APT26M100JCU2
APT26M100JCU2 – Rev 0 September, 2009
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VDS =1000V
VGS = 0V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 18A 330 396
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 7868
Coss Output Capacitance 825
Crss Reverse Transfer Capac itance
VGS = 0V
VDS = 25V
f = 1MHz 104 pF
Qg Total gate Charge 305
Qgs Gate – Source Charge 55
Qgd Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 18A 145
nC
Td(on) Turn-on Delay Time 44
Tr Rise Time 40
Td(off) Turn-off Delay Time 150
Tf Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 2.2Ω 38
ns
SiC chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 32 200
IRM Maximum Reverse Leakage Current VR=1200V Tj = 175°C 56 1000 µA
IF DC Forward Current Tc = 100°C 10 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 10A Tj = 175°C 2.3 3 V
QC Total Capacitive Charge IF = 10A, VR = 600V
di/dt =500A/µs 80 nC
f = 1MHz, VR = 200V 96
C Total Capacitance f = 1MHz, VR = 400V 69 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Mosfet 0.23
RthJC Junction to Case Thermal Resistance SiC Diode 1.65
RthJA Junction to Ambient (IGBT & Diode) 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -40 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (M ounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g