OL. pe Wss7soa1 00148125 7 Tt 3875081 G E SOLID STATE ' Standard Power MOSFETs _ D1E 18725 D7 37-7 RFM4N35, RFM4N40, RFP4N35, RFP4N40 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 4 A, 350 V and 400 V a Tps(on) = 1.50 Features: @ SOA is power-dissipation limited = Nanosecond switching speeds @ Linear transfer characteristics 8 High input impedance Majority carrier device The RFM4N35 and RFM4N40 and the RFP4N35 and RFP4N40* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor driv- ers, relay drivers, and drivers for high-power bipolar switch- ing transistors requiring high speed and low gate-drive power. These types can be operated directly from inte- grated circuits. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the JEDEC TO-220A8 plastic package. The RFM and RFP series were formerly RCA developmental numbers TA9393 and TA9394, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM4N35 DRAIN-SOURCE VOLTAGE ...,....... Voss 350 DRAIN-GATE VOLTAGE (R,.=1 MQ) 2. Voor 350 GATE-SOURCE VOLTAGE .............- Ves DRAIN CURRENT, RMS Continuous . lb Pulsed ........-.0058 ipa POWER DISSIPATION @ Tc=25C ....... P; 75 Derate above Tc=25C. 0.6 OPERATING AND STORAGE TEMPERATURE ...............-.. Ty. Tsty 68 _ - File Number 1491 TERMINAL DIAGRAM 0 $s 92CS-33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM4N35 oRA RFMAN40 source {FLANGE GATE 92CS-37801 REP4N3s JEDEC TO-204AA AFP4N40 DRAIN ~ (FLANGE) GATE TOP VIEW 92CS-39528 JEDEC TO-220AB RFM4N40 RFP4N35 RFP4N40 400 350 400 400 350 400 20 4 8 75 60 60 0.6 048 0.48 -55 to +150 Srr<<< = 3 3875081 G E SOLID STATE OL DEM 3875081 o01a126 9 [rs7-!! Standard Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40 ELECTRICAL CHARACTERISTICS, Ai Case Temperature (Tc) 25 C unless otherwise specified. LIMITS CHARACTERISTICS SYMBOL | conn TIONS aeaNSe Peeanae | UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown Voltage BVoss lo=1 mA 350 _ 400 _ v Ves=0 Gate Threshold Voltage Vas(th) Vas=Vos 2 4 2 4 Vv lo=1 mA Zero Gate Voltage Drain Current loss Vos=280 V - 10 _ _ Vps=320 V = = = 10 Te=125C HA Vos= 280 V _ 100 _ _ Vos=320 V _ = _ 100 Gate-Source Leakage Current less Ves=+20 V _ 100 - 100 nA Vos=0 Drain-Source On Voltage Vos(on)* Ip=2A _- 4 _ 4 Ves=10 V Vv 1p=4 A _ 12 _ 12 Ves=10 V Static Drain-Source On Resistance Tos(on)* IDb=2A - 1.6 _ 1.5 Q Ves=10V Forward Transconductance Os Vps=10 V 1 => 1 _ mho [p=2 A Input Capacitance Css Vos=25 V _ 650 = 650 Output Capacitance Coss Ves=0 V _ 150 = 150 pF Reverse Transfer Capacitance Crs f=1 MHz = 50 _ 50 Turn-On Delay Time ts(on) Vpp=200 V 12(typ) 45 12(typ) 45 Rise Time . t Ib=2 A 42ityp) 60 42(typ) 60 ns Turn-Oft Delay Time ta(off) Raen=Rgs=50 Q 130(typ) 200 130(typ) 200 Fall Time t Ves=10V 62(typ) 100 62(typ) 100 Thermal Resistance Rc RFM4N35, - 1.67 _ 1.67 Junction-to-Case RFEM4N40 RFP4N35, _ 2.083 _ 2.083 cw RFP4N40 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS CHARACTERISTIC SYMBOL | conmiSIONS ENS. Aebanae | UNITS MIN. MAX, MIN. MAX. Diode Forward Voltage Vsp 2 Isp=2 A _ 1.4 = 1.4 Vv Reverse Recovery Time te dir 1100 Alus B00(typ) 800(typ) ns *Pulsed: Pulse duration = 300 us max., duty cycle = 2%. 69 "3875081 G E SOLID STATE 01 ve Waszsoan Oo1gie? a iE TSI). . Standard Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40 a| CASE TEMPERATURE {To} = 25C g| (CURVES MUST BE DERATEO LINEARLY WITH INCREASE iN 4| TEMPERATURE) 6 (MAX) CONTINUOUS GRAIN CURRENT (Ip) A THIS AREA IS BY Voss (MAX) = 350V RFM4N35, RFP4N35 Voss (MAX) = 400V RFM4N40, RFP4N40 6 8 8 6 ! 10 100 1000 ORAIN TO SOURCE YOLTAGE (Vpg} V 92C8-37048R1 Fig. 1 Maximum operating areas for all types Vos 10 Iptl mA [ves (18 0] GATE 50 190 CASE TEMPEAATURE [To }C 928-34364R2 JUNCTION TEMPERATURE (Ts) *C 928-37046 Fig. 2 Power dissipation vs. temperature derating curve Fig. 3 Typical normalized gate threshold voltage as a function for all types. of junction temperature for all types. Ipr2A VogtlO Vps#20 PULSE TEST PULSE DURATION=80pS OUTY CYCLE s2% ON STATE DRAIN CURRENT [Ip(on)] A JUNCTION TEMPERATURE (Ty] *C GATE -TO - SOURCE VOLTAGE (Vgs) V 9205-37049 9208-37050 Fig. 4 Normalized drain-to-source on resistance to junction Fig 5 Typical transfer charactenstics for all types. temperature for all types 3875081 G E SOLID STATE Ol pe sazsoa1 go1ai2a 2 I; T39-// Standard Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40 400 T y T T PULSE TEST 8Yoss PULSE DURATION + 60S DUTY CYCLE S2% 28" L GATE de CASE TEMPERATURE 25c SOURCE < ao0 VOLTAGE | Vogt 20; vA Yoo = Yoss Yoo = Voss a me e L RL=1008 de 8 Ig (REF) =0 45 mA 3 E 3 _ $ u 200 Yqs=l0 a g Pook 075 Voss 075 Voss 4a 2 3 0 50 Yogs 2 50 Yoss- 2 yy 025 Yos a 100) 78 Noss s 8 Veg" +5V . 2 DRAIN SOURCE VOLTAGE oe Vogt t4 IG {REF 1g (REF Tgiach igtAChh 5 DRAIN TO SQURCE VOLTAGE {Vo3) V TIME Micseseconds e2cSa7685 928-s7082. Fig. 6 - Normalized switching waveforms for constant gate-current Fig 7 Typical saturation characteristics for alf types. drive. Refer to RCA Power MOSFETs PMP411A. Veg =10V PULSE TEST PULSE DURATION = 80 2S DUTY CYCLES FREQUENCY (f}= | MHz Ter 40% wu 3 Zz Za oz nt Bs | us 2a > a ae go Zz = z a CAPACITANCE (C} pF DRAIN CURRENT (Ip) & 30 9268-37083 DRAIN -10- SOURCE VOLTAGE (Vgg) - 92s-37054 Fig. 8 - Typical drain-to-source on resistance as a function Fig 9 Capacitance as a function of drain-to-source of drain current for alt types. voltage for ail types. foon [OTT TT ee o 1 TO SCOPE I ; = Yous 200v Vpg S10 i I KELVIN PULSE TEST CON TACT PULSE DURATION = 60, uS | I DUTY CYCLE $ 2% | ! 8 I . : | 5 1 8 i r I TT a as 92s-37380 ORAIN CURRENT (Ip) A 92C5-37055 Fig. 10 Typical forward transconductance as a function Fig. 11 Switching Time Test Circuit of drain current tor all types. wo 71