V1PL45
www.vishay.com Vishay General Semiconductor
Revision: 03-May-2018 1Document Number: 87642
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Surface Mount Trench MOS Barrier Schottky Rectifier
DESIGN SUPPORT TOOLS
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop
• Low power loss, high efficiency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Note
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 45 V
IFSM 25 A
VF at IF = 1.0 A (125 °C) 0.36 V
TJ max. 150 °C
Package MicroSMP (DO-219AD)
Circuit configuration Single
MicroSMP (DO-219AD)
Top View Bottom View
TMBS® eSMP® Series
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Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PL45 UNIT
Device marking code 1LE
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum DC forward current IF(AV) 1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 25
Operating junction and storage temperature range TJ (1), TSTG -40 to +150 °C