DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 April 1991
DISCRETE SEMICONDUCTORS
BSS83
MOSFET N-channel enhancement
switching transistor
April 1991 2
Philips Semiconductors Product specification
MOSFET N-channel enhancement switching transistor BSS83
DESCRIPTION
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.
APPLICATIONS
•analog and/or digital switch
•switch driver
PINNING
Note
1. Drain and source are
interchangeable.
1 = substrate (b)
2 = source
3 = drain
4 = gate
Marking code:
BSS83 = M74
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM389
Top view
g
d
b
s
21
34
QUICK REFERENCE DATA
Drain-source voltage VDS max. 10 V
Source-drain voltage VSD max. 10 V
Drain-substrate voltage VDB max. 15 V
Source-substrate voltage VSB max. 15 V
Drain current (DC) IDmax. 50 mA
Total power dissipation up to Tamb =25°CP
tot max. 230 mW
Gate-source threshold voltage
VDS =V
GS;V
SB =0; V
GS(th) >0.1 V
ID=1µA<2.0 V
Drain-source ON-resistance
VGS = 10 V; VSB = 0; ID= 0.1 mA RDSon <45 Ω
Feed-back capacitance
VGS =V
BS =−15 V;
VDS = 10 V; f = 1 MHz Crss typ. 0.6 pF
April 1991 3
Philips Semiconductors Product specification
MOSFET N-channel enhancement switching transistor BSS83
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Drain-source voltage VDS max. 10 V
Source-drain voltage VSD max. 10 V
Drain-substrate voltage VDB max. 15 V
Source-substrate voltage VSB max. 15 V
Drain current (DC) IDmax. 50 mA
Total power dissipation up to Tamb =25°C
(1) Ptot max. 230 mW
Storage temperature range Tstg −65 to +150 °C
Junction temperature Tjmax. 125 °C
From junction to ambient in free air(1) Rth j-a = 430 K/W
April 1991 4
Philips Semiconductors Product specification
MOSFET N-channel enhancement switching transistor BSS83
CHARACTERISTICS
Tamb =25°C unless otherwise specified
Note
1. Device mounted on a ceramic substrate of 8 mm ×10 mm ×0,7 mm.
Drain-source breakdown voltage
VGS =V
BS =−5 V; ID= 10 nA V(BR)DSX >10 V
Source-drain breakdown voltage
VGD =V
BD =−5 V; ID= 10 nA V(BR)SDX >10 V
Drain-substrate breakdown voltage
VGB = 0; ID= 10 nA; open source V(BR)DBO >15 V
Source-substrate breakdown voltage
VGB = 0; ID= 10 nA; open drain V(BR)SBO >15 V
Drain-source leakage current
VGS =V
BS =−2 V; VDS = 6,6 V IDSoff <10 nA
Source-drain leakage current
VGD =V
BD =−2 V; VSD = 6,6 V ISDoff <10 nA
Forward transconductance at f = 1 kHz
VDS = 10 V; VSB = 0; ID= 20 mA gfs >10 mS
typ. 15 mS
Gate-source threshold voltage
VDS =V
GS; VSB = 0; ID= 1 µAVGS(th) >0,1 V
<2,0 V
Drain-source ON-resistance
ID= 0,1 mA;
VGS = 5 V; VSB =0 R
DSon <70 Ω
VGS = 10 V; VSB =0 R
DSon <45 Ω
VGS = 3,2 V; VSB = 6,8 V (see Fig.4) RDSon typ. 80 Ω
<120 Ω
Gate-substrate zener voltages
VDB =V
SB =0;−I
G=10µAV
Z(1) >12,5 V
VDB =V
SB =0;+I
G=10µAV
Z(2) >12,5 V
Capacitances at f = 1 MHz
VGS =V
BS =−15 V; VDS = 10 V
Feed-back capacitance Crss typ. 0,6 pF
Input capacitance Ciss typ. 1,5 pF
Output capacitance Coss typ. 1,0 pF
Switching times (see Fig.2)
VDD = 10 V; Vi=5 V t
on typ. 1,0 ns
toff typ. 5,0 ns
April 1991 5
Philips Semiconductors Product specification
MOSFET N-channel enhancement switching transistor BSS83
Pulse generator:
Ri=50Ω
t
r<0,5 ns
tf<1,0 ns
tp=20ns
δ<0,01
Fig.2 Switching times test circuit and input and output waveforms.
handbook, full pagewidth
MBK296
INPUT
OUTPUT
tr
90%
10%
10%
90%
90%
10%
90%
10%
tftoff
ton
MBK297
630 Ω
50 Ω0.1 µF
T.U.T
50 Ω
Vi
VDD Vo
Fig.3 VSB = 0; typical values.
Tj=25°C.
handbook, halfpage
04 12
60
0
20
40
ID
(mA)
VDS (V)
8
MDA250
VGS = 4.5 V
4 V
3.5 V
3 V
2.5 V
2 V
Fig.4 VSB = 6,8 V; typical values.
Tj=25°C.
handbook, halfpage
0 40 120
1.2
0
0.4
0.8
ID
(mA)
VDSon (mV)
80
MDA251
VGS = 10 V 5 V 4 V
3 V
2 V
3.2 V
April 1991 6
Philips Semiconductors Product specification
MOSFET N-channel enhancement switching transistor BSS83
Fig.5 VDS = 10 V; VBS = 0; typical values.
Tj=25°C.
handbook, halfpage
012 4
50
0
40
3
30
20
10
MDA252
ID
(mA)
VGS (V)
Fig.6 VDS =V
GS =V
GS(th).
Tj=25°C.
handbook, halfpage
0
12
8
4
01
4 V 12 V
2VGSth (V)
ID
(mA)
4
3
MDA253
VSB = 0 V 8 V
Fig.7 VSB = 0; typical values.
Tj=25°C.
handbook, halfpage
0VDSon (mV) 100
1.2
0
0.4
0.8
20 40 60 80
MDA254
ID
(mA)
VGS =
10 V 5 V 4 V 3 V 2 V
April 1991 7
Philips Semiconductors Product specification
MOSFET N-channel enhancement switching transistor BSS83
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.45
0.15 0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 97-02-28
0 1 2 mm
scale
Plastic surface mounted package; 4 leads SOT143B
D
HE
EA
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
21
34
b1
bp
April 1991 8
Philips Semiconductors Product specification
MOSFET N-channel enhancement switching transistor BSS83
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
