© 1999
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14133EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ★ shows major revised points.
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•Super low on-state resistance:
RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 38 A)
•Low Ciss: Ciss = 6300 pF TYP.
•Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Sourc e Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) ID(DC) ±75 A
Drain Current (puls e ) Note1 ID(pulse) ±300 A
Total Power Diss i pation (TC = 25°C) PT130 W
Total Power Diss i pation (TA = 25°C) PT3.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Aval anche Current Note 2 IAS 55 A
Single Aval anche Energy Note2 EAS 302 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 0.93 °C/W
Channel to Ambient Rth(ch-A) 41.7 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3356 TO-3P
★
★
★
★
★
★
★
Data Sheet D14133EJ1V0DS00
2
2SK3356
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Sourc e On-state Resist ance RDS(on)1 VGS = 10 V, ID = 38 A6.38.0m
Ω
RDS(on)2 VGS = 4 V, ID = 38 A8.012m
Ω
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Adm i ttance | yfs |V
DS = 10 V, ID = 38 A3557S
Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V10
µ
A
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V±10
µ
A
Input Capaci tance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 6300 pF
Output Capaci tance Coss 1000 pF
Reverse Transf er Capac i tance Crss 490 pF
Turn-on Delay Time td(on) ID = 38 A, VGS(on) = 10 V, VDD = 30 V, 90 ns
Rise Time trRG = 10 Ω1100 ns
Turn-off Del ay T ime td(off) 300 ns
Fall Time tf400 ns
Total Gate Charge QGID = 75 A , VDD = 48 V, VGS = 10 V 106 nC
Gate to Source Charge QGS 20 nC
Gate to Drain Charge QGD 30 nC
Body Diode Forward Voltage VF(S-D) IF = 75 A, VGS = 0 V1.0V
Reverse Recovery Time trr IF = 75 A, VGS = 0 V, 55 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 100 nC
★
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0
V
PG.
R
G
= 25 Ω
50 Ω
D.U.T. L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG. R
G
= 10 Ω
D.U.T. R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T. R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 µs
Duty Cycle ≤ 1 %
τ
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%10
%
Data Sheet D14133EJ1V0DS00 3
2SK3356
PACKAGE DRAWING (Unit: mm)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
TO-3P (MP-88)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
123
15.7 MAX. 3.2±0.2
4.5±0.2
6.0 1.03.0±0.2 20.0±0.219 MIN.
2.2±0.2
5.45 5.45
1.0±0.2
4
4.7 MAX.
1.5
7.0
2.8±0.10.6±0.1
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3356
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M7 98. 8
