HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002. 03.27
Page No. : 1/4
HBT136AE HSMC Produc t Specification
HBT136AE
TRIAC
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for
use in general purpose bidirectional switching and phase control
applications, where high sensitivity is required in all four quadrants.
Quick Reference Data
Symbol Parameter Max. Unit
VDRM Repetitive peak off-state voltages 600 V
IT(RMS) RMS on-state current 4 A
ITSM Non-repetitive peak on-state current 25 A
Pin Configur ation
Pin Description
1 Main terminal 1
2 Main terminal 2
3Gate
tab Main terminal 2
123
tab
Symbol
T2 T1
G
Limtiing Values
Symbol Parameter Min. Max. Units
VDRM Repetitive peak off-state voltages - 600 V
IT(RMS) RMS on-state current - 4 A
ITSM Non-repetitive peak on-state current - 25 A
I2tI
2t for fusing - 3.1 A2S
Repetitive rate of rise of on-sta te current after triggering
T2+ G+ -50A/us
T2+ G- - 50 A/us
T2- G- - 50 A/us
dIT/dt
T2- G+ - 10 A/us
IGM Peak gate current - 2 A
VGM Peak gate vo ltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power - 0.5 W
Tstg Storage Tempera ture Rang e - 150 °C
TjOperating junction temperature - 125 °C
TO-220AB
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002. 03.27
Page No. : 2/4
HBT136AE HSMC Produc t Specification
Static Characteristics (Ta=25°C)
HBT136AE
Symbol Parameter Conditions Min. Typ. Max. Unit
VD=12V, IG=0.1A, T2+ G+ - 5 10 mA
VD=12V, IG=0.1A, T2+ G- - 6 10 mA
VD=12V, IG=0.1A, T2- G- - 6 10 mA
IGT Gate Trigger Current
VD=12V, IG=0.1A, T2- G+ - 18 2 5 mA
VD=12V, IGT=0.1A, T2+ G+ - - 15 mA
VD=12V, IGT=0.1A, T2+ G- - - 20 mA
VD=12V, IGT=0.1A, T2- G- - - 15 mA
ILLatching Current
VD=12V, IGT=0.1A, T2- G+ - - 20 mA
IHHolding Current VD=12V, IGT=0.1A - 6 15 mA
VTOn-state Voltage IT=5A - 1.4 1.70 V
VGT Gate T rigg er Voltage VD=12V, IT=0.1A - 0.8 1.5 V
IDOff-state Leakage
Current VD=VDRM --200uA
Static Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
dVD/dt Critical rate of rise of
off-state voltage
VDM=67% VDRM(max);
Tj= 125°C; exponential
waveform; gate open circuit -50-V/us
tgt Gate controlled turn-
on time ITM=6A; VD=VDRM(max);
IG=0.1A; dIG/dt=5A/us -2-us
Thermal Resistances
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth j-mb Thermal re sistance junction to
mounting base
Rth j-a Thermal re sistance junction to
ambient
Full cycle
Half cycle
In free air
-
-
-
-
-
60
3.0
3.7
-
K/W
K/W
K/W
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002. 03.27
Page No. : 3/4
HBT136AE HSMC Produc t Specification
Characteristics Curve
Normalised Gate T rigger Cu rren t IGT (T a)/ IGT (25
o
C),
Versus Air T emperature T a
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140
Ta(
o
C)
IGT/IGT(25
o
C)
T2+/G+ T2+/G-
T2-/G- T2-/G+
Ty pical & Maximum On -State Characteristic
0
1
2
3
4
5
6
7
8
9
10
11
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VT/V
IT/A
typ 25ºC 125ºC
N ormal ised G a t e Trigger Voltag e VG T(Ta)/VGT(25
o
C),
Ver sus Air Temper atu re Ta
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Ta(
o
C)
VGT/VGT(25
o
C)
T2+/G+ T2-/G-
N or malised Hol din g Cur r ent IH( Ta)/IH ( 25
o
C),
Versus Air Tem per atu r e Ta
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 20 40 60 80 100 120 140
Ta/(
o
C)
IL/IL(25
o
C)
N or m a l ised Lat c hin g Cu r r ent IL( Ta)/ IL( 25
o
C),
Versus Air Tem per atu r e Ta
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
Ta(
o
C)
IL/IL(25
o
C)
Maximum On-State Dissipation, Ptot Versus Rms
On-State Curren t, a=Condu ction Angle
0
1
2
3
4
5
6
7
8
0.0 1.0 2.0 3.0 4.0 5.0
IT(RMS)/A
Ptot/w
a=90º a=120º a=180º
aa
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002. 03.27
Page No. : 4/4
HBT136AE HSMC Produc t Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing speci fication or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 All oy ; solder pl atin g
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Tai wan R.O. C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Indust ri al Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A B
E
G
IK
M
OP
3
2
1
C
N
H
D
Tab
Style: Pin 1. Main terminal 1
2. Main terminal 2
3. Gate
Tab connected to main terminal 2
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
Marking:
Date Code Control Code
HBT
136AE
