~ 298 - f| & A HE 4% (Ta=25C) = A + ME (Ta=28C) tt Vos |Ves Ip Pp lass Ipss Ves(th) [Vos= | Rps(on) Tp (on) gfs Ciss ] Coss Crss an is yg 4 a % or Vas vaso 4| Voa * /CH Y* /CH] (max) - (max) min |max (max) (min) (nin) (Cetyp) | Cetyp) | Cetyp) oe Ves Vps Ip |&typ |Vas | Ip | #typ |Vas | #typ | Ip | (max) | (max) | (max) | Vos vw) Ww) pay | a) | a | Gay 1) FCaad |) EH) GD may (CQ) EH) | DCA) FS) AD] GP) | GP) | PD |) IRF9632 SAMSUNG P} -200 1.2 -5.5 TO-220 IRF9633 SAMSUNG P} -150 1.2 5.5 T0-220 IRF9640 SAMSUNG Py ~200 0.5 -i1 TO-220 iRF9641 SAMSUNG Py -150 0.5 11 TO-220 IRF9642 SAMSUNG P| -200 0.7 -9 JO-220 IRF9643 SAMSUNG P} -150 0.7 -9 TO-220 IRFA1Z0 SAMSUNG N} 100 2.4 0.5 TO-126 IRFA1Z3 SAMSUNG N 60 3.2 0.4 10-126 SRFP120 SAMSUNG N} 100 0.27 9.2 TO-3P IRFP121 SAMSUNG N 80 0, 27 9.2 TO-3P IRFP 422 SAMSUNG N} 100 0. 38 8 TO-3P IRFP123 SAMSUNG N 80 0. 36 8 TO-3P IRFP130 SAMSUNG N} 100 0.16 14 TO-3P IRFP 134 SAMSUNG N 80 0. 16 14 TO-3P [RFP 132 SAMSUNG N} 100 0. 23 12 TO-3P IRFP133 SAMSUNG N 80 0. 23 12 TO-3P [RFP 140 SAMSUNG N}] 100 0.077 28 TO-3P IRFP141 SAMSUNG N 80 0.077 28 TO-3P fireera2 _fsamsunc |x| 100 0.1 25 10-3? IRFP143 SAMSUNG N 80 0.1 28 TO-3P IRFP150 SAMSUNG N] 100 0.055 40 TO-3P IRFP 151 SAMSUNG N 80 0.055 40 TO-3P IRFP 452 SAMSUNG N} 100 0. 08 34 TO-3P IRFP153 SAMSUNG N 80 0. 08 34 TO-3P IRFP220 SAMSUNG Ny 200 1.8 5 TO-3P IRFP221 SAMSUNG [N} 150 1.8 5 - TO-3P IRFP222 SAMSUNG N} 200 1.2 4 TO-3P IRFP223 SAMSUNG N] 150 1.2 4 TO-3P IRFP230 samsunG |n] 200 0.4 9 : TO-3P IRFP231 SAMSUNG N} 180 | 0.4 | 9 TO-3P FerRNVD UPCHENCHAMTAA sTOAZCLEERT.