DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor DESCRIPTION Marking code: Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. BSS83 = M74 handbook, halfpage 4 3 d APPLICATIONS b g * analog and/or digital switch * switch driver BSS83 1 s 2 Top view MAM389 PINNING 1 = substrate (b) 2 = source 3 = drain 4 = gate Fig.1 Simplified outline and symbol. Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA Drain-source voltage VDS max. 10 V Source-drain voltage VSD max. 10 V Drain-substrate voltage VDB max. 15 V Source-substrate voltage VSB max. 15 V Drain current (DC) ID max. 50 mA Total power dissipation up to Tamb = 25 C Ptot max. 230 mW Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 A VGS(th) > 0.1 V < 2.0 V RDSon < 45 Crss typ. 0.6 pF Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 0.1 mA Feed-back capacitance VGS = VBS = -15 V; VDS = 10 V; f = 1 MHz April 1991 2 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 10 V Source-drain voltage VSD max. 10 V Drain-substrate voltage VDB max. 15 V Source-substrate voltage VSB max. 15 V ID max. 50 mA Ptot max. 230 mW Drain current (DC) Total power dissipation up to Tamb = 25 C(1) -65 to + 150 C Storage temperature range Tstg Junction temperature Tj max. Rth j-a = 125 C THERMAL RESISTANCE From junction to ambient in free air(1) April 1991 3 430 K/W Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 CHARACTERISTICS Tamb = 25 C unless otherwise specified Drain-source breakdown voltage VGS = VBS = -5 V; ID = 10 nA V(BR)DSX > 10 V V(BR)SDX > 10 V V(BR)DBO > 15 V V(BR)SBO > 15 V IDSoff < 10 nA ISDoff < 10 nA > 10 mS typ. 15 mS > 0,1 V < 2,0 V Source-drain breakdown voltage VGD = VBD = -5 V; ID = 10 nA Drain-substrate breakdown voltage VGB = 0; ID = 10 nA; open source Source-substrate breakdown voltage VGB = 0; ID = 10 nA; open drain Drain-source leakage current VGS = VBS = -2 V; VDS = 6,6 V Source-drain leakage current VGD = VBD = -2 V; VSD = 6,6 V Forward transconductance at f = 1 kHz VDS = 10 V; VSB = 0; ID = 20 mA gfs Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 A VGS(th) Drain-source ON-resistance ID = 0,1 mA; VGS = 5 V; VSB = 0 RDSon < 70 VGS = 10 V; VSB = 0 RDSon < 45 VGS = 3,2 V; VSB = 6,8 V (see Fig.4) RDSon typ. 80 < 120 Gate-substrate zener voltages VDB = VSB = 0; -IG = 10 A VZ(1) > 12,5 V VDB = VSB = 0; +IG = 10 A VZ(2) > 12,5 V Feed-back capacitance Crss typ. 0,6 pF Input capacitance Ciss typ. 1,5 pF Output capacitance Coss typ. 1,0 pF ton typ. 1,0 ns toff typ. 5,0 ns Capacitances at f = 1 MHz VGS = VBS = -15 V; VDS = 10 V Switching times (see Fig.2) VDD = 10 V; Vi = 5 V Note 1. Device mounted on a ceramic substrate of 8 mm x 10 mm x 0,7 mm. April 1991 4 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 Pulse generator: Ri = 50 tr < 0,5 ns tf < 1,0 ns tp = 20 ns < 0,01 VDD 90% 90% handbook, full pagewidth 0.1 F 50 INPUT Vo 10% 630 10% tr tf ton T.U.T Vi toff 90% 90% 50 OUTPUT MBK297 10% 10% MBK296 Fig.2 Switching times test circuit and input and output waveforms. MDA250 60 VGS = 4.5 V ID (mA) MDA251 1.2 handbook, halfpage handbook, halfpage ID (mA) 4V 40 VGS = 10 V 5V 4V 3.2 V 3V 0.8 3.5 V 3V 2.5 V 20 0.4 2V 2V 0 0 0 4 8 VDS (V) 12 0 Tj = 25 C. 80 VDSon (mV) Tj = 25 C. Fig.3 VSB = 0; typical values. April 1991 40 Fig.4 VSB = 6,8 V; typical values. 5 120 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor MDA252 50 BSS83 MDA253 12 handbook, halfpage handbook, halfpage ID (mA) 40 VSB = 0 V 4 V 12 V ID (mA) 8V 8 30 20 4 10 0 0 0 1 2 3 VGS (V) 4 0 Tj = 25 C. MDA254 1.2 VGS = 10 V 5 V 4 V 3V 2V (mA) 0.8 0.4 0 20 40 60 80 100 VDSon (mV) Tj = 25 C. Fig.7 VSB = 0; typical values. April 1991 3 VGSth (V) Fig.6 VDS = VGS = VGS(th). handbook, halfpage 0 2 Tj = 25 C. Fig.5 VDS = 10 V; VBS = 0; typical values. ID 1 6 4 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B April 1991 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 8