selected and in the active power mode.

When S# is HIGH, the device is deselected, but could remain in the active power mode

until all internal cycles have completed (PROGRAM, ERASE, WRITE). The device then

goes in to the standby power mode, and power consumption drops to ICC1.

The deep power-down mode is entered when the DEEP POWER-DOWN command is

executed. The device power consumption drops further to ICC2. The device remains in

this mode until the RELEASE FROM DEEP POWER-DOWN command is executed. While

in the deep power-down mode, the device ignores all WRITE, PROGRAM, and ERASE

commands. This provides an extra software protection mechanism when the device is

not in active use, by protecting the device from inadvertent WRITE, PROGRAM, or

ERASE operations. For further information, see the DEEP POWER-DOWN section.

Status Register

The status register contains a number of status bits that can be read by the READ STA-

TUS REGISTER (RDSR) command. For a detailed description of the status register bits,

see the READ STATUS REGISTER section.

Protection Modes

Nonvolatile memory is used in environments that can include excessive noise. The fol-

lowing capabilities help protect data in these noisy environments.

Power-on reset and an internal timer (tPUW) can provide protection against inadver-

tent changes while the power supply is outside the operating specification.

WRITE, PROGRAM, and ERASE commands are checked before they are accepted for ex-

ecution to ensure they consist of a number of clock pulses that is a multiple of eight.

All commands that modify data must be preceded by a WRITE ENABLE command to set

the write enable latch (WEL) bit. This bit is returned to its reset state by the following

events.

• Power-up

• Reset (RESET#) driven LOW

• WRITE DISABLE command completion

• PAGE WRITE command completion

• PAGE PROGRAM command completion

75MHz, Serial Peripheral Interface Flash Memory

Operating Features Overview

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• PAGE ERASE command completion

• SECTOR EASE command completion

The hardware-protected mode is entered when W# is driven LOW, causing the first 256

pages of memory to become read-only. When W# is driven HIGH, the first 256 pages of

memory behave like the other pages of memory. The RESET# signal can be driven LOW

to freeze and reset the internal logic.

In addition to the low power-consumption feature, deep power-down mode offers extra

software protection from inadvertent WRITE, PROGRAM, and ERASE commands while

the device is not in active use.

75MHz, Serial Peripheral Interface Flash Memory

Operating Features Overview

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Serial Peripheral Interface Modes

The device can be driven by a microcontroller while its serial peripheral interface is in

either of the two modes shown in the following table. The difference between the two

modes is the clock polarity when the bus master is in standby mode and not transfer-

ring data. Input data is latched in on the rising edge of the clock, and output data is

available from the falling edge of the clock.

Table 4: SPI Modes

Note 1 applies to the entire table

SPI Modes Clock Polarity

CPOL = 0, CPHA = 0 C remains at 0 for (CPOL = 0, CPHA = 0)

CPOL = 1, CPHA = 1 C remains at 1 for (CPOL = 1, CPHA = 1)

Note: 1. The listed SPI modes are supported in extended, dual, and quad SPI protocols.

The following figures show an example of three memory devices in extended SPI proto-

col in a simple connection to an MCU on a SPI bus. Because only one device is selected

at a time, that one device drives DQ1, while the other devices are High-Z.

Resistors ensure that the device is not selected if the bus master leaves chip select (S#)

High-Z. The bus master might enter a state in which all input/output is High-Z simulta-

neously, such as when the bus master is reset. Therefore, the serial clock must be con-

nected to an external pull-down resistor so that S# is pulled HIGH while the serial clock

is pulled LOW. This ensures that S# and the serial clock are not HIGH simultaneously

and that tSHCH is met. The typical resistor value of 100kΩ, assuming that the time con-

stant R × Cp (Cp = parasitic capacitance of the bus line), is shorter than the time the bus

master leaves the SPI bus in High-Z.

Example: Cp = 50 pF, that is R × Cp = 5μs. The application must ensure that the bus

master never leaves the SPI bus High-Z for a time period shorter than 5μs. W# and

HOLD# should be driven either HIGH or LOW, as appropriate.

75MHz, Serial Peripheral Interface Flash Memory

Serial Peripheral Interface Modes

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Figure 4: Bus Master and Memory Devices on the SPI Bus

SPI bus master

SPI memory

device

SDO

SDI

SCK

DQ1 DQ0

SPI memory

device

DQ1 DQ0

SPI memory

device

DQ1 DQ0

CS3 CS2 CS1

SPI interface with

(CPOL, CPHA) =

(0, 0) or (1, 1)

W# RESET# RESET# W# RESET#

R R R

VCC VCC

VSS VSS

VSS

VCC

VSS

Figure 5: SPI Modes

DQ0

DQ1

CPHA

CPOL

MSB

75MHz, Serial Peripheral Interface Flash Memory

Serial Peripheral Interface Modes

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Command Set Overview

All commands, addresses, and data are shifted in and out of the device, most significant

bit first.

Serial data inputs DQ0 and DQ1 are sampled on the first rising edge of serial clock (C)

after chip select (S#) is driven LOW. Then, the 1-byte command code must be shifted

into the device, most significant bit first, on DQ0 and DQ1, with each bit latched on the

rising edges of C.

Every command sequence starts with a 1-byte command code. Depending on the com-

mand, this command code might be followed by address or data bytes, by address and

data bytes, or by neither address nor data bytes. For the following commands, the shif-

ted-in command sequence is followed by a data-out sequence. S# can be driven HIGH

after any bit of the data-out sequence is being shifted out.

• READ DATA BYTES (READ)

• READ DATA BYTES at HIGHER SPEED

• READ STATUS REGISTER

For the following commands, S# must be driven HIGH exactly at a byte boundary. That

is, after an exact multiple of eight clock pulses following S# being driven LOW, S# must

be driven HIGH. Otherwise, the command is rejected and not executed.

• PAGE WRITE

• PAGE PROGRAM

• PAGE ERASE

• SECTOR ERASE

• WRITE ENABLE

• WRITE DISABLE

• DEEP POWER-DOWN

• RELEASE FROM DEEP POWER-DOWN

All attempts to access the memory array are ignored during a WRITE STATUS REGIS-

TER, PROGRAM, or ERASE command cycle. In addition, the internal cycle for each of

these commands continues unaffected.

75MHz, Serial Peripheral Interface Flash Memory

Command Set Overview

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Table 5: Command Set Codes

Command Name

1-Byte

Command Code

Bytes

Address Dummy Data

WRITE ENABLE 0000

0110

06h 0 0 0

WRITE DISABLE 0000

0100

04h 0 0 0

READ IDENTIFICATION 1001

1111

9Fh 0 0 1 to 20

READ STATUS REGISTER 0000

0101

05h 0 0 1 to ∞

READ DATA BYTES 0000

0011

03h 3 0 1 to ∞

READ DATA BYTES at HIGHER SPEED 0000

1011

0Bh 3 1 1 to ∞

PAGE WRITE 0000

1010

0Ah 3 0 1 to 256

PAGE PROGRAM 0000

0010

02h 3 0 1 to 256

PAGE ERASE 1101

1011

DBh 3 0 0

SECTOR ERASE 1101

1000

D8h 3 0 0

DEEP POWER-DOWN 1011

1001

B9h 0 0 0

RELEASE from DEEP POWER-DOWN 1010

1011

ABh 0 0 0

75MHz, Serial Peripheral Interface Flash Memory

Command Set Overview

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WRITE ENABLE

The WRITE ENABLE command sets the write enable latch (WEL) bit.

The WEL bit must be set before execution of every PAGE WRITE, PAGE PROGRAM,

PAGE ERASE, and SECTOR ERASE command.

The WRITE ENABLE command is entered by driving chip select (S#) LOW, sending the

command code, and then driving S# HIGH.

Figure 6: WRITE ENABLE Command Sequence

Don’t Care

DQ[0]

01 2 4 53 76

High-Z

DQ1

MSB

LSB

0 0 0 0 0 011

Command bits

75MHz, Serial Peripheral Interface Flash Memory

WRITE ENABLE

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WRITE DISABLE

The WRITE DISABLE command resets the write enable latch (WEL) bit.

The WRITE DISABLE command is entered by driving chip select (S#) LOW, sending the

command code, and then driving S# HIGH.

The WEL bit is reset under the following conditions:

• Power-up

• Completion of WRITE DISABLE operation

• Completion of PAGE WRITE operation

• Completion of PAGE PROGRAM operation

• Completion of PAGE ERASE operation

• Completion of SECTOR ERASE operation

Figure 7: WRITE DISABLE Command Sequence

Don’t Care

DQ[0]

01 2 4 53 76

High-Z

DQ1

MSB

LSB

0 0 0 0 0 001

Command bits

75MHz, Serial Peripheral Interface Flash Memory

WRITE DISABLE

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READ IDENTIFICATION

The READ IDENTIFICATION command reads the following device identification data:

• Manufacturer identification (1 byte): This is assigned by JEDEC.

• Device identification (2 bytes): This is assigned by device manufacturer; the first byte

indicates memory type, and the second byte indicates device memory capacity.

• A unique ID code (UID) (17 bytes, 16 available upon customer request): The first byte

contains the length of the data to follow; the remaining 16 bytes contain optional cus-

tomized factory data (CFD) content.

Table 6: READ IDENTIFICATION Data-Out Sequence

Manufacturer

Identification

Device Identification UID

Memory Type Memory Capacity CFD Length CFD Content

20h 40h 15h 10h 16 bytes

Note: 1. The CFD bytes are read-only and can be programmed with customer data upon demand.

If customers do not make requests, the devices are shipped with all the CFD bytes pro-

grammed to 0.

A READ IDENTIFICATION command is not decoded while an ERASE or PROGRAM cy-

cle is in progress and has no effect on a cycle in progress.

The device is first selected by driving chip select (S#) LOW. Then, the 8-bit command

code is shifted in, and content is shifted out on serial data output (DQ1) as follows: the

24-bit device identification stored in memory, then the 8-bit CFD length, followed by 16

bytes of CFD content. Each bit is shifted out during the falling edge of the serial clock

(C).

The READ IDENTIFICATION command is terminated by driving S# HIGH at any time

during data output. When S# is driven HIGH, the device is put in the standby power

mode and waits to be selected so that it can receive, decode, and execute commands.

75MHz, Serial Peripheral Interface Flash Memory

READ IDENTIFICATION

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Figure 8: READ IDENTIFICATION Command Sequence

UIDDevice

identification

Manufacturer

identification

High-Z

DQ1

MSB MSB

DOUT DOUT DOUT DOUT

LSB

7 8 15 16 32

MSB

DQ0

LSB

Command

MSB

DOUT DOUT

LSB

Don’t Care

READ STATUS REGISTER

The READ STATUS REGISTER command allows the status register to be read. The status

ded to check the write in progress (WIP) bit before sending a new command to the de-

vice. It is also possible to read the status register continuously.

Figure 9: READ STATUS REGISTER Command Sequence

High-Z

DQ1

7 8 9 10 11 12 13 14 15

MSB

DQ0

LSB

Command

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Don’t Care

75MHz, Serial Peripheral Interface Flash Memory

READ STATUS REGISTER

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Figure 10: Status Register Format

000 WEL WIP

Write enable latch bit

Write in progress bit

00 0

WIP Bit

The write in progress (WIP) bit is a volatile read-only bit that indicates whether the

memory is busy with a WRITE, a PROGRAM, or ERASE cycle. When the WIP bit is set to

1, a cycle is in progress; when the WIP bit is set to 0, a cycle is not in progress. WIP is set

and reset automatically by the internal logic of the device.

WEL Bit

The write enable latch (WEL) bit is a volatile read-only bit that indicates the status of

the internal write enable latch. When the WEL bit is set to 1, the internal write enable

latch is set; when the WEL bit is set to 0, the internal write enable latch is reset and no

WRITE , PROGRAM, or ERASE command is accepted. The WEL bit is set and reset by

specific commands.

75MHz, Serial Peripheral Interface Flash Memory

READ STATUS REGISTER

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READ DATA BYTES

The device is first selected by driving chip select (S#) LOW. The command code for

READ DATA BYTES is followed by a 3-byte address A[23:0], with each bit latched in dur-

ing the rising edge of the serial clock (C). The memory contents at that address are then

shifted out on a serial data output (DQ1), with each bit shifted out at a maximum fre-

quency fR during the falling edge of C.

The first byte addressed can be at any location. The address is automatically incremen-

ted to the next-higher address after each byte of data is shifted out. Therefore, the entire

memory can be read with a single READ DATA BYTES command. When the highest ad-

dress is reached, the address counter rolls over to 000000h, allowing the read sequence

to be continued indefinitely.

The READ DATA BYTES command is terminated by driving S# HIGH. S# can be driven

HIGH at any time during data output. Any READ DATA BYTES command issued while

an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on

the cycle that is in progress.

Figure 11: READ DATA BYTES Command Sequence

Don’t Care

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

7 8 Cx

High-Z

DQ1

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Notes: 1. Cx= 7 + (A[MAX] + 1).

2. Address bits A[23:21] are "Don't Care" in the M25PE16.

75MHz, Serial Peripheral Interface Flash Memory

READ DATA BYTES

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READ DATA BYTES at HIGHER SPEED

The device is first selected by driving chip select (S#) LOW. The command code for the

READ DATA BYTES at HIGHER SPEED command is followed by a 3-byte address A[23:0]

and a dummy byte, with each bit latched in during the rising edge of the serial clock (C).

The memory contents at that address are then shifted out on a serial data output (DQ1)

at a maximum frequency fC, during the falling edge of C.

The first byte addressed can be at any location. The address is automatically incremen-

ted to the next-higher address after each byte of data is shifted out. Therefore, the entire

memory can be read with a single READ DATA BYTES at HIGHER SPEED command.

When the highest address is reached, the address counter rolls over to 000000h, allow-

ing the read sequence to be continued indefinitely.

The READ DATA BYTES at HIGHER SPEED command is terminated by driving S# HIGH.

S# can be driven HIGH at any time during data output. Any READ DATA BYTES at

HIGHER SPEED command issued while an ERASE, PROGRAM, or WRITE cycle is in

progress is rejected without any effect on the cycle that is in progress.

Figure 12: READ DATA BYTES at HIGHER SPEED Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Dummy cycles

DQ1 High-Z

Don’t Care

Notes: 1. Cx= 7 + (A[MAX] + 1).

2. Address bits A[23:21] are "Don't Care" in the M25PE16.

75MHz, Serial Peripheral Interface Flash Memory

READ DATA BYTES at HIGHER SPEED

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PAGE WRITE

The PAGE WRITE command allows bytes in the memory to be programmed. Before a

PAGE WRITE command can be accepted, a WRITE ENABLE command must be execu-

ted. After the WRITE ENABLE command has been decoded, the device sets the write en-

able latch (WEL) bit.

The PAGE WRITE command is entered by driving chip select (S#) LOW, followed by the

command code, 3 address bytes, and at least 1 data byte on a serial data input (DQ0).

The reset of the page remains unchanged if no power failure occurs during this WRITE

cycle. The PAGE WRITE command performs a PAGE ERASE cycle even if only 1 byte is

updated.

If the eight least-significant address bits A[7:0] are not all 0, all transmitted data that

goes beyond the end of the current page is programmed from the start address of the

same page; that is, from the address whose eight least-significant bits A[7:0] are all 0. S#

must be driven LOW for the entire duration of the sequence.

If more than 256 bytes are sent to the device, previously latched data is discarded, and

the last 256 data bytes are guaranteed to be programmed correctly within the same

page. If fewer than 256 data bytes are sent to device, they are correctly programmed at

the requested addresses without any effect on the other bytes of the same page.

For optimized timings, it is recommended to use the PAGE WRITE command to pro-

gram all consecutive targeted bytes in a single sequence rather than to use several PAGE

WRITE command sequences, each containing only a few bytes.

S# must be driven HIGH after the eighth bit of the last data byte has been latched in;

otherwise, the PAGE WRITE command is not executed.

As soon as S# is driven HIGH, the self-timed PAGE WRITE cycle is initiated. While the

PAGE WRITE cycle is in progress, the status register may be read to check the value of

the write in progress (WIP) bit. The WIP bit is 1 during the self-timed PAGE WRITE cycle

and 0 when the cycle is completed. At some unspecified time before the cycle is com-

pleted, the write enable latch (WEL) bit is reset.

A PAGE WRITE command is not executed if it applies to a page that is hardware-protec-

ted. Any PAGE WRITE command while an ERASE, PROGRAM, or WRITE cycle is in pro-

gress is rejected without having any effect on the cycle that is in progress.

Figure 13: PAGE WRITE Command Sequence

7 8 Cx

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

DIN DIN DIN DIN

Notes: 1. Cx= 7 + (A[MAX] + 1).

2. Address bits A[23:21] are "Don't Care" in the M25PE16.

3. 1 <n<256.

75MHz, Serial Peripheral Interface Flash Memory

PAGE WRITE

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PAGE PROGRAM

The PAGE PROGRAM command allows bytes in the memory to be programmed, which

means the bits are changed from 1 to 0. Before a PAGE PROGRAM command can be ac-

cepted, a WRITE ENABLE command must be executed. After the WRITE ENABLE com-

mand has been decoded, the device sets the write enable latch (WEL) bit.

The PAGE PROGRAM command is entered by driving chip select (S#) LOW, followed by

the command code, 3 address bytes, and at least 1 data byte on a serial data input

(DQ0).

If the eight least-significant address bits A[7:0] are not all 0, all transmitted data that

goes beyond the end of the current page is programmed from the start address of the

same page, that is, from the address whose eight least-significant bits A[7:0] are all 0. S#

must be driven LOW for the entire duration of the sequence.

If more than 256 bytes are sent to the device, previously latched data is discarded, and

the last 256 data bytes are guaranteed to be programmed correctly within the same

page. If fewer than 256 data bytes are sent to device, they are correctly programmed at

the requested addresses without any effect on the other bytes of the same page.

For optimized timings, it is recommended to use the PAGE PROGRAM command to

program all consecutive targeted bytes in a single sequence rather than to use several

PAGE PROGRAM sequences, each containing only a few bytes.

S# must be driven HIGH after the eighth bit of the last data byte has been latched in;

otherwise, the PAGE PROGRAM command is not executed.

As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cy-

cles's duration is tPP. While the PAGE PROGRAM cycle is in progress, the status register

may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during

the self-timed PAGE PROGRAM cycle and 0 when the cycle is completed. At some un-

specified time before the cycle is completed, the write enable latch (WEL) bit is reset.

A PAGE PROGRAM command is not executed if it applies to a page protected by all the

block-protect bits.

Figure 14: PAGE PROGRAM Command Sequence

7 8 Cx

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

DIN DIN DIN DIN

Notes: 1. Cx = 7 + (A[MAX] + 1).

2. Address bits A[23:21] are "Don't Care" in the M25PE16.

75MHz, Serial Peripheral Interface Flash Memory

PAGE PROGRAM

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PAGE ERASE

The PAGE ERASE command sets all bits inside the chosen sector to 1 (FFh). Before the

PAGE ERASE command can be accepted, a WRITE ENABLE command must have been

executed previously. After the WRITE ENABLE command has been decoded, the device

sets the write enable latch (WEL) bit.

The PAGE ERASE command is entered by driving chip select (S#) LOW, followed by the

command code and 3 address bytes on a serial data input (DQ0). Any address inside the

sector is a valid address for the PAGE ERASE command. S# must be driven LOW for the

entire duration of the sequence.

S# must be driven HIGH after the eighth bit of the last address byte has been latched in;

otherwise, the PAGE ERASE command is not executed. As soon as S# is driven HIGH,

the self-timed PAGE ERASE cycle is initiated; the cycle's duration is tPE. While the PAGE

ERASE cycle is in progress, the status register may be read to check the value of the write

in progress (WIP) bit. The WIP bit is 1 during the self-timed PAGE ERASE cycle and 0

when the cycle is completed. At some unspecified time before the cycle is completed,

the WEL bit is reset.

A PAGE ERASE command is not executed if it applies to a page that is protected by the

block-protect bits BP1 and BP0.

A PAGE ERASE command issued while an ERASE, PROGRAM, or WRITE cycle is in pro-

gress is rejected without having any effect on the cycle that is in progress.

Figure 15: SECTOR ERASE Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

Notes: 1. Cx= 7 + (A[MAX] + 1).

2. Address bits A[23:21] are "Don't Care" in the M25PE16.

75MHz, Serial Peripheral Interface Flash Memory

PAGE ERASE

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SECTOR ERASE

The SECTOR ERASE command sets all bits inside the chosen sector to 1 (FFh). Before

the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have

been executed previously. After the WRITE ENABLE command has been decoded, the

device sets the write enable latch (WEL) bit.

The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by

the command code and 3 address bytes on a serial data input (DQ0). Any address inside

the sector is a valid address for the SECTOR ERASE command. S# must be driven LOW

for the entire duration of the sequence.

S# must be driven HIGH after the eighth bit of the last address byte has been latched in;

otherwise, the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,

the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is tSE. While the

SECTOR ERASE cycle is in progress, the status register may be read to check the value of

the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE

cycle and 0 when the cycle is completed. At some unspecified time before the cycle is

completed, the WEL bit is reset.

A SECTOR ERASE command applied to a sector that contains a page that is hardware

protected is not executed.

Any SECTOR ERASE command issued while an ERASE, PROGRAM, or WRITE cycle is in

progress is rejected without having any effects on the cycle that is in progress.

Figure 16: SECTOR ERASE Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

Notes: 1. Cx= 7 + (A[MAX] + 1).

2. Address bits A[23:21] are "Don't Care" in the M25PE16.

75MHz, Serial Peripheral Interface Flash Memory

SECTOR ERASE

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DEEP POWER-DOWN

Executing the DEEP POWER-DOWN command is the only way to put the device in the

lowest power-consumption mode, the deep power-down mode. The DEEP POWER-

DOWN command can also be used as a software-protection mechanism while the de-

vice is not in active use because in the deep power-down mode the device ignores all

WRITE, PROGRAM, and ERASE commands.

Driving chip select (S#) HIGH deselects the device and puts it in standby power mode if

there is no internal cycle currently in progress. After entering standby power mode, the

deep power-down mode can be entered by executing the DEEP POWER-DOWN com-

mand, subsequently reducing the standby current from ICC1 to ICC2.

To take the device out of deep power-down mode, the RELEASE from DEEP POWER-

DOWN command must be issued. Other commands must not be issued while the de-

vice is in deep power-down mode. The deep power-down mode stops automatically at

power-down. The device always powers up in standby power mode.

The DEEP POWER-DOWN command is entered by driving S# LOW, followed by the

command code on a serial data input (DQ0). S# must be driven LOW for the entire du-

ration of the sequence.

S# must be driven HIGH after the eighth bit of the command code has been latched in;

otherwise, the DEEP POWER-DOWN command is not executed. As soon as S# is driven

HIGH, a delay of tDP is required before the supply current is reduced to ICC2, and deep

power-down mode is entered.

Any DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cy-

cle is in progress is rejected without any effect on the cycle that is in progress.

Figure 17: DEEP POWER-DOWN Command Sequence

MSB

DQ0

LSB tDP

Command

Don’t Care

Deep Power-Down ModeStandby Mode

75MHz, Serial Peripheral Interface Flash Memory

DEEP POWER-DOWN

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RELEASE from DEEP POWER-DOWN

After the device has entered deep power-down mode, all commands are ignored except

RELEASE from DEEP POWER-DOWN. Executing this command takes the device out of

deep power-down mode.

The RELEASE from DEEP POWER-DOWN command is entered by driving chip select

(S#) LOW, followed by the command code on a serial data input (DQ0). S# must be driv-

en LOW for the entire duration of the sequence.

The RELEASE from DEEP POWER-DOWN command is terminated by driving S# HIGH.

Sending additional clock cycles on the serial clock (C) while S# is driven LOW causes the

command to be rejected and not executed.

After S# has been driven HIGH, followed by a delay, tRDP, the device is put in the stand-

by mode. S# must remain HIGH at least until this period is over. The device waits to be

selected so that it can receive, decode, and execute commands.

Any RELEASE from DEEP POWER-DOWN command issued while an ERASE, PRO-

GRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in

progress.

Figure 18: RELEASE from DEEP POWER-DOWN Command Sequence

High-Z

DQ1

MSB

DQ0

LSB tRDP

Command

Don’t Care

Deep Power-Down Mode Standby Mode

75MHz, Serial Peripheral Interface Flash Memory

RELEASE from DEEP POWER-DOWN

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Power-Up and Power-Down

At power-up and power-down, the device must not be selected; that is, S# must follow

the voltage applied on VCC,min until VCC reaches the correct value: VCC,min at power-up,

and then for a further delay of tVSL; VSS at power-down. A safe configuration is provided

in the Serial Peripheral Interface Modes section.

To avoid data corruption and inadvertent WRITE operations during power-up, a power-

on-reset (POR) circuit is included. The logic inside the device is held at reset while VCC

is less than the POR threshold voltage, VWI ; all operations are disabled, and the device

does not respond to any command. In addition, the device ignores the following com-

mands until a time delay of tPUW has elapsed after the moment that VCC rises above the

VWI threshold:

• WRITE ENABLE

• PAGE WRITE

• PAGE PROGRAM

• PAGE ERASE

• SECTOR ERASE

Correct operation of the device is not guaranteed if, by this time, VCC is still below

VCC,min. No WRITE, PROGRAM, or ERASE command should be sent until:

•tPUW after VCC has passed the VWI threshold

•tVSL after VCC has passed the VCC,min level

If the time, tVSL, has elapsed, after VCC rises above VCC,min, the device can be selected

for READ commands even if the tPUW delay has not yet fully elapsed.

As an extra precaution, the RESET# signal could be driven LOW for the entire duration

of the power-up and power-down phases.

75MHz, Serial Peripheral Interface Flash Memory

Power-Up and Power-Down

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Figure 19: Power-Up Timing

VCC

VCC,min

VWI

RESET state

of the

device

Chip selection not allowed

PROGRAM, ERASE, and WRITE commands are rejected by the device

tVSL

tPUW

Time

READ access allowed Device fully

accessible

VCC,max

Table 7: Power-up Timing and VWI Threshold

Symbol Parameter Min Max Unit

tVSL VCC,min to S# LOW 30 – µs

tPUW Time delay before the first WRITE, PROGRAM, or ERASE

command

1 10 ms

VWI Write-inhibit voltage 1.5 2.5 V

Note: 1. These parameters are characterized only, over the temperature range -40°C to +85°C.

After power-up, the device is in the following state:

• Standby power mode (not the deep power-down mode).

• Write enable latch (WEL) bit is reset.

• Write in progress (WIP) bit is reset.

Normal precautions must be taken for supply-line decoupling to stabilize the VCC sup-

ply. Each device in a system should have the VCC line decoupled by a suitable capacitor

close to the package pins; generally, this capacitor is of the order of 100nF.

At power-down, when VCC drops from the operating voltage to below the POR threshold

voltage VWI, all operations are disabled, and the device does not respond to any com-

mand.

Note: Designers need to be aware that if power-down occurs while a WRITE, PRO-

GRAM, or ERASE cycle is in progress, some data corruption may result.

75MHz, Serial Peripheral Interface Flash Memory

Power-Up and Power-Down

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Maximum Ratings and Operating Conditions

Stressing the device above the rating listed in the Absolute Maximum Ratings table may

cause permanent damage to the device. These are stress ratings only, and operation of

the device at these or any other conditions beyond those indicated in the Operating

sections of this specification is not implied. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Table 8: Absolute Maximum Ratings

Symbol Parameter Min. Max. Unit Notes

TSTG Storage temperature –65 150 °C

TLEAD Lead temperature during soldering See note °C 1

VIO Input and output voltage (with respect to

ground)

–0.6 VCC + 0.6 V

VCC Supply voltage –0.6 4.0 V

VESD Electrostatic discharge voltage (human body

model)

–2000 2000 V 2

Notes: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly) and the Eu-

ropean directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU

2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)

Table 9: Operating Conditions

Symbol Parameter Min. Max. Unit

VCC Supply voltage 2.7 3.6 V

TAAmbient operating temperature –40 85 °C

75MHz, Serial Peripheral Interface Flash Memory

Maximum Ratings and Operating Conditions

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Electrical Characteristics

Table 10: DC Current Specifications

Parameter Symbol Test Conditions Min Max Units

Input leakage current ILI – – ±2 µA

Output leakage current ILO – – ±2 µA

Standby current (standby and

reset modes)

ICC1 S# = VCC, VIN = VSS or VCC – 50 µA

Deep power-down current ICC2 S# = VCC, VIN = VSS or VCC – 10 µA

Operating current (READ) ICC3 C = 0.1 × VCC / 0.9 × VCC at 75 MHz,

DQ1 = open

– 12 mA

C = 0.1 × VCC / 0.9 × VCC at 33 MHz,

DQ1 = open

– 4 mA

Operating current (PAGE

PROGRAM)

ICC4 S# = VCC – 15 mA

Operating current (SECTOR

ERASE)

ICC5 S# = VCC – 15 mA

Table 11: DC Voltage Specifications

Parameter Symbol Test Conditions Min Max Units

Input LOW voltage VIL – –0.5 0.3 × VCC V

Input HIGH voltage VIH – 0.7 × VCC VCC + 0.4 V

Output LOW voltage VOL IOL = 1.6mA – 0.4 V

Output HIGH voltage VOH IOH = –100µA VCC - 0.2 – V

75MHz, Serial Peripheral Interface Flash Memory

Electrical Characteristics

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AC Characteristics

In the following AC specifications, output High-Z is defined as the point where Data Out

is no longer driven.

Table 12: AC Measurement Conditions

Parameter Symbol Min Max Unit

Load capacitance CL30 30 pF

Input rise and fall times – – 5 ns

Input pulse voltages – 0.2 × VCC 0.8 × VCC V

Input timing reference voltages – 0.3 × VCC 0.7 × VCC V

Output timing reference voltages – 0.3 × VCC 0.7 × VCC V

Figure 20: AC Measurement I/O Waveform

Input and output

timing reference levels

Input levels

0.8VCC

0.2VCC

0.7VCC

0.3VCC

0.5VCC

Table 13: Capacitance

Parameter Symbol Test condition Min Max Unit Notes

Output capacitance (DQ1) COUT VOUT = 0V – 8 pF 1

Input capacitance (other pins) CIN VIN = 0V – 6 pF

Note: 1. Values are sampled only, not 100% tested, at TA = 25°C and a frequency of 33 MHz.

75MHz, Serial Peripheral Interface Flash Memory

AC Characteristics

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Table 14: AC Specifications (50 MHz)

Test conditions are specified in the Operating Conditions and AC Measurement Conditions tables

Parameter Symbol Alt Min Typ Max Unit Notes

Clock frequency for the following commands:

FAST_READ, RDLR, PW, PP, WRLR, PE, SE, SSE, DP, RDP,

WREN, WRDI, RDSR, WRSR

fCfCDC – 50 MHz

Clock frequency for READ command fR– DC – 33 MHz

Clock HIGH time tCH tCLH 9 – – ns 1

Clock LOW time tCL tCLL 9 – – ns 1

Clock slew rate (peak-to-peak) 0.1 – – V/ns 2

S# active setup time (relative to C) tSLCH tCSS 5 – – ns

S# not active hold time (relative to C) tCHSL 5 – – ns

Data In setup time tDVCH tDSU 2 – – ns

Data In hold time tCHDX tDH 5 – – ns

S# active hold time (relative to C) tCHSH – 5 – – ns

S# not active setup time (relative to C) tSHCH – 5 – – ns

S# deselect time tSHSL tCSH 100 – – ns

Output disable time tSHQZ tDIS – – 8 ns 2

Clock LOW to output valid tCLQV tV – – 8 ns

Output hold time tCLQX tHO 0 – – ns

WRITE PROTECT setup time tWHSL – 50 – – ns

WRITE PROTECT hold time tSHWL – 100 – – ns

S# to deep power-down mode tDP – – – 3 μs 2

S# HIGH to standby mode tRDP – – – 30 μs 2

Reset pulse width tRLRH – – – 10 ns 2

Reset recovery time tRHSL – – – 3 ns

Chip deselected before RESET# is asserted tSHRH – – – 10 ns

PAGE WRITE cycle time (256 bytes) tPW – – 11 23 ms 3

PAGE PROGRAM cycle time (256 bytes) tPP – – 0.8 3 ms 3

PAGE PROGRAM cycle time (n bytes) tPP – – int(n/8)

× 0.025

3 ms

PAGE ERASE cycle time tPE – – 10 20 ms

SECTOR ERASE cycle time tSE – – 1 5 s

Notes: 1. The tCH and tCL signal values must be greater than or equal to 1/fC.

2. Signal values are guaranteed by characterization; not 100% tested in production.

3. n = number of bytes to program; int(A) corresponds to the upper integer part of A; for

example, int(12/8) = 2, int(32/8) = 4, int(15.3) = 16.

75MHz, Serial Peripheral Interface Flash Memory

AC Characteristics

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Table 15: AC Specifications (75 MHz)

Parameter Symbol Alt Min Typ Max Unit Notes

Clock frequency for all commands (except READ) fCfCDC – 75 MHz

Clock frequency for READ command fR– DC – 33 MHz

Clock HIGH time tCH tCLH 6 – – ns 1

Clock LOW time tCL tCLL 6 – – ns 1

Clock rise time (peak-to-peak) tCLCH – 0.1 – – V/ns 2

S# active setup time (relative to C) tSLCH tCSS 5 – – ns

S# not active hold time (relative to C) tCHSL 5 – – ns

Data In setup time tDVCH tDSU 2 – – ns

Data In hold time tCHDX tDH 5 – – ns

S# active hold time (relative to C) tCHSH – 5 – – ns

S# not active setup time (relative to C) tSHCH – 5 – – ns

S# deselect time tSHSL tCSH 100 – – ns

Output disable time tSHQZ tDIS – – 8 ns 2

Clock LOW to output valid under 30pF tCLQV tV – – 8 ns

Clock LOW to output valid under 10pF – – 6 ns

Output hold time tCLQX tHO 0 – – ns

WRITE PROTECT setup time tWHSL – 20 – – ns 3

WRITE PROTECT hold time tSHWL – 100 – – ns 3

S# HIGH to deep power-down mode tDP – – – 3 μs 2

S# HIGH to standby mode tRDP – – – 30 μs 2

WRITE STATUS REGISTER cycle time tW – – 3 15 μs 4

PAGE WRITE cycle time (256 bytes) tPW – – 11 23 ms 4

PAGE PROGRAM cycle time (256 bytes) tPP – – 0.8 3 ms 4

PAGE PROGRAM cycle time (n bytes) tPP – – int

(n/8) ×

0.025

3 ms 4, 5

PAGE ERASE cycle time tPE – – 10 20 s

SECTOR ERASE cycle time tSE – – 1 5 s

Notes: 1. The tCH and tCL signal values must be greater than or equal to 1/fC.

2. Signal values are guaranteed by characterization; not 100% tested in production.

3. Only applicable as a constraint for the WRITE STATUS REGISTER command when SRWD is

set to 1.

4. When using the PAGE PROGRAM command to program consecutive bytes, optimized

timings are obtained in one sequence that includes all the bytes rather than in several

sequences of only a few bytes (1 ≤ n ≤ 256).

5. int(A) corresponds to the upper integer part of A; for example, int(12/8) = 2, int(32/8) =

4, int(15.3) = 16.

75MHz, Serial Peripheral Interface Flash Memory

AC Characteristics

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Table 16: Reset Specifications

Parameter Symbol Alt Conditions Min Typ Max Unit Notes

Reset pulse width tRLRH tRST 10 – – μs 1

Chip select HIGH

to Reset HIGH

tSHRH – Chip should have been deselected

before RESET# de-asserted

10 – – ns

Reset recovery

time

tRHSL tREC Clock frequency for commands (see

note)

– – 30 μs 2, 1, 3

Under completion of ERASE or PRO-

GRAM cycle for commands (see

note)

– – 300 μs 1

Device deselected (S# HIGH) and in

standby

– – 0 μs 1

Notes: 1. Value guaranteed by characterization; not 100% tested in production.

2. WRITE ENABLE/DISABLE, READ DATA BYTES, READ DATA BYTES at HIGHER SPEED, PAGE

WRITE, PAGE PROGRAM, PAGE ERASE, SECTOR ERASE, DEEP POWER-DOWN, RELEASE

from DEEP POWER-DOWN, READ STATUS REGISTER, READ IDENTIFICATION.

3. S# remains LOW while RESET# is LOW.

4. PAGE WRITE, PAGE PROGRAM, PAGE ERASE, SECTOR ERASE.

75MHz, Serial Peripheral Interface Flash Memory

AC Characteristics

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Figure 21: Serial Input Timing

DQ0

MSB IN

DQ1

tDVCH

high impedance

LSB IN

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSHtCHSL

Figure 22: Write Protect Setup and Hold during WRSR when SRWD=1 Timing

DQ0

DQ1

high impedance

W#/VPP

tWHSL tSHWL

75MHz, Serial Peripheral Interface Flash Memory

AC Characteristics

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Figure 23: Hold Timing

tCHHL

tHLCH

tHHCH

tHHQXtHLQZ

DQ1

DQ0

HOLD#

tCHHH

Figure 24: Output Timing

DQ1

LSB OUT

DQ0 ADDRESS

LSB IN

tSHQZ

tCH

tCL

tQLQH

tQHQL

tCLQX

tCLQV

tCLQX

tCLQV

Figure 25: Reset AC Timing During PROGRAM or ERASE Cycle

75MHz, Serial Peripheral Interface Flash Memory

AC Characteristics

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tSHRH

tRLRH

tRHSL

RESET#

Don’t Care

75MHz, Serial Peripheral Interface Flash Memory

AC Characteristics

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Package Information

Figure 26: VFQFPN8 (MLP8) 6mm x 5mm

12°

0.20 TYP

0 MIN/

0.05 MAX

5.75 TYP

Pin one

indicator 1.27

TYP

4 +0.30

-0.20

0.60 +0.15

-0.10

0.85 +0.15

-0.05

0.40 +0.08

-0.05

3.40 ±0.20

0.10 MAX/

0 MIN

6 TYP

4.75 TYP

0.05

5 TYP

0.65 TYP

0.10 C B

0.10 C A

0.15 C B

0.10 C A B

0.15 C A

Note: 1. Drawing is not to scale.

75MHz, Serial Peripheral Interface Flash Memory

Package Information

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Figure 27: SO8W 208 mils Body Width

0.1 MAX

1.70 MIN/

1.91 MAX 1.78 MIN/

2.16 MAX 0.15 MIN/

0.25 MAX

5.08 MIN/

5.49 MAX

5.08 MIN/

5.49 MAX

0.5 MIN/

0.8 MAX

0.05 MIN/

0.25 MAX 0º MIN/

10º MAX

7.70 MIN/

8.10 MAX

0.36 MIN/

0.48 MAX

1.27 TYP

Note: 1. Drawing is not to scale.

75MHz, Serial Peripheral Interface Flash Memory

Package Information

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Device Ordering Information

Standard Parts

Micron Serial NOR Flash memory is available in different configurations and densities.

Verify valid part numbers using Micron’s part catalog search at micron.com.

To compare features and specifications by device type, visit micron.com/products.

Contact the factory for any devices not found.

For more information on how to identify products and top-side marking by process

identification letter, refer to technical note TN-12-24, "Serial Flash Memory Device

Marking for the M25P, M25PE, M25PX, and N25Q Product Families."

Table 17: Part Number Information Scheme

Part Number

Category Category Details

Device type M45PE = Page-erasable serial Flash memory

Density 16 = 16Mb (2Mb x 8)

Security – = No extra security

Operating voltage V = VCC = 2.7–3.6V

Package MP = VFQFPN8, 6mm x 5mm (MLP8)

MW = SO8W (208 mil width)

Device grade 6 = Industrial temperature range: –40°C to 85°C; device tested with standard test flow.

Packing option – = Standard packing

T = Tape and reel packing

Plating technology P or G = RoHS-compliant

75MHz, Serial Peripheral Interface Flash Memory

Device Ordering Information

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Revision History

Rev. B – 06/13

• Added SO8W 208 mils Body Width figure

Rev. A – 05/13

• Micron rebrand

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

www.micron.com/productsupport Customer Comment Line: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

75MHz, Serial Peripheral Interface Flash Memory

Revision History

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