Split Dual SiC
MOSFET Module
100 Amperes/1200 Volts
QJD1210010 Preliminary
112/30/14 Rev. 5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.32 109.8
B 2.21 56.1
C 0.71 18.0
D 3.70±0.02 94.0±0.5
E 2.026 51.46
F 3.17 80.5
G 1.96 49.8
H 1.00 25.5
K 0.87 22.0
L 0.266 6.75
M 0.26 6.5
N 0.59 15.0
P 0.586 14.89
Dimensions Inches Millimeters
Q 0.449 11.40
R 0.885 22.49
S 1.047 26.6
T 0.15 3.80
U 0.16 4.0
V 0.30 7.5
W 0.045 1.15
X 0.03 0.8
Y 0.16 4.0
Z 0.47 12.1
AA 0.17 Dia. 4.3 Dia.
AB 0.10 Dia. 2.5 Dia.
AC 0.08 Dia. 2.1 Dia.
G2 (19 - 20)
S2 (17 - 18)
D2 (4 - 6)
S2 (1 - 3)
G1 (15 - 16)
S1 (13 - 14)
D1 (10 - 12)
S1 (7 - 9)
P Q
Q
Q
T
R
S
D
1 2 3 4 5 6 7 8 9 10 11 12
15 14 1316
19 18 1720
F
A
L
W
V
T
G
B
MN
C
H K
DETAIL "A"
X
U
DETAIL "A"
E
AA
AB
Z
Y
AC
DETAIL "B"
DETAIL "B"
Description:
Powerex Silicon Carbide MOSFET
Modules are designed for use in
high frequency applications. Each
module consists of two MOSFET
Silicon Carbide Transistors with
each transistor having a reverse
connected fast recovery free-wheel
silicon carbide Schottky diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Junction Temperature: 175°C
£ Silicon Carbide Chips
£ Low Internal Inductance
£ Industry Leading RDS(on)
£ High Speed Switching
£ Low Switching Losses
£ Low Capacitance
£ Low Drive Requirement
£ Fast 100A Free Wheeling
Schottky Diode
£ High Power Density
£ Isolated Baseplate
£ Aluminum Nitride Isolation
£ 2 Individual Switches
per Module
£ Copper Baseplate
£ RoHS Compliant
Applications:
£ Energy Saving Power
Systems such as:
Fans; Pumps; Consumer
Appliances
£ High Frequency Type Power
Systems such as:
UPS; High Speed Motor Drives;
Induction Heating; Welder;
Robotics
£ High Temperature Power
Systems such as:
Power Electronics in Electric
Vehicle and Aviation Systems
2
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
12/30/14 Rev. 5
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol QJD1210010 Units
Drain-Source Voltage (G-S Short) VDSS 1200 Volts
Gate-Source Voltage VGSS -5 / +25 Volts
Drain Current (Continuous) at TC = 150°C ID 100 Amperes
Drain Current (Pulsed)* ID(pulse) 250 Amperes
Maximum Power Dissipation (TC = 25°C, Tj < 175°C) PD 1080 Watts
Junction Temperature Tj -40 to 175 °C
Storage Temperature Tstg -40 to 150 °C
Mounting Torque, M6 Mounting Screws — 40 in-lb
Module Weight (Typical) — 270 Grams
V Isolation Voltage VRMS 3000 Volts
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
12/30/14 Rev. 5
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
MOSFET Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Drain-Source Breakdown Voltage V(BR)DSS ID = 50μA, VGS = 0 1200 — — Volts
Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V — 0.35 2.6 mA
Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V, Tj = 175°C — 0.40 4.0 mA
Gate Leakage Current IGSS VDS = 0, VGS = 20V — — 1.5 µA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 10mA 1.5 2.5 5.0 Volts
VDS = VGS, ID = 10mA, Tj = 175°C 1.0 1.7 5.0 Volts
Drain-Source On Resistance RDS(on) ID = 100A, VGS = 20V — 15 25 mΩ
ID = 100A, VGS = 20V, Tj = 175°C — 20 32 mΩ
Gate to Source Charge Qgs VDD = 800V, ID = 100A — 140 — nC
Gate to Drain Charge Qgd VDD = 800V, ID = 100A — 220 — nC
Total Gate Charge QG VCC = 800V, IC = 100A, VGS = -5/20V — 500 — nC
Body Diode Forward Voltage VSD IF = 50A, VGS = -5V — 4.0 — Volts
Input Capacitance Ciss — 10.2 — nF
Output Capacitance Coss VGS = 0, VDS = 800V, f = 1MHz — 1.0 — nF
Reverse Transfer Capacitance Crss — 0.1 — nF
Turn-on Delay Time td(on) VDD = 800V, ID = 100A, — 17.2 — ns
Rise Time tr VGS = -2/20V, — 13.6 — ns
Turn-off Delay Time td(off) RG = 6.8Ω — 62 — ns
Fall Time tf Inductive Load — 35.6 — ns
**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.
4
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
12/30/14 Rev. 5
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Diode Forward Voltage VFM IF = 100A, VGS = -5V — 1.6 2.0 Volts
IF = 100A, VGS = -5V, Tj = 175°C — 2.5 3.2 Volts
Diode Capacitive Charge QC VR = 1200V, IF = 100A, di/dt = 4000A/μs — 550 — nC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction-to-Case Rth(j-c) MOSFET Part — — 0.138 °C/W
Thermal Resistance, Junction-to-Case Rth(j-c) Diode Part — — 0.243 °C/W
Contact Thermal Resistance Rth(c-s) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W
Internal Inductance Lint MOSFET Part — 10 — nH
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
12/30/14 Rev. 5
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
GATE SOURCE VOLTAGE, VGS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0515 20
Tj = 25°C
Tj = 175°C
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 25ºC)
0 4 8 12 16 20
0
VGE = 20V
VGS = 20V
10
12
16
18
14
Tj = 25°C
600
400
500
200
300
100
0
400
200
300
100
10
JUNCTION TEMPERATURE, Tj, (°C)
NORMALIZED ON-RESISTANCE
NORMALIZED ON-RESISTANCE
VS. TEMPERATURE
2.0
0.8
1.2
0
0.4
1.6
020050 100 150
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 175ºC)
0 4 8 12 16 20
0
10
12
14
500
400
200
300
100
VGE = 20V
18
16
6
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
12/30/14 Rev. 5
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Ciss
Coss
Crss
VGS = 20V
f = 1MHz
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
TYPICAL CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
0 1000200 400 600 800
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
200100 400300 500 600
ID = 100A
CAPACITANCE, Ciss, Coss, Crss
50nF
5nF
500pF
50pF
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MOSFET)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.138°C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3
FORWARD VOLTAGE, VF, (VOLTS)
FORWARD CURRENT, IF, (μA)
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
200
150
013
100
50
0
Vf = 25°C
Vf = 150°C
Vf = 175°C
2
QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
12/30/14 Rev. 5
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.243°C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3