HI-SINCERITY Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 1/4 MICROELECTRONICS CORP. HBT136AE TRIAC Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TO-220AB Quick Reference Data Symbol VDRM IT(RMS) ITSM Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current Max. 600 4 25 Unit V A A Pin Configuration Pin 1 2 3 tab Description Main terminal 1 Main terminal 2 Gate Main terminal 2 Symbol tab T2 T1 1 2 3 G Limtiing Values Symbol VDRM IT(RMS) ITSM I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj HBT136AE Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering T2+ G+ T2+ GT2- GT2- G+ Peak gate current Peak gate voltage Peak gate power Average gate power Storage Temperature Range Operating junction temperature Min. - Max. 600 4 25 3.1 Units V A A A2S - 50 A/us - 50 50 10 2 5 5 0.5 150 125 A/us A/us A/us A V W W C C HSMC Product Specification HI-SINCERITY Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 2/4 MICROELECTRONICS CORP. Static Characteristics (Ta=25C) Symbol Parameter IGT Gate Trigger Current IL Latching Current IH VT VGT ID Holding Current On-state Voltage Gate Trigger Voltage Off-state Leakage Current Conditions VD=12V, IG=0.1A, T2+ G+ VD=12V, IG=0.1A, T2+ GVD=12V, IG=0.1A, T2- GVD=12V, IG=0.1A, T2- G+ VD=12V, IGT=0.1A, T2+ G+ VD=12V, IGT=0.1A, T2+ GVD=12V, IGT=0.1A, T2- GVD=12V, IGT=0.1A, T2- G+ VD=12V, IGT=0.1A IT=5A VD=12V, IT=0.1A VD=VDRM HBT136AE Min. Typ. Max. 5 10 6 10 6 10 18 25 15 20 15 20 6 15 1.4 1.70 0.8 1.5 Unit mA mA mA mA mA mA mA mA mA V V - - 200 uA Min. Typ. Max. Unit - 50 - V/us - 2 - us Conditions Min. Typ. Max. Unit Full cycle Half cycle In free air - 60 3.0 3.7 - K/W K/W K/W Static Characteristics Symbol Parameter dVD/dt Critical rate of rise of off-state voltage tgt Gate controlled turnon time Conditions VDM=67% VDRM(max); Tj= 125C; exponential waveform; gate open circuit ITM=6A; VD=VDRM(max); IG=0.1A; dIG/dt=5A/us Thermal Resistances Symbol Rth j-mb Rth j-a HBT136AE Parameter Thermal resistance junction to mounting base Thermal resistance junction to ambient HSMC Product Specification HI-SINCERITY Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 3/4 MICROELECTRONICS CORP. Characteristics Curve o Typical & Maximum On-State Characteristic Normalised Gate Trigger Current IGT(Ta)/IGT(25 C), Versus Air Temperature Ta 11 10 1.0 9 0.9 8 0.8 7 o IGT/IGT(25 C) 1.1 6 IT/A 0.7 5 0.6 4 0.5 3 0.4 2 T2+/G+ T2-/G- 0.3 T2+/GT2-/G+ typ 1 125C 0 0.2 0 20 40 60 o 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 140 Ta( C) VT/V o o Normalised Gate Trigger Voltage VGT(Ta)/VGT(25 C), Versus Air Temperature Ta Normalised Holding Current IH(Ta)/IH(25 C), Versus Air Temperature Ta 1.6 3.0 1.4 2.5 1.2 2.0 o IL/IL(25 C) o VGT/VGT(25 C) 25C 1.0 1.5 1.0 0.8 0.5 0.6 T2+/G+ T2-/G0.0 0.4 -50 0 50 100 0 150 20 40 60 o 80 100 120 140 o Ta( C) Ta/( C) o Maximum On-State Dissipation, Ptot Versus Rms On-State Current, a=Conduction Angle Normalised Latching Current IL(Ta)/IL(25 C), Versus Air Temperature Ta 8 3 7 a a 2.5 6 Ptot/w 5 o IL/IL(25 C) 2 1.5 4 3 1 2 0.5 1 a=90 0 a=120 a=180 0 0 25 50 75 o Ta( C) HBT136AE 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 IT(RMS)/A HSMC Product Specification HI-SINCERITY Spec. No. : HE200101 Issued Date : 2001.07.01 Revised Date : 2002.03.27 Page No. : 4/4 MICROELECTRONICS CORP. TO-220AB Dimension A Marking: B D E C H B T 1 3 6 AE Control Code Date Code H K M I 3 G N 2 Style: Pin 1. Main terminal 1 2. Main terminal 2 3. Gate Tab connected to main terminal 2 1 Tab P O 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBT136AE HSMC Product Specification