1
6MBI100VX-120-50 IGBT Modules
IGBT MODULE (V series)
1200V / 100A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum
ratings Units
Inverter
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=80°C 100
A
Icp 1ms Tc=80°C 200
-Ic 100
-Ic pulse 1ms 200
Collector power dissipation Pc 1 device 520 W
Junction temperature Tj 175
°C
Operating junciton temperature
(under switching conditions) Tjop 150
Case temperature Tc 125
Storage temperature Tstg -40 to +125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M5 3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
2
6MBI100VX-120-50
2
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 100mA 6.0 6.5 7.0 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 20V
IC = 100A
Tj=25°C - 2.30 2.75
V
Tj=125°C - 2.60 -
Tj=150°C - 2.65 -
VCE (sat)
(chip)
VGE = 15V
IC = 100A
Tj=25°C - 1.75 2.20
Tj=125°C - 2.05 -
Tj=150°C - 2.10 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 9.1 - nF
Turn-on time
ton
VCC = 600V
IC = 100A
VGE = +15 / -15V
RG = 1.6Ω
- 0.39 1.20
µs
tr - 0.09 0.60
tr (i) - 0.03 -
Turn-off time toff - 0.53 1.00
tf - 0.06 0.30
Forward on voltage
VF
(terminal) IF = 100A
Tj=25°C - 2.25 2.70
V
Tj=125°C - 2.40 -
Tj=150°C - 2.35 -
VF
(chip) IF = 100A
Tj=25°C - 1.70 2.15
Tj=125°C - 1.85 -
Tj=150°C - 1.80 -
Reverse recovery time trr IF = ±20 - - 0.1 µs
Thermistor
Resistance RT = 25°C - 5000 - Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.29
°C/WInverter FWD - - 0.44
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Equivalent Circuit Schematic
3
3
IGBT Modules
6MBI100VX-120-50
Characteristics (Representative)
[ Inverter ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector-Emitter voltage: VCE[V]
Collector current: IC [A]
VGE=15V / chip
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector current: IC [A]
Collector - Emitter voltage: V
CE [V]
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
Collector - Emitter voltage: V
CE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25
o
C
[ Inverter ]
0
50
100
150
200
0 1 2 3 4 5
VGE=20V 15V
12V
10V
8V
0
50
100
150
200
0 1 2 3 4 5
15V
12V
10V
8V
VGE=20V
0
50
100
150
200
012345
125°C
Tj=25°C 150°C
0
2
4
6
8
5 10 15 20 25
Ic=200A
Ic=100A
Ic= 50A
0.1
1.0
10.0
100.0
0 10 20 30 40
Cies
Coes
Cres
0 250 500 750 1000
VGE
VCE
4
6MBI100VX-120-50
4
IGBT Modules
Gate resistance : Rg [Ω]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.6Ω ,Tj <= 125°C
Collector current: IC [A]
Collector current: IC [A]
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.6Ω
Switching loss vs. Collector current (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj= 125°C
Gate resistance : Rg [Ω]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current: IC [A]
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj= 150°C
Switching time vs. Collector current (typ.)
Collector current: IC [A]
0
50
100
150
200
250
0 200 400 600 800 1000 1200 1400 1600
RBSOA
(Repetitive pulse)
10
100
1000
10000
0 50 100 150 200 250
toff
10
100
1000
10000
0 50 100 150 200 250
toff
10
100
1000
10000
0.1 1.0 10.0 100.0
tr
tf
toff
ton
0
10
20
30
0 50 100 150 200 250
Eon(125°C)
Eon(150°C)
Eoff(125°C)
Err(125°C)
Err(150°C)
Eoff(150°C)
0
10
20
30
0 1 10 100
Eon(125°C)
Eon(150°C)
Eoff(125°C)
Err(125°C)
Err(150°C)
Eoff(150°C)
ton
tr
tf
ton
tr
tf
5
5
IGBT Modules
6MBI100VX-120-50
Forward current : IF [A]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
[ Thermistor ]
Temperature characteristic (typ.)
Transient thermal resistance (max.)
[ Inverter ]
Reverse recovery characteristics (typ.)
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip Vcc=600V, VGE=±15V, Rg=1.6Ω
Forward on voltage : VF [V] Forward current : IF [A]
Temperature [°C ]
Resistance : R [kΩ]
Pulse width : Pw [sec]
Thermal resistanse : Rth(j-c) [ °C/W ]
0.01
0.10
1.00
10.00
0.001 0.010 0.100 1.000
FWD[Inverter]
IGBT[Inverter]
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0
50
100
150
200
0 1 2 3 4
Tj=125°C
Tj=25°C
10
100
1000
0 50 100 150 200 250
trr(150°C)
Tj=150°C
Irr(125°C)
Irr(150°C)
trr(125°C)
Outline Drawings, mm
6
6MBI100VX-120-50 IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
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Technology Co., Ltd.
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