APT5018BLL(G) APT5018SLL(G) 500V 27A 0.180 *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 MOSFET BLL D3PAK (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID SLL D * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25C unless otherwise specified. APT5018BLL(G) Parameter 500 Drain-Source Voltage UNIT Volts 27 Continuous Drain Current @ TC = 25C Amps 108 1 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 300 Watts Linear Derating Factor 2.4 W/C VGSM PD TJ,TSTG -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 27 EAS Single Pulse Avalanche Energy Amps 30 1 Repetitive Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts mJ 1210 4 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 Volts 27 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 13.5A) TYP MAX 0.18 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2003 BVDSS Characteristic / Test Conditions 050-7004 Rev D Symbol APT5018BLL - SLL(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 546 Reverse Transfer Capacitance f = 1 MHz 38 VGS = 10V 58 VDD = 250V 15 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 27A @ 25C td(off) tf 4 VDD = 250V ID = 27A @ 25C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 2 INDUCTIVE SWITCHING @ 25C 216 VDD = 333V, VGS = 15V Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ID = 27A, RG = 5 6 ns 18 RG = 1.6 Fall Time nC 9 VGS = 15V Turn-off Delay Time pF 31 RESISTIVE SWITCHING Rise Time UNIT 2596 VGS = 0V 3 MAX 134 INDUCTIVE SWITCHING @ 125C J 337 VDD = 333V VGS = 15V ID = 27A, RG = 5 162 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID27A, dl S/dt = 100A/s) Q Reverse Recovery Charge (IS = -ID27A, dl S/dt = 100A/s) Peak Diode Recovery dv/ 100 (Body Diode) 1.3 (VGS = 0V, IS = -ID27A) dt MAX 27 IS rr dv/ dt TYP UNIT Amps Volts 544 ns 8 C 5 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol MIN Characteristic RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 TYP 0.42 4 Starting Tj = +25C, L = 3.32mH, RG = 25, Peak IL = 27A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID27A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.35 0.7 0.30 0.25 0.5 0.20 0.15 t1 0.3 t2 0.10 0.1 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7004 Rev D 7-2003 0.45 0.40 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-5 C/W 40 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5018BLL - SLL(G) RC MODEL Junction temp. ( "C) 0.161 0.00994F Power (Watts) 0.259 0.236F Case temperature ID, DRAIN CURRENT (AMPERES) 80 VGS=15 &10V 8V 60 7.5V 7V 40 6.5V 20 6V 5.5V VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125C 20 TJ = -55C TJ = +25C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ 13.5A GS 1.13 1.12 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT D 1.00 0.95 0.90 0.85 -50 = 13.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.05 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 7-2003 I V 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) V 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.14 050-7004 Rev D ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 APT5018BLL - SLL(G) Typical Performance Curves 20,000 10,000 OPERATION HERE LIMITED BY RDS (ON) Ciss 100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 108 100 10mS 10 I D = 27A VDS=100V 14 VDS=250V 12 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Coss Crss 1 VDS=400V 10 8 6 4 2 0 1,000 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C TJ =+25C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 50 V td(off) DD R G 50 40 = 333V = 5 T = 125C J V DD R 30 G = 333V 40 tr and tf (ns) td(on) and td(off) (ns) L = 100H = 5 T = 125C J L = 100H 20 0 td(on) 10 0 10 0 20 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 700 DD R G 600 = 5 DD I 700 20 D = 333V = 27A Eoff T = 125C J J Eon L = 100H SWITCHING ENERGY (J) SWITCHING ENERGY (J) 10 V = 333V T = 125C 500 E ON includes diode reverse recovery. 400 300 200 Eoff 100 0 0 800 V 7-2003 tr 20 10 050-7004 Rev D tf 30 L = 100H EON includes 600 diode reverse recovery. 500 Eon 400 300 200 100 0 0 10 20 30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT5018BLL-SLL(G) 10 % Gate Voltage 90% T = 125 C J Gate Voltage td(off) T = 125 C J Drain Voltage Drain Current td(on) 90% 90% tr t f 5% 5% 10% Drain Current Drain Voltage 0 10 % Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF60B IC V DD V CE G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline D PAK Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e3 100% Sn Plated 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Drain Source 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7004 Rev D 0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 7-2003 3.50 (.138) 3.81 (.150)