Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54526P and M54526FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
ÁHigh breakdown voltage (BV CEO ≥ 50V)
ÁHigh-current driving (Ic(max) = 500mA)
ÁWith clamping diodes
ÁDriving available with PMOS IC output of 8-18V
ÁW ide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54526P and M54526FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 10.5k Ω between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output tran-
sistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
The M54526FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
5K
3K
10.5K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used. Unit : Ω
The seven circuits share the COM and GND.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
→COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
16P4(P)
Package type 16P2N-A(FP)
INPUT OUTPUT
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Collector-emitter breakdown voltage
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V
V
µA
—
II
V
V
V
Parameter
—
—
—
0
8
0
50
25
0.5
Limits
min typ max
Symbol Unit
IC
0
0
—
—
400
200 mA
Symbol UnitParameter Test conditions Limits
min typ+max
50
—
—
—
—
—
—
1000
—
1.3
0.95
0.9
2.8
1.5
—
2500
—
2.4
1.6
1.5
4.1
2.4
100
—
V
mA
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
—
—12
230 —
—
Symbol UnitParameter Test conditions Limits
min typ max
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
PG
50ΩC
L
Measured device
OPEN
V
O
R
L
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
P
= 8V
P-P
(2) Input-output conditions : R
L
= 25Ω, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
“H” input voltage
“L” input voltage
VO
VIH
VIL
Output voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more than 30%
FP : no more than 25%
ICEO = 100µA
VI = 8V, IC = 400mA
VI = 8V, IC = 200mA
VI = 10V
VI = 25V
IF = 400mA
VR = 50V
VCE = 4V, IC = 350mA, Ta = 25°C
V
(BR) CEO
VF
IR
hFE
VCE (sat)
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54526FP
M54526P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
0
100
200
V
I
= 8V
Ta = –20°C
Ta = 25°C
Ta = 75°C
300
400
500
0.5 1.0 1.5 2.0
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54526P)
Duty cycle (%)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0
100
200
300
400
500 ➀
➁
➂
➃
➄
➅
➆
20 40 60 80 100
Collector current Ic (mA)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
Duty-Cycle-Collector Characteristics
(M54526P)
Duty cycle (%)
0
0
100
200
300
400
500
➀
➁
➂
➃
➄
➅
➆
20 40 60 80 100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54526FP)
Duty cycle (%)
0
0
100
200
300
400
500
➀
➁
➂
➃
➄➅
➆
20 40 60 80 100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54526FP)
Duty cycle (%)
0
0
100
200
300
400
500
➀
➁
➂
➃
➄➅
➆
20 40 60 80 100
Collector current Ic (mA)
•Ta = 75°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
10
1
10
3
V
CE
= 4V
Ta = 25°C
Ta = 75°C
Ta = –20°C
5
3
2
7
5
3
2
7
10
4
10
3
10
2
23 57 23 57
10
2
DC amplification factor h
FE
Input Characteristics
Input voltage V
I
(V)
0
1
Ta = 25°C
Ta = 75°C
Ta = –20°C
2
3
4
05 10152025
Input current I
I
(mA)
Clamping Diode Characteristics
Ta = 25°C
Ta = 75°C Ta = –20°C
Forward bias current I
F
(mA)
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
0
Ta = 75°C
Ta = 25°C
Ta = –20°C
100
200
300
400
500
01234
Forward bias voltage V
F
(V)
0
100
200
300
400
500
00.5 1.0 1.5 2.0
Collector current Ic (mA)
