V1PL45 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS(R) eSMP(R) Series * Very low profile - typical height of 0.65 mm Available * Ideal for automated placement * Trench MOS Schottky technology * Low forward voltage drop * Low power loss, high efficiency Top View Bottom View * Meets MSL level 1, per LF maximum peak of 260 C MicroSMP (DO-219AD) Anode J-STD-020, * AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications, in commercial, industrial, and automotive applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, and RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified 1.0 A VRRM 45 V IFSM 25 A VF at IF = 1.0 A (125 C) 0.36 V TJ max. 150 C Package MicroSMP (DO-219AD) Circuit configuration Single Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code V1PL45 1LE Maximum repetitive peak reverse voltage VRRM 45 Maximum DC forward current IF(AV) 1.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 25 TJ (1), TSTG -40 to +150 Operating junction and storage temperature range UNIT V A C Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 03-May-2018 Document Number: 87642 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V1PL45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A IF = 1.0 A Instantaneous forward voltage per diode IF = 0.5 A IF = 1.0 A Reverse current per diode VR = 45 V Typical junction capacitance 4.0 V, 1 MHz SYMBOL TYP. TA = 25 C VF (1) TA = 125 C TA = 25 C 0.41 - 0.45 0.53 0.30 - 0.36 0.44 - 0.25 2 10 200 - IR (2) TA = 125 C CJ MAX. UNIT V mA pF Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance V1PL45 (1)(2) UNIT 130 RJM (3) C/W 20 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/ R D J JA (2) Free air, mounted on FR4 PCB, 2 oz. standard footprint, R JA - junction to ambient (3) Mounted on FR4 PCB, 2 oz. standard footprint, R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V1PL45M3/H 0.006 H 4500 7" diameter plastic tape and reel V1PL45HM3/H (1) 0.006 H 4500 7" diameter plastic tape and reel Note (1) AEC-Q101 qualified 1.2 0.5 D = 0.8 TM =142 C, RthJM =20 C/W 1.0 D = 0.5 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 0.8 0.6 TA =25 C, RthJA =130 C/W 0.4 0.2 0.4 D = 0.3 D = 1.0 D = 0.2 0.3 0.2 D = 0.1 T 0.1 TM measured at cathode terminal mount typical values D = tp/T 0 tp 0.0 0 25 50 75 100 125 150 Mount Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve 0 0.2 0.4 0.6 0.8 1 1.2 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics Revision: 03-May-2018 Document Number: 87642 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V1PL45 www.vishay.com Vishay General Semiconductor 1000 TJ = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 125 C 1 TJ = 100 C TJ = 25 C 0.1 TJ = -40 C TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 100 10 1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.8 1 Instantaneous Forward Voltage (V) Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) Fig. 5 - Typical Junction Capacitance 10 TJ = 150 C TJ = 125 C TJ = 100 C 0.1 0.01 TJ = 25 C 0.001 TJ = -40 C 0.0001 0.00001 10 20 30 40 50 60 70 80 90 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 1 10 100 1000 Junction to ambient 100 10 1 0.01 0.1 Percent of Rated Peak Reverse Voltage (%) 1 10 100 t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Revision: 03-May-2018 Document Number: 87642 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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