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July 2010
©2010 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C3 www.fairchildsemi.com
1
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
FDFME3N311ZT
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
30 V, 1.8 A, 299 mΩ
Features
Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A
Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low input capacitance,
total gate charge and on-state resistance. An independently
connected schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 1.6x1.6 Thin pa ckage offers exceptio nal therma l
performance for it's physical size and is well suited to switching
and linear mode applications.
Application
Boost Functions
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±12 V
IDDrain Current -Continuous TA = 25 °C (Note 1a) 1.8 A
-Pulsed 4.5
PDPower Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4 W
Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.6
VRRM Schottky Repetitive Peak Reverse Voltage 28 V
IOSchottky Average Forward Current 1 A
TJ, TSTG Operating and Storage Junction Temperature Range (Note 4) -55 to +150 °C
RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90
°C/W
RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195
RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1c) 110
RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1d) 234
Device Marking Device Package Reel Size Tape Width Quantity
1T FDFME3N311ZT MicroFET 1.6x1.6 Thin 7’’ 8mm 5000 units
BOTTOM
TOP
G
A
NC D
S
K
MicroFET 1.6x1.6 Thin
K
D
Pin1
www.fairchildsemi.com
2
©2010 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C3
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Schottky Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 25 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±10 μA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.511.5V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -3 mV/° C
rDS(on) Drain to Source On Resistance VGS = 4.5 V, ID = 1.6 A 235 299 mΩVGS = 2.5 V, ID = 1.3 A 296 410
VGS = 4.5 V , ID = 1.6 A,TJ = 125 °C 365 603
gFS Forward Transconductance VDS = 5 V, ID = 1.6 A 2.8 S
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1 MHz
55 75 pF
Coss Output Capacitance 15 20 pF
Crss Reverse Transfer Capacitance 7 10 pF
RgGate Resistance 7.5 Ω
td(on) Turn-On Delay Time VDD = 15 V, ID = 1.6 A,
VGS = 4.5 V, RGEN = 6 Ω
612ns
trRise Time 816ns
td(off) Turn-Off Delay Time 22 35 ns
tfFall Time 1.4 10 ns
QgTotal Gate Charge VGS = 4.5 V, VDD = 15 V,
ID = 1.6 A
11.4nC
Qgs Gate to Source Gate Charge 0.2 nC
Qgd Gate to Drain “Miller” Charge 0.3 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 0.9 A (Note 2) 0.9 1.2 V
trr Reverse Recovery Time IF = 1.6 A, di/dt = 100 A/μs 12 22 ns
Qrr Reverse Recovery Charge 3.1 10 nC
IRReverse Leakage VR = 28 V TJ = 25 °C
TJ = 85 °C 15 100 μA
0.46 4.7 mA
VFForward Voltage IF = 1 A TJ = 25 °C
TJ = 85 °C 0.47 0.57 V
0.45
VFForward Voltage IF = 500 mA TJ = 25 °C
TJ = 85 °C 0.38 0.48 V
0.33
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3
©2010 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C3
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) MOSFET RθJA = 90 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB.
(b) MOSFET RθJA = 195 °C/W when mounted on a minimum pad of 2 oz copper.
(c) Schottky RθJA = 110 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB.
(d) Schottky RθJA = 234 °C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
4. Rating is applicable to MOSFET only.
a. 90 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.
c. 110 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
d. 234 °C/W wh en mo un ted on a
minimum pad of 2 oz copper.
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4
©2010 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C3
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
0123
0
1
2
3
4
VGS = 3.5 V
VGS = 4.5 V
VGS = 3 V
PULSE D U RATION = 80 μs
DUTY CYCLE = 0.5% MA X
VGS = 2.5 V
VGS = 1.8 V
VGS = 6 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTA GE (V)
On Region Characteristics Figure 2.
01234
0.5
1.0
1.5
2.0
2.5
VGS = 4.5 V VGS = 6 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 2.5 V
VGS = 1.8 V
VGS = 3 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 1.6 A
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUN CTION TEM PERATURE (oC)
vs Junction Te mperature Figure 4.
1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
200
400
600
800
1000
ID = 1.6 A
TJ = 25 oC
TJ = 125 oC
VGS, G ATE TO SO U R C E VO L TAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE DU RATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
01234
0
1
2
3
4
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SO U R CE V O LTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
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5
©2010 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C3
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Figure 7.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0
1.5
3.0
4.5 ID = 1.6 A
VDD = 15 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 20 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
4
10
100
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9. Forward Bias Safe
Operating Are a Figure 10. Gate Leakage Current vs
Gate to Source Voltage
Figure 11. Schottky Diode Reverse Current Figure 12. Schottky Diode Forward Voltage
Typical Characteristics TJ = 25°C unless otherwise noted
0 5 10 15 20
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
VDS = 0 V
TJ = 25 oC
TJ = 150 oC
VGS, GATE TO SOURCE VOLTAG E (V)
Ig, GATE LEAKAG E CURRENT (A)
0.1 1 10 100
0.001
0.01
0.1
1
10
DC
10 s
1 s
100 m s
10 m s
1 ms
100 us
ID, DRAIN CURRENT (A)
VDS, DRA IN to SOURCE VOLTA G E (V)
THI S AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 195 oC/W
TA = 25 oC
0.0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
5
TJ = 25 oC
TJ = 125 oC
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (mV)
0 5 10 15 20 25 30
10-6
10-5
10-4
10-3
10-2
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
IR, REVERSE LEAKAGE CURRENT (mA)
VR, REVERSE VO L TAGE (V)
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6
©2010 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C3
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Figure 13. Single Pulse Maximum Power Dissipation
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
10-4 10-3 10-2 10-1 110
100 1000
0.01
0.1
1
SINGLE PULSE
RθJA = 195 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURA TION (s)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
2
PDM
t1t2
NOTES:
DUTY FAC TOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
10-4 10-3 10-2 10-1 110
100 1000
0.1
1
10
100
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 195oC/W
TA = 25oC
t, PULSE WIDTH (s)
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7
©2010 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C3
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Dimensional Outline and Pad Layout
FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
©2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FDFME3N311ZT Rev.C3
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