Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode 30 V, 1.8 A, 299 m Features General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. Max rDS(on) = 299 m at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 m at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. HBM ESD protection level > 1600 V (Note 3) RoHS Compliant Application Boost Functions D NC A D Pin1 K S G K TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 C (Note 1a) -Pulsed PD Ratings 30 Units V 12 V 1.8 4.5 Power Dissipation for Single Operation TA = 25 C (Note 1a) 1.4 Power Dissipation for Single Operation TA = 25 C (Note 1b) 0.6 A W VRRM Schottky Repetitive Peak Reverse Voltage 28 V IO Schottky Average Forward Current 1 A TJ, TSTG Operating and Storage Junction Temperature Range (Note 4) -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 RJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 RJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1c) 110 RJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1d) 234 C/W Package Marking and Ordering Information Device Marking 1T Device FDFME3N311ZT (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7'' Tape Width 8mm Quantity 5000 units www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode July 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 12 V, VDS = 0 V 10 A 1.5 V 30 V 25 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C VGS = 4.5 V, ID = 1.6 A 235 299 rDS(on) Drain to Source On Resistance VGS = 2.5 V, ID = 1.3 A 296 410 VGS = 4.5 V, ID = 1.6 A,TJ = 125 C 365 603 VDS = 5 V, ID = 1.6 A 2.8 VDS = 15 V, VGS = 0 V, f = 1 MHz 55 75 pF 15 20 pF 7 10 pF gFS Forward Transconductance 0.5 1 -3 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 7.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 15 V, ID = 1.6 A, VGS = 4.5 V, RGEN = 6 VGS = 4.5 V, VDD = 15 V, ID = 1.6 A 6 12 8 16 ns ns 22 35 ns 1.4 10 ns 1 1.4 nC 0.2 nC 0.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 0.9 A (Note 2) IF = 1.6 A, di/dt = 100 A/s 0.9 1.2 V 12 22 ns 3.1 10 nC Schottky Diode Characteristics IR Reverse Leakage VR = 28 V TJ = 25 C TJ = 85 C 15 100 A 0.46 4.7 mA VF Forward Voltage IF = 1 A TJ = 25 C TJ = 85 C 0.47 0.57 0.45 VF Forward Voltage IF = 500 mA TJ = 25 C TJ = 85 C (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 2 0.38 0.33 0.48 V V www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25 C unless otherwise noted Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) MOSFET RJA = 90 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. (b) MOSFET RJA = 195 C/W when mounted on a minimum pad of 2 oz copper. (c) Schottky RJA = 110 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB. (d) Schottky RJA = 234 C/W when mounted on a minimum pad of 2 oz copper. b. 195 C/W when mounted on a minimum pad of 2 oz copper. a. 90 C/W when mounted on a 1 in2 pad of 2 oz copper. d. 234 C/W when mounted on a minimum pad of 2 oz copper. c. 110 C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. 4. Rating is applicable to MOSFET only. (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 3 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics 2.5 VGS = 6 V VGS = 4.5 V VGS = 3.5 V 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 4 VGS = 3 V 2 VGS = 2.5 V 1 VGS = 1.8 V 0 0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1 2 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.0 VGS = 1.8 V VGS = 2.5 V 1.5 1.0 VGS = 3 V VGS = 3.5 V VGS = 4.5 V 0.5 3 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.0 0.8 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 800 ID = 1.6 A 600 TJ = 125 oC 400 200 TJ = 25 oC 0 1.5 150 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 4 10 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 4 1000 ID = 1.6 A VGS = 4.5 V -25 3 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0.6 -50 2 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.6 VGS = 6 V 3 VDS = 5 V 2 TJ = 150 oC 1 TJ = 25 oC TJ = -55 oC 0 0 1 2 3 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.2 4 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 4 1.2 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 100 ID = 1.6 A Ciss VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = 15 V VDD = 20 V 1.5 Coss Crss 10 f = 1 MHz VGS = 0 V 0.0 0.0 0.2 0.4 0.6 0.8 1.0 4 0.1 1.2 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 10 -2 10 Ig, GATE LEAKAGE CURRENT (A) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 1 1 ms 10 ms 0.1 THIS AREA IS LIMITED BY rDS(on) 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED 0.01 o RJA = 195 C/W TA = 25 oC 0.001 0.1 1 10 VDS = 0 V -3 10 -4 10 TJ = 150 oC -5 10 -6 10 -7 10 TJ = 25 oC -8 10 -9 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 0 5 10 15 20 VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. Gate Leakage Current vs Gate to Source Voltage Figure 9. Forward Bias Safe Operating Area 5 IF, FORWARD CURRENT (A) IR, REVERSE LEAKAGE CURRENT (mA) -2 10 TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) TJ = 25 oC 0.01 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (mV) Figure 11. Schottky Diode Reverse Current (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 TJ = 125 oC 0.1 0.001 0.0 -6 10 1 Figure 12. Schottky Diode Forward Voltage 5 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 100 10 SINGLE PULSE o RJA = 195 C/W o TA = 25 C 1 0.1 -4 10 -3 10 -2 -1 10 10 1 100 10 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 195 C/W 0.01 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 14. Junction-to-Ambient Transient Thermal Response Curve (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 6 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Dimensional Outline and Pad Layout (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 (c)2010 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C3 8 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPMTM F-PFSTM AccuPowerTM (R)* PowerTrench(R) FRFET(R) Auto-SPMTM SM Global Power Resource PowerXSTM Build it NowTM The Power Franchise(R) (R) Green FPSTM Programmable Active DroopTM CorePLUSTM Green FPSTM e-SeriesTM QFET(R) CorePOWERTM QSTM GmaxTM CROSSVOLTTM TinyBoostTM Quiet SeriesTM GTOTM CTLTM TinyBuckTM RapidConfigureTM IntelliMAXTM Current Transfer LogicTM TinyCalcTM TM ISOPLANARTM DEUXPEED(R) TinyLogic(R) Dual CoolTM MegaBuckTM TINYOPTOTM (R) Saving our world, 1mW/W/kW at a timeTM EcoSPARK MICROCOUPLERTM TinyPowerTM SignalWiseTM EfficentMaxTM MicroFETTM TinyPWMTM SmartMaxTM MicroPakTM ESBCTM TinyWireTM SMART STARTTM MicroPak2TM (R) TriFault DetectTM SPM(R) MillerDriveTM TRUECURRENTTM* (R) STEALTHTM MotionMaxTM Fairchild SerDesTM (R) SuperFETTM Motion-SPMTM Fairchild Semiconductor SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) FACT(R) (R) UHC(R) (R) OPTOPLANAR SuperSOTTM-8 FAST (R) Ultra FRFETTM SupreMOSTM FastvCoreTM UniFETTM SyncFETTM FETBenchTM VCXTM Sync-LockTM FlashWriter(R) * PDP SPMTM VisualMaxTM FPSTM XSTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com