1
Motorola IGBT Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
•Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
•High Speed Eoff: 150
m
J/A typical at 125°C
•High Short Circuit Capability – 10
m
s minimum
•Soft Recovery Free Wheeling Diode is included in the package
•Robust High Voltage Termination
•Robust RBSOA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter V oltage VCES 1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc
Gate–Emitter Voltage — Continuous VGE ±20 Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD125
0.98 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C
Short Circuit Withstand T ime
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)tsc 10
m
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
1.0
1.4
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL260 °C
Mounting Torque, 6–32 or M3 screw 10 lbf
S
in (1.13 N
S
m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MGW12N120D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340K–01
STYLE 4
TO–247AE
Motorola Preferred Device
GCE
C
E
G
Motorola, Inc. 1998
MGW12N120D
2Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown V oltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coef ficient (Positive)
V(BR)CES 1200
——
870 —
—
Vdc
mV/°C
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES —
——
—100
2500
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State V oltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
VCE(on) —
—
—
2.71
3.78
3.5
3.37
—
4.42
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coef ficient (Negative)
VGE(th) 4.0
—6.0
10 8.0
—
Vdc
mV/°C
Forward T ransconductance (VCE = 10 Vdc, IC = 10 Adc) gfe —12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vdc V 0 Vdc
Cies —1003 — pF
Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz
)
Coes —126 —
T ransfer Capacitance
f
=
1
.
0
MHz)
Cres —106 —
SWITCHING CHARACTERISTICS (1)
T urn–On Delay Time
(V 720 Vd I 10 Ad
td(on) —74 — ns
Rise T ime
(V 720 Vd I 10 Ad
tr— 83 —
T urn–Off Delay Time (VCC = 720 Vdc, IC = 10 Adc,
V 15 Vd L 300 H
td(off) —76 —
Fall T ime VGE = 15 Vdc, L = 300
m
H
R
G
= 20 Ω
)
tf—231 —
T urn–Off Switching Loss
RG
=
20
Ω)
Energy losses include “tail” Eoff —0.55 1.33 mJ
T urn–On Switching Loss Eon —1.21 1.88
Total Switching Loss Ets —1.76 3.21
T urn–On Delay Time
(V 720 Vd I 10 Ad
td(on) —66 — ns
Rise T ime
(V 720 Vd I 10 Ad
tr— 87 —
T urn–Off Delay Time (VCC = 720 Vdc, IC = 10 Adc,
V 15 Vd L 300 H
td(off) —120 —
Fall T ime VGE = 15 Vdc, L = 300
m
H
R
G
= 20 Ω
,
T
J
= 125°C
)
tf— 575 —
T urn–Off Switching Loss
RG
=
20
Ω
,
TJ
=
125 C)
Energy losses include “tail” Eoff —1.49 — mJ
T urn–On Switching Loss Eon —2.37 —
Total Switching Loss Ets —3.86 —
Gate Charge
(V 720 Vdc I 10 Adc
QT— 29 — nC
(VCC = 720 Vdc, IC = 10 Adc,
V
GE
= 15 Vdc
)
Q1—13 —
VGE
=
15
Vdc)
Q2— 12 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125°C)
(IEC = 10 Adc)
VFEC —
—
—
2.26
1.37
2.86
3.32
—
4.18
Vdc
(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%. (continued)
MGW12N120D
3
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
(I 10 Ad V 720 Vd
trr —116 — ns
(IF = 10 Adc, VR = 720 Vdc, ta— 69 —
(F,R,
dIF/dt = 100 A/µs) tb— 47 —
Reverse Recovery Stored Charge QRR —0.36 — µC
Reverse Recovery Time
(I 10 Ad V 720 Vd
trr — 234 — ns
(IF = 10 Adc, VR = 720 Vdc, ta— 149 —
(F,R,
dIF/dt = 100 A/µs, TJ = 125°C) tb— 85 —
Reverse Recovery Stored Charge QRR —1.40 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad) LE— 13 — nH
Figure 1. Output Characteristics Figure 2. Output Characteristics
Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
VGE = 20 V
TJ = 25
°
C
VCE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
7.5 V
30
20
08402 6
40
10
7315
V
GE = 20 V
TJ = 125
°
C
VCE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
30
20
08402 6
40
10
7315
V
CE = 10 V
250
µ
s PULSE WIDTH
TJ = 125
°
C
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
24
8
4
01597511
25
°
C
VGE = 15 V
250
µ
s PULSE WIDTH
TJ, JUNCTION TEMPERATURE (
°
C)
3.8
3.2
2150500–50
2.6
100
VCE, COLLECT OR–T O–EMITTER VOLTAGE (VOLTS)
IC = 10 A
16 7.5 A
13
5 A
12
20
2.2
2.4
2.8
3.0
3.4
3.6
–25 12525 75
MGW12N120D
4Motorola IGBT Device Data
VCE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Qg, TOTAL GATE CHARGE (nC)
C, CAPACITANCE (pF)
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 7. Turn–On Losses versus
Gate Resistance
Figure 8. Turn–On Losses versus
Case Temperature
Figure 9. Turn–On Losses versus
Collector Current
RG, GATE RESISTANCE (OHMS)
E
3
150302010 40
2.5
2
VCC = 720 V
VGE = 15 V
TJ = 125
°
CIC = 10 A
TC, CASE TEMPERATURE (
°
C)
2.6
0.2
1507525
0100
1.8
1
VCC = 720 V
VGE = 15 V
RG = 20
Ω
50 125
IC = 10 A
1.5
7.5 A
5 A
7.5 A
5 A
3
2.2
1.4
0.6
IC, COLLECTOR CURRENT (AMPS)
2.4
1.8
110975
2
1.6
VCC = 720 V
VGE = 15 V
RG = 20
Ω
TJ = 125
°
C
1.2
8
1.4
6
2.2
Coes
400
025201550
1200
10
Cres
Cies
1600 TJ = 25
°
C
VGE = 0 V
800
, TURN–ON ENERGY LOSSES (mJ)
on
E , TURN–ON ENERGY LOSSES (mJ)
on
E , TURN–ON ENERGY LOSSES (mJ)
on
16
8
03550
4
QT
TJ = 25
°
C
IC = 10 A
VGE = 15 V
3010
12
252015
Q2
Q1
MGW12N120D
5
Motorola IGBT Device Data
IC, COLLECTOR CURRENT (AMPS)
VGE = 15 V
RGE = 20
Ω
TJ = 125
°
C
Figure 10. Diode Forward Voltage Drop Figure 11. Reverse Biased
Safe Operating Area
VCE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
100
10
0.1 10,0001
1
10010
25
°
C
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
25
15
043102
20
10
5
TJ = 125
°
C
F
1000
t, TIME (s)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
0.1
0.01
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
Figure 12. Thermal Response
MGW12N120D
6Motorola IGBT Device Data
PACKAGE DIMENSIONS
CASE 340K–01
TO–247AE
ISSUE A
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
R
P
A
K
V
F
DG
UL
E
0.25 (0.010) MTBM
0.25 (0.010) MYQS
JH
C
4
123
–T–
–B–
–Y–
–Q–
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A19.7 20.3 0.776 0.799
B15.3 15.9 0.602 0.626
C4.7 5.3 0.185 0.209
D1.0 1.4 0.039 0.055
E1.27 REF 0.050 REF
F2.0 2.4 0.079 0.094
G5.5 BSC 0.216 BSC
H2.2 2.6 0.087 0.102
J0.4 0.8 0.016 0.031
K14.2 14.8 0.559 0.583
L5.5 NOM 0.217 NOM
P3.7 4.3 0.146 0.169
Q3.55 3.65 0.140 0.144
R5.0 NOM 0.197 NOM
U5.5 BSC 0.217 BSC
V3.0 3.4 0.118 0.134
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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MGW12N120D/D
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