V1PL45
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Revision: 03-May-2018 1Document Number: 87642
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
DESIGN SUPPORT TOOLS
FEATURES
Very low profile - typical height of 0.65 mm
Ideal for automated placement
Trench MOS Schottky technology
Low forward voltage drop
Low power loss, high efficiency
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Note
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 45 V
IFSM 25 A
VF at IF = 1.0 A (125 °C) 0.36 V
TJ max. 150 °C
Package MicroSMP (DO-219AD)
Circuit configuration Single
MicroSMP (DO-219AD)
Top View Bottom View
TMBS® eSMP® Series
Cathode
Anode
click logo to get started
Available
Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PL45 UNIT
Device marking code 1LE
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum DC forward current IF(AV) 1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 25
Operating junction and storage temperature range TJ (1), TSTG -40 to +150 °C
V1PL45
www.vishay.com Vishay General Semiconductor
Revision: 03-May-2018 2Document Number: 87642
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/ RJA
(2) Free air, mounted on FR4 PCB, 2 oz. standard footprint, RJA - junction to ambient
(3) Mounted on FR4 PCB, 2 oz. standard footprint, RJM - junction to mount
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Average Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF = 0.5 A TA = 25 °C
VF (1)
0.41 -
V
IF = 1.0 A 0.45 0.53
IF = 0.5 A TA = 125 °C 0.30 -
IF = 1.0 A 0.36 0.44
Reverse current per diode VR = 45 V TA = 25 °C IR (2) -0.25
mA
TA = 125 °C 2 10
Typical junction capacitance 4.0 V, 1 MHz CJ200 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PL45 UNIT
Typical thermal resistance RJA (1)(2) 130 °C/W
RJM (3) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V1PL45M3/H 0.006 H 4500 7" diameter plastic tape and reel
V1PL45HM3/H (1) 0.006 H 4500 7" diameter plastic tape and reel
0
0.2
0.4
0.6
0.8
1.0
1.2
0255075100125150
Average Forward Rectied Current (A)
Mount Temperature (°C)
TMmeasured at cathode terminal mount
typical values
TM =142 ƱC, RthJM =20 ƱC/W
TA =25 ƱC, RthJA =130 ƱC/W
0.0
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1 1.2
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
V1PL45
www.vishay.com Vishay General Semiconductor
Revision: 03-May-2018 3Document Number: 87642
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ= 150 °C
TJ= 25 °C
TJ= 100 °C
TJ= 125 °C
TJ= -40 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= -40 °C
1
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to ambient
0.106 (2.70)
0.091 (2.30)
0.055 (1.40)
0.047 (1.20)
Cathode Band
MicroSMP (DO-219AD)
0.030 (0.75)
0.022 (0.55)
0.030 (0.75)
0.022 (0.55)
0.059 (1.50)
0.043 (1.10)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.020 (0.50)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
0.079
(2.00)
0.032
(0.80)
0.032
(0.80)
Mounting Pad Layout
0.029 (0.73)
0.025 (0.63)
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Revision: 08-Feb-17 1Document Number: 91000
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