ZXGD3111N7 200V ACTIVE OR'ING MOSFET CONTROLLER IN SO-7 Description Features The ZXGD3111N7 is a 200V Active OR'ing MOSFET Controller designed for driving a very low RDS(ON) Power MOSFET as an ideal Active OR'ing MOSFET Controller for High- or Low-Side PSU Ideal Diode to Reduce Forward Voltage Drop -3mV Typical Turn-Off Threshold with 2mV Tolerance 200V Drain Voltage Rating 25V VCC Rating <50mW Standby Power with Quiescent Supply Current <1mA <600ns Turn-Off Time to Minimize Reverse Current Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony free. "Green" Device (Note 3) diode. This replaces the standard rectifier to reduce the forward voltage drop and overall increase the power transfer efficiency. The ZXGD3111N7 can be used on both high-side and low-side power supply units (PSU) with rails up to 200V. It enables very low RDS(ON) MOSFETs to operate as ideal diodes as the turn-off threshold is only -3mV with 2mV tolerance. In the typical 48V configuration, the standby power consumption is <50mW as the low quiescent supply current is <1mA. During PSU fault condition, the OR'ing Controller detects the power reduction and rapidly turns off the MOSFET in <600ns to block reverse current flow and avoid the common bus voltage dropping. Applications Mechanical Data Active OR'ing Controller in: (N+1) Redundant Power Supplies Telecom and Networking Data Centers and Servers Typical Configuration for Low-Side -ve Supply Rail VD Power Supply -ve Rail VS Case: SO-7 Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-7 -ve Vout GND GND GND GND VCC GND GND GATE VG DRAIN GATE GND PGND ZXGD3112 ZXGD3111 C1 Vcc GND Rail GND 7 DRAIN 3 6 PGND 4 5 PGND 1 2 Top View Top View Pin-Out Pin Functions Pin Number Pin Name 1, 2 GND 3 VCC 4 GATE 5, 6 PGND 7 DRAIN Pin Function and Description Ground Connect this pin to the MOSFET source terminal and ground reference point. Power Supply This supply pin should be closely decoupled to ground with a X7R type capacitor. Gate Drive This pin sources (ISOURCE) and sinks (ISINK) current into the MOSFET gate. If VCC > 12V, then the GATE-to-GND will clamp at 12V. The turn-on time of the MOSFET can be programmed through an external gate resistor (RG). Power Ground Connect this pin to the MOSFET source terminal and ground reference point. Drain Sense Connect this pin to the MOSFET drain terminal to detect the change in drain-source voltage. ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 1 of 10 www.diodes.com October 2018 (c) Diodes Incorporated ZXGD3111N7 Ordering Information (Note 4) Part Number ZXGD3111N7TC Notes: Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3111 13 12 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information ZXGD = Product Type Marking Code, Line 1 3111 = Product Type Marking Code, Line 2 YY = Year (ex: 18 = 2018) WW = Week (01 to 53) ZXGD 3111 YY WW Absolute Maximum Ratings (Voltage relative to GND, @TA = +25C, unless otherwise specified.) Characteristic Supply Voltage Drain Pin Voltage Gate Output Voltage Gate Driver Peak Source Current Gate Driver Peak Sink Current Symbol VCC VD VG ISOURCE ISINK Value 25 -3 to 200 -3 to VCC +3 2 5 Unit V V V A A Value 490 3.92 655 5.24 720 5.76 785 6.28 255 191 173 159 135 -50 to +150 Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 5) Power Dissipation Linear Derating Factor (Note 6) PD (Note 7) (Note 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range (Note 5) (Note 6) (Note 7) (Note 8) (Note 9) RJA RJL TJ, TSTG mW mW/C C/W C/W C ESD Ratings (Note 10) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 2,000 200 Unit V V JEDEC Class 2 B 5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except Pin 3 (VCC) and pins 5 and 6 (PGND) are both connected to separate 5mm x 5mm 1oz copper heat-sinks. 7. Same as Note 6, except both heat-sinks are 10mm x 10mm. 8. Same as Note 6, except both heat-sinks are 15mm x 15mm. 9. Thermal resistance from junction to solder-point at the end of each lead on pins 2 and 3 (GND) and pins 5 and 6 (VCC). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A11. ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 2 of 10 www.diodes.com October 2018 (c) Diodes Incorporated ZXGD3111N7 Max Power Dissipation (W) Thermal Derating Curve 0.8 15mm x 15mm 0.7 10mm x 10mm 0.6 0.5 5mm x 5mm 0.4 Minimum Layout 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 O Junction Temperature ( C) Derating Curve Electrical Characteristics Characteristic Input Supply Operating Supply Voltage Quiescent Current Gate Driver Gate Peak Source Current Gate Peak Sink Current Gate Peak Source Current (Note 11) Gate Peak Sink Current (Note 11) Detector Under DC Condition Turn-Off Threshold Voltage Gate Output Voltage Switching Performance Turn-On Propagation Delay Gate Rise Time Turn-Off Propagation Delay Gate Fall Time Note: (@VCC = 12V, TA = +25C, unless otherwise specified.) Symbol Min Typ Max Unit VCC IQ 4 -- -- 200 20 -- V A -0.6V VDRAIN 200V ISOURCE ISINK ISOURCE ISINK -- -- 1 1.8 0.66 3.3 -- -- -- -- -- -- A CL = 47nF A A VGATE = 5V and VDRAIN = -1V VGATE = 5V and VDRAIN = 1V VT -5 -3 -1 VG(OFF) -- 0.1 0.3 VG -- 9.2 -- VG(OFF) -- 0.1 0.3 VG -- 3.2 -- VG(OFF) -- 0.1 0.3 VG -- 12 -- tD(RISE) tR tD(FALL) tF -- -- -- -- 400 695 400 131 -- -- -- -- mV V ns Test Condition VG 1V VDRAIN 0mV & VCC = 12V VDRAIN = -8mV & VCC = 12V VDRAIN 0mV & VCC = 4V VDRAIN = -8mV & VCC = 4V VDRAIN 0mV & VCC = 20V VDRAIN = -8mV & VCC = 20V Load: 50nF Capacitor Connected in Parallel with 50k Resistor CL = 47nF Rise and Fall Measured 10% to 90% Refer to Application Test Circuit Below 11. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 3 of 10 www.diodes.com October 2018 (c) Diodes Incorporated ZXGD3111N7 Layout Considerations The GATE Pin should be close to the MOSFET gate to minimize trace resistance and inductance to maximize switching performance. While the VCC to GND Pin needs an X7R type capacitor closely decoupling the supply. Trace widths should be maximized in the high current paths through the MOSFET and ground return loop in order to minimize the effects of circuit resistance and inductance. The ground return loop should also be as short as possible. For thermal consideration, the main heat path is from Pin 3 (VCC), and pins 5 and 6 (PGND). For best thermal performance, the copper area connected to Pin 3 (VCC), and pins 5 and 6 (PGND) should be maximized. Active OR'ing or (N+1) Redundancy Application OR-ing Rectifier Common +ve Bus +ve Rail PSU (A) LOAD OR-ing Rectifier PSU (B) GND Critical systems require fault-tolerant power supply that can be achieved by paralleling two or more PSUs into (N+1) redundancy configuration. During normal operation, usually all PSUs equally share the load for maximum reliability. If one of the PSUs is unplugged or fails, then the other PSU fully supports the load. To avoid the faulty PSU from affecting the common bus, then an OR'ing rectifier blocks the reverse current flow into the faulty PSU. Likewise during hot-swapping, the OR'ing rectifiers isolate a PSU's discharged output capacitors from the common bus. As the load current is in the tens of amps then a standard rectifier has a significant forward voltage drop. This both wastes power and significantly drops the potential on low voltage rails. Hence, very low RDS(ON) Power MOSFETs can replace the standard rectifiers and the ZXGD3111 controls the MOSFET as an ideal diode. Functional Block Diagram The device is comprised of a differential amplifier and high current driver. The differential amplifier acts as a detector and monitors the DRAIN-toGND Pin voltage difference. When this difference is less than the threshold voltage (VT), then a positive output voltage approaching VCC is given on the GATE Pin. If VCC > 12V, then the GATE-to-GND will clamp at 12V. Conversely, when the DRAIN-to-GND Pin voltage difference is greater than VT, then GATE Pin voltage is rapidly reduced towards the GND voltage. Vcc ZXGD3111 + DRAIN - Differential amplifier Driver GATE PGND Threshold voltage GND ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 4 of 10 www.diodes.com October 2018 (c) Diodes Incorporated ZXGD3111N7 Typical Application Circuits ZXGD3111 ZXGD3111 Focus Application of the ZXGD3111 OR'ing Controller is for Redundant Low-Side -48V Power Supply Rail ZXTR2012 (HV input, 12V output regulator) is suggested to power the VCC of ZXGD3111 from high voltage rail. ZXGD3111 ZXGD3111 Example of the ZXGD3111 OR'ing Controller in a Redundant High-Side +48V Power Supply Rail with VCC Supply ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 5 of 10 www.diodes.com October 2018 (c) Diodes Incorporated ZXGD3111N7 Operation in Typical Application The ZXGD3111 operation is described step-by-step with reference to the typical application circuits and the timing diagram below: 1. The ZXGD3111 differential amplifier monitors the MOSFET's drain-source voltage (VDS). 2. At system start up, the MOSFET body diode is forced to conduct current from the input PSU to the load and VDS is approximately -0.6V as measured by the differential amplifier between DRAIN-to-GND pins. 3. As VDS < VT (threshold voltage), the differential amplifier outputs a positive voltage approaching VCC with respect to GND. This feeds the driver stage from which the GATE Pin voltage rises towards VCC. If VCC > 12V, then the GATE-to-GND will clamp at 12V. 4. The sourcing current out of the GATE Pin drives the MOSFET gate to enhance the channel and turn it on. 5. If a short condition occurs on the input PSU, it causes the MOSFET VDS to increase. 6. When VDS > VT, then the differential amplifier's output goes to GND and the driver stage rapidly pulls the GATE Pin voltage to GND, turning off the MOSFET channel. This prevents high reverse current flow from the load to the PSU which could pull down the common bus voltage causing catastrophic system failure. MOSFET Drain Voltage VDS VGND VT -0.6V VCC MOSFET Gate Voltage VGS VGND tR tD(RISE) tD(FALL) tF MOSFET Drain Current ID 0A ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 6 of 10 www.diodes.com October 2018 (c) Diodes Incorporated ZXGD3111N7 VCC = 20V VCC = 12V VCC = 10V -4 -3 -2 -1 0 VCC = 12V VCC = 10V -4 -3 -2 Transfer Characteristic Transfer Characteristic O TA = 125 C 8 O TA = 25 C O TA = 85 C 6 O TA = 150 C 4 VCC = 12V 2 50k pull down -2.5 O TA = -50 C -2.0 -1.5 -1.0 -0.5 0.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -50 -1 0 VCC = 12V VG = 1V 50k pull down 0 VD Drain Voltage (mV) 50 100 150 O Temperature ( C) Transfer Characteristic Drain Sense Voltage vs Temperature 500 VCC = 12V CL=47nF 1600 T ON = tD1 + tR 1200 T OFF = tD2 + tF 800 400 -50 Supply Current (mA) 2000 Switching Time (ns) VCC = 20V VD Drain Voltage (mV) 10 0 -3.0 20 18 16 Capacitive load and 50k pull down resistor 14 12 10 8 6 VCC = 4V 4 2 0 -10 -9 -8 -7 -6 -5 VD Drain Voltage (mV) VD Drain Voltage (mV) VG Gate Voltage (V) VG Gate Voltage (V) 20 18 16 Capacitive load only 14 12 10 8 6 VCC = 4V 4 2 0 -10 -9 -8 -7 -6 -5 (@TA = +25C, unless otherwise specified.) VG Gate Voltage (V) Typical Electrical Characteristics f=250kHz 400 VCC = 20V VCC = 10V 300 VCC = 12V 200 VCC = 4V 100 0 -25 0 25 50 75 100 125 150 Temperature ( C) Switching vs Temperature ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 0 20 40 60 80 100 Capacitance (nF) O 7 of 10 www.diodes.com Supply Current vs Capacitive Load October 2018 (c) Diodes Incorporated ZXGD3111N7 (Cont.) (@TA = +25C, unless otherwise specified.) 8 V=12V CL=47nF VD 6 50 0 4 -50 2 -100 0 -0.5 0.0 0.5 1.0 Switch Off Speed -150 2.0 1.5 T ON = tD1 + tR 600 300 T OFF = tD2 + tF 1 10 0 VD 4 -50 2 -100 0 -2 -1.0 -0.5 0.0 0.5 1.0 100 54 1.0 -150 2.0 1.5 Time (s) Switch On Speed 900 50 V=12V CL=47nF 6 Time (s) VCC=12V 1200 100 VG 8 Sink Current Time Scale (s) 53 52 51 50 -5 0.8 -4 ISINK ISOURCE 0.6 0.4 -3 -2 V=12V CL=47nF 0.2 0.0 -1 Drain Voltage (mV) 10 150 -1 0 1 2 3 4 5 Capacitance (nF) source Current Time Scale(s) Switching vs Capacitive Load Gate Drive Current 0 Gate Drive Sink Current (A) 100 VG -2 -1.0 Time (ns) 12 Gate Drive Source Current (A) Gate Voltage (V) 10 150 GateVoltage (V) 12 DrainVoltage (mV) Typical Electrical Characteristics VCC=12V Supply Current (mA) Peak Drive Current (A) 4 ISINK 2 -ISOURCE 0 1 10 100 CL=100nF CL=10nF CL=4.7nF 10 0.1 10 CL=1nF 100 1000 10000 100000 Frequency (Hz) Gate Current vs Capacitive Load Document Number DS38273 Rev. 4 - 2 VCC=12V 1 Capacitance (nF) ZXGD3111N7 CL=47nF 100 8 of 10 www.diodes.com Supply Current vs Frequency October 2018 (c) Diodes Incorporated ZXGD3111N7 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-7 E 1 b E1 9 (All sides) h A2 Q 45 7 c 4 3 e R 0.1 L A1 Gauge Plane Seating Plane SO-7 Dim Min Max Typ A2 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E1a 3.85 3.95 3.90 e - - 1.27 h - - 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm E1a D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-7 X1 C Value (in mm) 1.270 Dimensions Y1 Y C Note: X 0.802 X1 4.612 Y 1.505 Y1 6.500 X For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 9 of 10 www.diodes.com October 2018 (c) Diodes Incorporated ZXGD3111N7 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2018, Diodes Incorporated www.diodes.com ZXGD3111N7 Document Number DS38273 Rev. 4 - 2 10 of 10 www.diodes.com October 2018 (c) Diodes Incorporated