JANTXV2N7218 - Omnirel - Datasheet.Live

3.1 - 1

7 03 R0

100V Thru 500V, Up to 28A, N-Channel,

MOSFET Power Transistor, Repetitive Avalanche Rated

JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,

QUALIFIED TO MIL-PRF-19500/596

.144 DIA. .050

.040

.260

.249

.685

.665 .800

.790

.545

.535

.550

.510

.045

.035

.550

.530

.150 TYP.

.005

MECHANICAL OUTLINESCHEMATIC

Pin Connection

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

123

PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25

PART NUMBER VDS, V olts R DS(on) I

D, Amps

2N7218 100 .070 28

2N7219 200 .18 18

2N7221 400 .55 10

2N7222 500 .85 8

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221

2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222

FEATURES

• Repetitive Avalanche Rating

• Isolated and Hermetically Sealed

• Low RDS(on)

• Ease of Paralleling

• Ceramic Feedthroughs

• Qualified to MIL-PRF-19500

DESCRIPTION

This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology . I t is

ideally suited for Military requirements where small size, high performance and high reliability are required, and in

applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy

pulse circuits.

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 100 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ 0.077 V GS = 10 V, I D= 20 A 3

On-State Resistance ------ 0.125 V GS = 10 V, I D= 28 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 80 V, VGS = 0V

Current ------ 250 VDS = 80 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------59nCV

GS = 10 V, I D= 28A

QGS Gate-to-Source Charge ------16nCV

DS = 50 V

QGd Gate-to-Drain (“Miller”) Charge ------ 30.7 n C See note 4

D(on) Turn-On Delay Time ------21nsV

DD = 50 V, I D= 20A, RG =9.1

rRise Time ------ 105 ns See note 4

D(off) Turn-Off Delay Time ------64ns

rFall Time ------65ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.5 V T J= 25°C, I S= 28A 3, VGS= 0 V

trr Reverse Recovery Time ------ 400 ns TJ= 25°C, I F= 28A,d i/dt<100A/µs 3

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 1.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 48 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 25V, Starting TJ= 25°C, L > 480 µH, RG = 25 , Peak I L = 28A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/596

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N7218 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 28 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 20 A

DM Pulsed Drain Current1112 A

PD@ TC= 25°C Maximum Power Dissipation 125 W

Linear Derating Factor 1.0 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 2250 4mJ

AR Avalanche Current128 4A

EAR Repetitive Avalanche Energy112.5 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300(.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221

2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 200 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ 0.18 V GS = 10 V, I D= 11 A 3

On-State Resistance ------ 0.25 V GS = 10 V, I D= 18 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 160 V, VGS = 0V

Current ------ 250 VDS = 160 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------60nCV

GS = 10 V, I D= 18A

QGS Gate-to-Source Charge ------ 10.6 n C V DS = 100 V

QGd Gate-to-Drain (“Miller”) Charge ------ 37.6 n C See note 4

D(on) Turn-On Delay Time ------20nsV

DD = 100 V, I D= 11A, RG =9.1

rRise Time ------ 105 ns See note 4

D(off) Turn-Off Delay Time ------58ns

rFall Time ------67ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.5 V T J= 25°C, I S= 18A 3, VGS= 0 V

trr Reverse Recovery Time ------ 500 ns TJ= 25°C, I F= 18A,d i/dt<100A/µs 3

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 1.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 48 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 50V, Starting TJ= 25°C, L > 2.1 mH, RG = 25 , Peak I L = 18A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/596

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N7219 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 18 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 11 A

DM Pulsed Drain Current172 A

PD@ TC= 25°C Maximum Power Dissipation 125 W

Linear Derating Factor 1.0 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 2450 4mJ

AR Avalanche Current118 4A

EAR Repetitive Avalanche Energy112.5 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300(.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221

2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 400 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ 0.55 V GS = 10 V, I D= 6.0 A 3

On-State Resistance ------ 0.70 V GS = 10 V, I D= 10 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 320 V, VGS = 0V

Current ------ 250 VDS = 320 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------65nCV

GS = 10 V, I D= 10A

QGS Gate-to-Source Charge ------10nCV

DS = 200 V

QGd Gate-to-Drain (“Miller”) Charge ------ 40.5 n C See note 4

D(on) Turn-On Delay Time ------25nsV

DD = 200 V, I D= 6A, RG = 9.1

rRise Time ------ 92 ns See note 4

D(off) Turn-Off Delay Time ------79ns

rFall Time ------58ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.5 V T J= 25°C, I S= 10A 3, VGS= 0 V

trr Reverse Recovery Time ------ 600 ns TJ= 25°C, I F= 10A,d i/dt<100A/µs 3

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 1.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 48 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 50V, Starting TJ= 25°C, L > 11.4 mH, RG = 25 , Peak IL = 10A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/596

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N7221 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 10 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 6.0 A

DM Pulsed Drain Current140 A

PD@ TC= 25°C Maximum Power Dissipation 125 W

Linear Derating Factor 1.0 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 2650 4mJ

AR Avalanche Current110 4A

EAR Repetitive Avalanche Energy112.5 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300 (.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221

2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222

Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source 500 V V GS = 0V, I D=1.0 mA,

Breakdown Voltage

RDS(on) Static Drain-to-Source ------ 0.85 V GS = 10 V, I D= 5.0 A 3

On-State Resistance ------ 0.95 V GS = 10 V, I D= 8.0 A 3

VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS

, ID= 250 µA

DSS Zero Gate Voltage Drain ------ 25 µA VDS = 400 V, VGS = 0V

Current ------ 250 VDS = 400 V, V GS = 0V, T J= 125°C

GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V

GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V

QG(on) On-state Gate Charge ------ 68.5 n C V GS = 10 V, I D= 8.0A

QGS Gate-to-Source Charge ------ 12.5 n C V DS = 250 V

QGd Gate-to-Drain (“Miller”) Charge ------ 42.4 n C See note 4

D(on) Turn-On Delay Time ------21nsV

DD = 250 V, I D= 5.0A, RG = 9.1

rRise Time ------ 73 ns See note 4

D(off) Turn-Off Delay Time ------72ns

rFall Time ------51ns

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

VSD Diode Forward Voltage ------ 1.5 V T J= 25°C, I S= 8.0A 3, VGS= 0 V

trr Reverse Recovery Time ------ 700 ns TJ= 25°C, I F= 8.0A,di/dt<100A/µs 3

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

RthJC Junction-to-Case ------ 1.0 Mounting surface flat,

RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased

RthJA Junction-to-Ambient ------ 48 Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. @VDD

= 50V, Starting TJ= 25°C, L > 20 mH, RG = 25 , Peak IL = 8A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/596

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

Parameter JANTXV, JANTX, 2N7222 Units

D @ VGS = 10V, TC= 25°C Continuous Drain Current 8.0 A

D @ VGS = 10V, TC= 100°C Continuous Drain Current 5.0 A

DM Pulsed Drain Current132 A

PD@ TC= 25°C Maximum Power Dissipation 125 W

Linear Derating Factor 1.0 W/°C

VGS Gate-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 2700 4mJ

AR Avalanche Current18.0 4A

EAR Repetitive Avalanche Energy112.5 4mJ

TJOperating Junction -55 to 150 °C

TSTG Storage Temperature Range

Lead Temperature 300(.06 from case for 10 sec) °C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221

2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222