SILICON TRANSISTOR 2SA1411 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters @ Very high DC current gain : hee = 500 to 1600 4 2,840.2 High Vego Voltage : Vepo =10 V 3 15 0.65 23.5 3 i ABSOLUTE MAXIMUM RATINGS Tt | Maximum Voltages and Current (Ta = 25 c) ~ at 2 | Collector to Base Voltage Vcso 25 V eS td Collector to Emitter Voltage Vceo 25 v a 2 L 38 Emitter to Base Voltage Veso 10 V 5 eat cd Collector Current (DC) Ic 150 mA | 3 Maximum Power Dissipation Marking Total power Dissipation a at 25 C Ambient Temperature Pr 200 mit * 38 Maximum Temperatures 7 ls Junction Temperature Tj 150 C = c oy Storage Temperature Range Tstg 55to +150 C 1. Emitter - 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (Ta = 25 C) \ CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current IcBo 100 nA Veg =25V,lp=0 Emitter Cutoff Current lEBO 100 nA Vep=-7V,ic=90 DC Current Gain heei* 500 1000 1600 Voce =5.0 V, Ic = -1.0 mA OC Current Gain hee2* 200 400 Voce = -5.0 V, Ic = 100 mA Base to Emitter Voltage VBE" 580 mV Vee = 5.0 V, Ie =-1.0 mA Collector Saturation Voltage Vee tsat) 0.15 0.30 v I = 50 mA, Ip = 5.0 mA Base Saturation Voltage VBE lsat) 08 1.2 v I = 50 mA, ig = -5.0mA Gain Bandwidth Product fr 200 MHz Vce =5.0 V, Ip = 10 mA Output Capacitance Cob 46 pF Vcp = -8.0 V, Ip = 0, f = 1.0 MHz Turn-on Time ton 0.12 ns Voc = 10 V, VBElott)S 2.7 V Storage Time tstg 0.58 a I = 50 mA Turn-off Time loff | 0.75 | | ns Ip1 = !pa = 1.0 mA * Pulsed: PW < 350 us, Duty Cycle 2 % hee Classification Making [M15 [ mis hFE1 | 500 to 1000 | 800 to 1600