APT11GF120BRDQ1(G) 1200V TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1 APT11GF120BRDQ1G* (R) *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO -2 47 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * High Freq. Switching to 20KHz * RBSOA and SCSOA Rated * Ultra Low Leakage Current G C E C * Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT11GF120BRDQ1(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 25 I C2 Continuous Collector Current @ TC = 100C 14 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 24 Switching Safe Operating Area @ TJ = 150C 24A @ 1200V Total Power Dissipation Watts 156 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 5.5 6.5 2.5 3.0 Units 1200 (VCE = VGE, I C = 350A, Tj = 25C) 4.5 Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) TYP Volts 3.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 500 2 Gate-Emitter Leakage Current (VGE = 20V) 3000 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A nA 12-2005 V(BR)CES MIN Rev A Characteristic / Test Conditions 052-6212 Symbol DYNAMIC CHARACTERISTICS Symbol APT11GF120BRDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf 40 Gate Charge 10.0 VGE = 15V 65 TJ = 150C, R G = 10, VGE = 300 TJ = +25C 285 7 VCC = 800V 5 Turn-off Delay Time VGE = 15V 115 RG = 10 46 295 I C = 8A Current Fall Time Eoff Turn-off Switching Energy J 485 Inductive Switching (125C) Current Rise Time Turn-on Switching Energy (Diode) ns 55 RG = 10 Turn-on Delay Time Turn-on Switching Energy nC 100 6 Eon2 V A 5 I C = 8A Eon1 pF 44 7 5 UNIT 35 VCC = 800V 4 MAX 10 Inductive Switching (25C) Current Fall Time Turn-off Switching Energy td(off) f = 1 MHz 15V, L = 100H,VCE = 1200V Turn-off Delay Time Eoff tr 90 VGE = 15V Turn-on Switching Energy (Diode) td(on) 620 VGE = 0V, VCE = 25V I C = 8A Current Rise Time Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN 44 55 TJ = +125C ns J 915 6 325 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RJC Junction to Case (IGBT) RJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX .80 1.18 5.9 UNIT C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6212 Rev A 12-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V TJ = -55C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25C 20 15 TJ = 125C 10 5 0 TJ = -55C 20 15 10 TJ = 25C 5 0 TJ = 125C 0 25 13V 20 12V 15 11V 10 10V 9V 8V 5 FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 25 14V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25C) 250s PULSE TEST<0.5 % DUTY CYCLE 30 0 0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 30 15V 35 25 J 10 VCE = 960V 8 6 4 2 0 10 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 5 IC = 16A 4 3 IC = 8A 2 IC = 4A 1 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature 70 80 5.0 4.5 IC = 16A 4.0 3.5 3.0 IC = 8A 2.5 IC = 4A 2.0 1.5 1.0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0.5 0 0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 35 IC, DC COLLECTOR CURRENT(A) 1.05 (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE 1.15 1.10 20 30 40 50 60 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 6 VCE = 240V VCE = 600V 12 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 8A C T = 25C 14 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 12-2005 GE Rev A V APT11GF120BRDQ1(G) 40 052-6212 30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 8 6 4 2 VCE = 800V TJ = 25C, or 125C RG = 10 L = 100H 0 12 8 6 4 VCE = 800V RG = 10 L = 100H 20 RG = 10, L = 100H, VCE = 800V TJ = 25C, VGE = 15V 60 50 40 TJ = 125C, VGE = 15V 30 20 10 2500 0 20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 800 EOFF, TURN OFF ENERGY LOSS (J) = 800V V CE = +15V V GE R = 10 G 2000 TJ = 125C 1500 1000 500 TJ = 25C 0 = 800V V CE = +15V V GE R = 10 700 G 600 TJ = 125C 500 400 TJ = 25C 300 200 100 0 20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000 2500 = 800V V CE = +15V V GE T = 125C 3500 Eon2,16A J 3000 2500 2000 1500 Eon2,8A 1000 0 Eoff,16A Eon2,4A 500 Eoff,4A Eoff,8A 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 SWITCHING ENERGY LOSSES (J) EON2, TURN ON ENERGY LOSS (J) 40 70 tf, FALL TIME (ns) tr, RISE TIME (ns) TJ = 25 or 125C,VGE = 15V 20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current SWITCHING ENERGY LOSSES (J) VGE =15V,TJ=25C 60 80 0 12-2005 VGE =15V,TJ=125C 80 90 2 Rev A 100 20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current RG = 10, L = 100H, VCE = 800V 10 120 0 20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 052-6212 APT11GF120BRDQ1(G) 140 10 = 800V V CE = +15V V GE R = 10 Eon2,16A G 2000 1500 Eon2,8A 1000 Eoff,16A Eon2,4A 500 0 Eoff,4A Eoff,8A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 1,000 IC, COLLECTOR CURRENT (A) Cies P C, CAPACITANCE ( F) 500 100 Coes 50 APT11GF120BRDQ1(G) 25 Cres 20 15 10 5 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.80 D = 0.9 0.60 0.7 0.5 0.40 Note: PDM ZJC, THERMAL IMPEDANCE (C/W) 1.00 0.3 0.20 0 t2 SINGLE PULSE 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-5 t1 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 160 0.363 0.0432 Case temperature. (C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F T = 100C C 10 5 T = 125C J D = 50 % V = 800V CE R = 4.3 1 G 0 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC 2 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 12-2005 0.00221 C Rev A 0.437 Power (watts) T = 75C 50 052-6212 RC MODEL Junction temp. (C) FMAX, OPERATING FREQUENCY (kHz) 100 APT11GF120BRDQ1(G) Gate Voltage APT15DQ120 10% TJ = 125C td(on) IC V CC tr V CE 90% 5% 10% Collector Current 5% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage td(off) TJ = 125C tf Collector Voltage 90% 10% 0 Collector Current Switching Energy 052-6212 Rev A 12-2005 Figure 23, Turn-off Switching Waveforms and Definitions TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. APT11GF120BRDQ1(G) Characteristic / Test Conditions IF(AV) Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) 15 IF(RMS) RMS Forward Current (Square wave, 50% duty) 29 IFSM Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) UNIT Amps 110 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP MAX IF = 8A 2.34 IF = 16A 2.83 IF = 8A, TJ = 125C 2.00 UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J - 21 trr Reverse Recovery Time - 240 Qrr Reverse Recovery Charge - 260 - 3 - 290 ns - 960 nC - 6 - 130 ns - 1340 nC - 19 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 800V, TC = 25C Maximum Reverse Recovery Current trr IRRM IF = 15A, diF/dt = -200A/s IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 1.00 0.7 0.80 0.60 0.5 0.40 0.3 Note: PDM t1 t2 0.20 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp. (C) 0.676 0.00147 0.504 0.0440 Power (watts) Case temperature. (C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL 12-2005 10-5 Rev A 0 SINGLE PULSE 052-6212 ZJC, THERMAL IMPEDANCE (C/W) 1.20 trr, REVERSE RECOVERY TIME (ns) TJ = 175C 50 TJ = 125C 40 TJ = 25C 30 TJ = -55C 20 10 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 0 Qrr, REVERSE RECOVERY CHARGE (nC) 2500 T = 125C J V = 800V R 30A 2000 1500 15A 1000 7.5A 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 trr 1.0 trr 0.8 Qrr CJ, JUNCTION CAPACITANCE (pF) 7.5A 150 100 25 T = 125C J V = 800V 30A R 20 15 15A 10 7.5A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 Duty cycle = 0.5 T = 175C J 30 20 15 5 0 80 12-2005 15A 200 10 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature Rev A 250 25 0.2 052-6212 30A 300 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM 0.4 70 60 50 40 30 20 10 0 R 0 Qrr 0.6 0.0 T = 125C J V = 800V 350 50 IRRM, REVERSE RECOVERY CURRENT (A) 0 APT11GF120BRDQ1(G) 400 IF(AV) (A) IF, FORWARD CURRENT (A) 60 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) Vr diF /dt Adjust +18V APT10078BLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Collector (Cathode) 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) Emitter (Anode) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 12-2005 1.65 (.065) 2.13 (.084) Rev A 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 052-6212 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123)