© Semiconductor Components Industries, LLC, 2015
May, 2018 Rev. 2
1Publication Order Number:
ES1JAF/D
ES1DAF, ES1JAF
Surface Mount Ultrafast
Rectifier
Features
Fast Switching Speed – Maximum Trr 35 ns
Ultra Thin Profile Maximum Height of 1.0 mm
Glass Passivated Junction
UL Flammability 94V0 Classification
MSL 1
Green Mold Compound
These Devices are PbFree, Halogen Free Free and are RoHS
Compliant
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter
Value
Unit
ES1DAF ES1JAF
VRRM Recurrent Peak Reverse Voltage 200 600 V
VRMS RMS Voltage 140 420 V
VRDC Blocking Voltage 200 600 V
IF(AV) Average Forward Current 1 A
IFSM Peak Forward Surge Current:
8.3 ms Single Half SineWave
Superimposed on Rated Load
30 A
TJOperating Junction Temperature
Range
55 to +150 °C
TSTG Storage Temperature Range 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DO214AD
(SMAF)
CASE 403AD
www.onsemi.com
MARKING DIAGRAMS
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
ES1DAF = Specific Device Code
Band Indicates Cathode
$Y&Z&3
ES1DAF
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Ultrafast Rectifier
12
Cathode Anode
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
ES1JAF = Specific Device Code
Band Indicates Cathode
$Y&Z&3
ES1JAF
ES1DAF, ES1JAF
www.onsemi.com
2
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Characteristic Value Unit
YJL Typical Thermal Characteristics, JunctiontoLead (Note 1) 24 °C/W
RqJA Typical Thermal Resistance, JunctiontoAmbient (Note 2) 150 °C/W
1. Mounted on an FR4 PCB, singlesided copper, with 48 cm2 copper pad area.
2. Mounted on an FR4 PCB, singlesided copper, mini pad.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
VFForward Voltage IF = 1 A ES1DAF 0.95 V
ES1JAF 1.70
IRReverse Current VR = VDC 1mA
trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 34 ns
CJJunction Capacitance VR = 4 V, f = 1 MHz 15 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Mark Package Shipping
ES1DAF ES1DAF DO214AD (SMAF)
(PbFree/Halogen Free)
10000 / Tape & Reel
ES1JAF ES1JAF DO214AD (SMAF)
(PbFree/Halogen Free)
10000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ES1DAF, ES1JAF
www.onsemi.com
3
TYPICAL PERFORMANCE CHARACTERISTICS
2
0.01
0.1
1
0 0.5 1 1.5
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
0 25 50 75 100 125 150
1.2
50 100 150 200 100
1
10
100
110
Figure 1. Forward Current Derating Curve
TC, Case Temperature (5C)
IF
, Forward Current (A)
VR, Reverse Bias Voltage (V)
CJ, Junction Capacitance (pF)
VR, Peak Reverse Voltage (V)
IR, Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
IR, Reverse Current (mA)
Figure 2. Typical Junction Capacitance
Figure 3. Typical Reverse Characteristics Figure 4. Typical Reverse Characteristics
20 40 60 80
100
TA = 150°C
TA = 25°C
TA = 125°C
TA = 75°C
TA = 150°C
TA = 25°C
TA = 125°C
TA = 75°C
0.1
200 V 600 V
0.01
0.1
1
0 0.2 0.4 0.6
Figure 5. Typical Forward Characteristics
VF
, Forward Voltage (V)
IF
, Forward Current (A)
VF
, Forward Voltage (V)
IF
, Forward Current (A)
Figure 6. Typical Forward Characteristics
TA = 150°C
TA = 25°C
TA = 125°C
TA = 75°C
600 V
TA = 150°C
TA = 25°C
TA = 125°C
TA = 75°C
200 V
0.8 1
SMA−FL
CASE 403AD
ISSUE O DATE 31 AUG 201
6
1.24
1.89
2.04 2.0
4
0.25
0.10
5.00
4.40
1.10
0.90
4.00
3.60
2.70
2.30
1.90
1.60
0.95
0.50
0.95
0.50
0.38 1.60
1.60
NOTES:
A. THIS PACKAGE DOES NOT CONFORM TO
ANY STANDARDS.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
LAND PATTERN RECOMMENDATION
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
http://onsemi.com
1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0 Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13439G
ON SEMICONDUCTOR STANDARD
SMA−FL
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 2
DOCUMENT NUMBER:
98AON13439G
PAGE 2 OF 2
ISSUE REVISION DATE
ORELEASED FOR PRODUCTION FROM FAIRCHILD DO214AD TO ON
SEMICONDUCTOR. REQ. BY B. NG. 31 AUG 2016
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. O Case Outline Number
:
403AD
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