5-1
May 2001
CA3086
General Purpose NPN
Transistor Array
Applications
• Three Isolated Transistors and One Differentially
Connected Transistor Pair For Low-Power Applications
from DC to 120MHz
• General-Purpose Use in Signal Processing Systems
Operating in the DC to 190MHz Range
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the
CA3018 Integrated-Circuit Transistor Array” for
Suggested Applications
Description
The CA3086 consists of five general-purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a differentially
connected pair.
The transistors of the CA3086 are well suited to a wide vari-
ety of applications in low-power systems at frequencies from
DC to 120MHz. They may be used as discrete transistors in
conventional circuits. However, they also provide the very
significant inherent advantages unique to integrated circuits,
such as compactness, ease of physical handling and ther-
mal matching
Pinout
CA3086
(PDIP, SOIC)
TOP VIEW
Ordering Information
PART NUMBER
(BRAND) TEMP.
RANGE (oC) PACKAGE PKG.
NO.
CA3086 -55 to 125 14 Ld PDIP E14.3
CA3086M
(3086) -55 to 125 14 Ld SOIC M14.15
CA3086M96
(3086) -55 to 125 14 Ld SOIC Tape
and Reel M14.15
SUBSTRATE
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Q1
Q2
Q5
Q4
Q3
File Number 483.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Intersil and Design is a trademark of Intersil Americas Inc. |Copyright © Intersil Americas Inc. 2001
5-2
Absolute Maximum Ratings Thermal Information
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, VCEO.....................15V
Collector-to-Base Voltage, VCBO ......................20V
Collector-to-Substrate Voltage, VCIO (Note1)............20V
Emitter-to-Base Voltage, VEBO.........................5V
Collector Current, IC...............................50mA
Operating Conditions
TemperatureRange........................ -55
oCto125
oC
Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W)
PDIPPackage................... 180 N/A
SOICPackage................... 220 N/A
Maximum Power Dissipation (Any one transistor) . . . . . . . . 300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oCto150
oC
MaximumLeadTemperature(Soldering10s)............ 300
oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC)
ground. A suitable bypass capacitor can be used to establish a signal ground.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TA=25
oC, For Equipment Design
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector-to-Base Breakdown Voltage V(BR)CBO lC=10µA, IE=0 20 60 - V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA,I
B=0 15 24 - V
Collector-to-Substrate Breakdown Voltage V(BR)ClO IC=10µA, ICI =0 20 60 - V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 7 - V
Collector-Cutoff Current (Figure 1) ICBO VCB =10V,I
E= 0, - 0.002 100 nA
Collector-Cutoff Current (Figure 2) ICEO VCE =10V,I
B= 0, - (Figure 2) 5 µA
DC Forward-Current Transfer Ratio (Figure 3) hFE VCE =3V,I
C=1mA 40 100 -
Electrical Specifications TA=25
oC, Typical Values Intended Only for Design Guidance
PARAMETER SYMBOL TEST CONDITIONS TYPICAL
VALUES UNITS
DC Forward-Current Transfer Ratio
(Figure 3) hFE VCE =3V I
C= 10mA 100
IC=10µA54
Base-to-Emitter Voltage (Figure 4) VBE VCE =3V I
E=1mA 0.715 V
IE= 10mA 0.800 V
VBE Temperature Coefficient (Figure 5) ∆VBE/∆TV
CE =3V,l
C= 1 mA -1.9 mV/oC
Collector-to-Emitter
Saturation Voltage VCE SAT IB=1mA,I
C=10mA 0.23 V
Noise Figure (Low Frequency) NF f = 1kHz,VCE =3V,I
C=100µA,
RS=1kΩ
3.25 dB
CA3086
5-3
Low-Frequency, Small-Signal Equivalent-
Circuit Characteristics: f=1kHz,V
CE =3V,I
C=1mA
Forward Current-Transfer Ratio
(Figure 6) hFE 100 -
Short-Circuit Input Impedance
(Figure 6) hIE 3.5 kΩ
Open-Circuit Output Impedance
(Figure 6) hOE 15.6 µS
Open-Circuit Reverse-Voltage
Transfer Ratio (Figure 6) hRE 1.8 X 10-4 -
Admittance Characteristics: f = 1MHz,VCE =3V,l
C=1mA
Forward Transfer Admittance
(Figure 7) yFE 31 - j1.5 mS
Input Admittance (Figure 8) yIE 0.3 + j0.04 mS
Output Admittance (Figure 9) yOE 0.001 + j0.03 mS
Reverse Transfer Admittance
(Figure 10) yRE See Figure 10 -
Gain-Bandwidth Product (Figure 11) fTVCE =3V,I
C=3mA 550 MHz
Emitter-to-Base Capacitance CEBO VEB =3V,I
E=0 0.6 pF
Collector-to-Base Capacitance CCBO VCB =3V,I
C= 0 0.58 pF
Collector-to-Substrate Capacitance CClO VCl=3V,I
C=0 2.8 pF
Electrical Specifications TA=25
oC, Typical Values Intended Only for Design Guidance (Continued)
PARAMETER SYMBOL TEST CONDITIONS TYPICAL
VALUES UNITS
Typical Performance Curves
FIGURE 1. ICBO vs TEMPERATURE FIGURE 2. ICEO vs TEMPERATURE
102
10-1
10
1
10-2
10-3
10-4
COLLECTOR CUTOFF CURRENT (nA)
0 25 50 75 100 125
TEMPERATURE (oC)
VCB =15V
VCB = 10V
VCB =5V
IE=0
102
10-1
10
1
10-2
10-3
COLLECTOR CUTOFF CURRENT (nA)
0 25 50 75 100 125
TEMPERATURE (oC)
IB=0
VCE =10V
VCE =5V
103
CA3086
5-4
FIGURE 3. hFE vs IEFIGURE 4. VBE vs IE
FIGURE 5. VBE vs TEMPERATURE FIGURE 6. NORMALIZED hFE,h
IE,h
RE,h
OE vs IC
FIGURE 7. yFE vs FREQUENCY FIGURE 8. yIE vs FREQUENCY
Typical Performance Curves (Continued)
EMITTER CURRENT (mA)
VCE =3V
TA=25
oC
STATIC FORWARD CURRENT
TRANSFER RATIO (hFE)
120
110
100
90
80
70
60
50 0.01 0.1 1 10
hFE
0.8
0.7
0.6
0.5
0.4
BASE-TO-EMITTER VOLTAGE (V)
0.01 0.1 1.0 10
EMITTER CURRENT (mA)
VCE =3V
TA=25
oC
VBE
0.9
0.8
0.7
0.6
0.5
0.4
BASE-TO-EMITTER VOLTAGE (V)
-75 -50 -25 0 25 50 75 100 125
TEMPERATURE (oC)
VCB =3V
IE=3mA
IE=1mA
IE=0.5mA
VCE =3V
f = 1kHz
TA=25
oChOE
hFE
hRE
hIE
hFE = 100
hIE =3.5kΩ
hRE =1.88x10
-4
hOE =15.6µS
AT
1mA
hRE
hIE
100
10
1.0
0.1
NORMALIZED h PARAMETERS
0.01 0.1 1.0 10
COLLECTOR CURRENT (mA)
TA=25
oC, VCE =3V,I
C=1mA
COMMON EMITTER CIRCUIT, BASE INPUT
FORWARD TRANSFER CONDUCTANCE (gFE)
AND SUSCEPTANCE (bFE)(mS)
FREQUENCY (MHz)
0.1 10 100
-20
-10
0
10
20
30
40
gFE
bFE
1
TA=25
oC, VCE =3V,I
C=1mA
COMMON EMITTER CIRCUIT, BASE INPUT
INPUT CONDUCTANCE (gIE)
AND SUSCEPTANCE (bIE)(mS)
FREQUENCY (MHz)
0.1 10 100
0
1
2
3
4
5
6
gIE
bIE
1
CA3086
5-5
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at website www.intersil.com/design/quality/iso.asp.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights ofIntersil or its subsidiaries.
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FIGURE 9. yOE vs FREQUENCY FIGURE 10. yRE vs FREQUENCY
FIGURE 11. fTvs IC
Typical Performance Curves (Continued)
TA=25
oC, VCE =3V,I
C=1mA
COMMON EMITTER CIRCUIT, BASE INPUT
OUTPUT CONDUCTANCE (gOE)
AND SUSCEPTANCE (bOE)(mS)
FREQUENCY (MHz)
0
1
2
3
4
5
6
gOE
bOE
0.1 10 1001
TA=25
oC, VCE =3V,I
C=1mA
COMMON EMITTER CIRCUIT, BASE INPUT
REVERSE TRANSFER CONDUCTANCE (gRE)
AND SUSCEPTANCE (bRE)(mS)
FREQUENCY (MHz)
-2.0
-1.5
-1.0
-0.5
0
bRE
1 10010
gRE IS SMALL AT FREQUENCIES
LESS THAN 500MHz
800
700
600
500
400
300
200
100
1000
900
GAIN BANDWIDTH PRODUCT (MHz)
012345678910
COLLECTOR CURRENT (mA)
VCE =3V
TA=25
oC
0
CA3086
