SPECIFICATION
(Reference sheet)
·
Supplier : Samsung electro-mechanics · Samsung P/N : CL21A106KPCLQNC
·
Product : Multi-layer Ceramic Capacitor ·
Description : CAP, 10uF, 10V, ±10%, X5R, 0805
CL 21
A
106 K P C L Q N C
⑧⑨⑩⑪
Series Samsung Multi-layer Ceramic Capacitor
Size 0805 (inch code) L: 2.00 ± 0.15 ㎜ W: 1.25 ± 0.15 ㎜
Thickness division Low profile
Dielectric X5R Inner electrode
Capacitance 10 Termination
Capacitance ±10 % Plating (Pb Free)
tolerance Product Size control code
Rated Voltage 10 V Special Reserved for future use
Thickness 0.85 ± 0.10 ㎜ Packaging Cardboard Type, 7" reel
B. Structure & Dimension
CL21A106KPCLQNC 2.00 ± 0.15 1.25 ± 0.15 0.85 ± 0.10 0.50 +0.20/-0.30
A. Samsung Part Number
Ni
uF
Sn 100%
Samsung P/N
Dimension()
WLTBW
Cu
1
C. Samsung Reliablility Test and Judgement Condition
Capacitance Within specified tolerance
Tan δ (DF) 0.1 max.
Insulation 10,000Mohm or 100Mohm×Rated Voltage 60~120 sec.
Resistance Whichever is smaller
Appearance No abnormal exterior appearance Microscope (×10)
Withstanding No dielectric breakdown or of the rated voltage
Voltage mechanical breakdown
Temperature X5R
Characteristics (From-55 to 85, Capacitance change should be within ±15%)
Adhesive Strength No peeling shall be occur on the 500g·f, for 10±1 sec.
of Termination terminal electrode
Bending Strength Capacitance change : within ±12.5% Bending to the limit (1㎜)
with 1.0mm/sec.
Solderability More than 75% of terminal surface SnAg3.0Cu0.5 solder
is to be soldered newly 245±5, 3±0.3sec.
(preheating : 80~120 for 10~30sec.)
Resistance to Capacitance change : within ±7.5% Solder pot : 270±5, 10±1sec.
Soldering Heat Tan δ, IR : initial spec.
Vibration Test Capacitance change : within ± 5% Amplitude : 1.5mm
Tan δ, IR : initial spec. From 10 to 55 (return : 1min.)
2hours × 3 direction (x, y, z)
Moisture Capacitance change : within ±12.5% With rated voltage
Resistance Tan δ : 0.2 max 40±2, 90~95%RH, 500+12/-0hrs
IR : 500Mohm or 12.5Mohm ×
Whichever is smaller
High Temperature Capacitance change : within ±12.5% With of the rated voltage
Resistance Tan δ : 0.2 max Max. operating temperature
IR : 1,000Mohm or 25Mohm × 1,000+48/-0hrs
Whichever is smaller
Temperature Capacitance change : within ±7.5% 1 cycle condition
Cycling Tan δ, IR : initial spec. Min. operating temperature 25
Max. operating temperature 25
5 cycle test
The reliability test condition can be replaced by the corresponding accelerated test condition.
D. Recommended Soldering method :
Reflow ( Reflow Peak Temperature : 265, 30sec. )
Product specifications included in the specifications are effective as of March 1, 2013.
Please be advised that they are standard product specifications for reference only.
We may change, modify or discontinue the product specifications without notice at any time.
So, you need to approve the product specifications before placing an order.
Should you have any question regarding the product specifications,
please contact our sales personnel or application engineers.
250%
150%
Judgement Test condition
1 ±10% / 1.0±0.2Vrms
*A capacitor prior to measuring the capacitance is heat
treated at 150+0/-10 for 1 hour and maintained in
ambient air for 24±2 hours.
2
MLCC Pr
o
E. Recom
m
(Sub
s
Materi
a
Caution
o
duct Ma
m
ended T
strate for b
e
Si
z
a
l : Glass ep
: Copper
f
: Abnormal
i
nual
E
ST PCB
Size co
d
02
03
05
10
21
31
32
43
55
e
nding stren
z
e code
02
03
05
10
21
31
32
43
55
oxy substra
t
f
oil (T=0.03
5
i
ty can occu
( Adhesive
d
e Si
z
0.
0.
1.
0
1.
2.
0
3.
3.
4.
5.
gth test)
Size (mm)
0.4 × 0.2
0.6 × 0.3
1.0 × 0.5
1.6 × 0.8
2.0 × 1.25
3.2 × 1.6
3.2 × 2.5
4.5 × 3.2
5.7 × 5.0
t
e
T
5
)
r if lead-ba
s
strength of
z
e (mm)
.
4 × 0.2
.
6 × 0.3
0. × 0.5
.
6 × 0.8
0
× 1.25
.
2 × 1.6
.
2 × 2.5
.
5 × 3.2
.
7 × 5.0
a
0.2
0.3
0.4
1.0
1.2
2.2
2.2
3.5
4.5
T
hickness :
T
: S
o
s
ed solder (
K
d
b
termination
)
a
b
0.20 0.
1
0.30 0.
3
0.40 0.
5
1.00 1.
0
1.20 1.
4
2.20 1.
4
2.20 1.
4
3.50 1.
7
4.50 1.
7
(S
u
b c
0.6 0.
2
0.9 0.
3
1.5 0.
5
3.0 1.
2
4.0 1.
6
5.0 2.
0
5.0 2.
9
7.0 3.
7
8.0 5.
6
T
=1.6 (T=
o
lder resist
K
SD 6704)
w
)
b
c
1
70.26
3
00.30
5
50.50
0
01.20
4
01.65
4
02.00
4
02.90
7
53.70
7
55.60
u
bstrate for
R
d
2
5.0
3
5.0
5
5.0
2
5.0
6
55.0
0
5.0
9
5.0
7
5.0
6
5.0
0.8 for
0
w
ith 3% silve
r
Reliability t
e
e
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
0
3/05)
r
is used.
e
st)
e
a
c
3
MLCC Pr
o
1. Packa
g
This sp
e
When
c
1-1. Figur
1-2. Qua
n
Type
MLCC
o
duct Ma
g
ing
e
cification
a
c
ustomers r
e
e
n
tity
Size Code
Inch(mm)
0402 (01005)
0603 (0201)
1005 (0402)
1608 (0603)
2012 (0805)
3216 (1206)
3225 (1210)
4520 (1808)
4532 (1812)
5750 (2220)
nual
a
pplies to t
a
e
quire, the
s
Chip
Thickness
0.2 mm
0.3 mm
0.5 mm
0.8 mm
T≤0.85 mm
T≥1.0 mm
T≤0.85 mm
T≥1.0 mm
T≤1.6 mm
T≥2.0 mm
T≤1.6 mm
T≥2.0 mm
T≤2.0 mm
T>2.0 mm
T≥2.5 mm
a
ping of M
L
s
pecificatio
n
Taping Ty
p
PAPER
PAPER
PAPER
PAPER
PAPER
EMBOSSE
D
PAPER
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
L
CC
n
may be c
h
p
ePitch 7
2mm
2mm
2mm
4mm
4mm
D
4mm
4mm
D
4mm
D
4mm
D
4mm
D
8mm
D
8mm
D
8mm
D
8mm
D
8mm
h
anged un
d
Plastic
inches reel
20k
10K
10K
4K
4K
2K
4K
2K
2K
1K
2k
1k
-
-
-
d
er the agr
e
Plastic
10 inches reel
-
-
-
10K
10K
6K
10K
4K
4K
4K
-
-
-
-
-
e
ement.
[u
Plas
t
13 inch
e
100
K
50
K
50
K
15K /
1
15K /
1
10
K
10
K
10
K
10
K
4K
8k
4k
4K
2K
2K
nit:pcs]
t
ic
s reel
K
K
K
1
0K
1
0K
K
K
K
K
4
MLCC Product Manual
1-3. Tape Size
1-3-1. Cardboard(Paper) tape : 4mm pitch
[unit:mm]
Size
Inch(mm) A B W F E P1 P2 P0 D t
0603
(1608)
1.00
±0.10
1.90
±0.10
8.00
±0.30
3.50
±0.05
1.75
±0.10
4.00
±0.10
2.00
±0.05
4.00
±0.10
φ1.50
+0.10/-0
1.1
Below
0805
(2012)
1.55
±0.10
2.30
±0.10
1206
(3216)
2.05
±0.10
3.60
±0.10
The A, B in the table above are based on normal dimensions. The data may be changed
with the special size tolerances.
1-3-2. Cardboard(Paper) tape : 2mm pitch
[unit:mm]
Size
Inch(mm) A B W F E P1 P2 P0 D t
01005
(0402)
0.25
±0.02
0.46
±0.02
8.00
±0.30
3.50
±0.05
1.75
±0.10
2.00
±0.05
2.00
±0.05
4.00
±0.10
φ1.50
+0.10
/-0.03
0.25
±0.02
0201
(0603)
0.38
±0.03
0.68
±0.03
0.35
±0.03
0402
(1005)
0.62
±0.05
1.12
±0.05
0.60
±0.05
0204
(0510)
0.62
+0.05
/-0.10
1.12
+0.05
/-0.10
0.37
±0.03
The A, B in the table above are based on normal dimensions. The data may be changed
with the special size tolerances.
5
MLCC Product Manual
1-3-3. Embossed(Plastic) tape
[unit:mm]
Size
Inch(mm) A B W F E P1 P2 P0 D t1 t0
01005
(0402)
0.23
±0.02
0.45
±0.02
4.00
±0.05
1.80
±0.02
0.90
±0.05
1.00
±0.02
1.00
±0.02
2.00
±0.03
φ0.80
±0.04 0.35
Below
0.50
Below
015008
(05025)
0.32
±0.03
0.58
±0.03
8.00
±0.30
3.50
±0.05
1.75
±0.10
2.00
±0.05
2.00
±0.05
4.00
±0.10
φ1.50
+0.10
/-0.03
0603
(1608)
1.05
±0.15
1.90
±0.15
4.00
±0.10
φ1.50
+0.10
/-0
2.50
Below
0.60
Below
0805
(2012)
1.45
±0.20
2.30
±0.20
1206
(3216)
1.90
±0.20
3.50
±0.20
1210
(3225)
2.80
±0.20
3.60
±0.20
1808
(4520)
2.30
±0.20
4.90
±0.20
12.0
±0.30
5.60
±0.05
8.00
±0.10
3.80
Below
1812
(4532)
3.60
±0.20
4.90
±0.20
2220
(5750)
5.50
±0.20
6.20
±0.20
0204
(0510)
0.62
+0.05
/-0.10
1.12
+0.05
/-0.10 8.00
±0.30
3.50
±0.05
4.00
±0.10
2.50
Below
0306
(0816)
1.10
±0.20
1.90
±0.20
The A, B in the table above are based on normal dimensions. The data may be changed
with the special size tolerances.
6
MLCC Pr
o
1-3-4. Reel
Symbol
7”Reel
10”Reel
13”Reel
1-4. Cove
r
1-4-1. Peel
-
10 g
1-4-2. Mea
s
-Ta
p
(IE
* If t
o
duct Ma
Size
Tape Wid
t
4mm
8mm
12mm
8mm
8mm
12mm
r
tape pee
-
off force
.f peel-o
f
s
urement M
p
ing Packag
C 60286-3
P
he static el
e
nual
t
h A
φ178±2.
φ178±2.
φ178±2.
φ258±2.
φ330±2.
φ330±2.
l-off force
f
f force 7
0
ethod
ing design :
P
ackaging o
f
e
ctricity of S
M
B
0 MINφ50
0 MINφ50
0 MINφ50
0 MINφ70
0 MINφ70
0 MINφ70
0
g.f
Packaging
f
componen
M
T process
C
φ13±0.5
φ13±0.5
φ13±0.5
φ13±0.5
φ13±0.5
φ13±0.5
design follo
ts for auto
m
causes any
D
21±0.8
21±0.8
21±0.8
21±0.8
21±0.8
21±0.8
w
s IEC 602
8
m
atic handli
n
problems, p
E
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
8
6-3 standar
d
n
g - parts 3)
lease conta
c
W
5±0.5
10±1.5
13±0.5
10±1.5
10±1.5
13±0.5
d.
c
t us.
[unit:mm]
t
1.2±0.2
0.9±0.2
1.2±0.2
1.8±0.2
1.8±0.2
2.2±0.2
7
MLCC Pr
o
1-5. BOX
1-5-1. Pac
k
REE
L
Lab
e
1)
2)
3)
4)
5)
6)
1-5-2. Box
1) Dou
2) Avo
i
3) Re
m
If sp
1-5-3. 7" B
o
- Inner
- Oute
r
o
duct Ma
package
k
aging Label
L
& Box Typ
e
e
l includes t
h
Chip size
Tempe r a tur
e
Nominal C
a
Model Na
m
LOT Numb
e
Q’ty
Packaging
ble packagi
n
i
d any dam
a
m
ark informa
t
p
ecial packa
g
o
x packagin
g
r
Box (7" x 5
r
Box (7" x
2
nual
e
h
e informati
o
e
Characteri
s
a
pacitance
m
e
e
r & Reel N
u
n
g with the
a
ges during
t
ion of cont
g
ing is requi
g
REEL )
2
0 REEL)
o
n as below
.
s
tics
u
mber
paper type
o
t
ransportati
o
e
nts on inn
e
red, please
c
w
.
of inner bo
x
o
n by car, a
i
e
r box and
o
c
ontact us.
- I
-
x
and outer
b
i
rplane and
s
o
uter box
nner Box (7
"
-
Outer Box
b
ox.
s
hip.
"
x 10 REEL)
(7" x 60 RE
E
[ Unit :
m
E
L)
m
m ]
8
MLCC Product Manual
1-5-4. 13” Box packaging
- Inner Box (13" x 4 REEL) - Outer Bo
x (13" x 20 REEL)
1-6. Chip Weight
Size(L/W)
Inch(mm)
Size(T)
(mm) Temp. Weight
(mg/pc)
Size(L/W)
Inch(mm)
Size(T)
(mm) Temp. Weight
(mg/pc)
01005
(0402)
0.20 C0G 0.082 0201
(0603)
0.30 C0G 0.233
0.20 X7R 0.083 0.30 X7R 0.285
0.20 X5R 0.093 0.30 X5R 0.317
0402
(1005)
0.50 C0G 1.182 0603
(1608)
0.80 C0G 4.615
0.50 X7R 1.559 0.80 X7R 5.522
0.50 X5R 1.560 0.80 X5R 5.932
0805
(2012)
0.65 C0G 7.192 1206
(3216)
1.25 C0G 28.086
1.25 X7R 16.523 1.60 X7R 54.050
1.25 X5R 16.408 1.60 X5R 45.600
1210
(3225)
2.50 X7R 116.197 1808
(4520)
1.25 C0G 47.382
2.50 X5R 121.253 1.25 X7R 63.136
1812
(4532) 1.25 X7R 96.697 2220
(5750) 1.60 X7R 260.897
The weight of product is typical value per size, for more details, please contact us.
9
MLCC Product Manual
2. Product Characteristic data
2-1. Capacitance
The capacitance is the ratio of the change in an electric charge according to voltage change.
Due to the fact that the capacitance may be subject to change with the measured voltage and
frequency, it is highly recommended to measure the capacitance based on the following
conditions.
2-1-1. Measure capacitance with voltage and frequency specified in this document.
Regarding the voltage/frequency condition for capacitance measurement of each MLCC model,
please make sure to follow a section “C. Reliability test Condition - Capacitance” in this document.
The following table shows the voltage and frequency condition according to the capacitance
range.
[The voltage and frequency condition according to MLCC the capacitance range]
Class I
Capacitance Frequency Voltage
1,000 pF 1 MHz ± 10%
0.5 ~ 5 Vrms
> 1,000 pF 1 kHz ± 10%
Class II
Capacitance Frequency Voltage
10 1 kHz ± 10% 1.0 ± 0.2 Vrms
> 10 120 Hz ± 20% 0.5 ± 0.1 Vrms
Exception* 1 kHz ± 10% 0.5 ± 0.1 Vrms
Capacitance shall be measured after the heat treatment of 150+0/-10℃
for 1hr, leaving at room temperature for 24±2hr. (Class II)
2-1-2. It is recommended to use measurement equipment with the ALC (Auto Level Control) option.
The reason is that when capacitance or measurement frequency is high, the output voltage of
measurement equipment can be lower than the setting voltage due to the equipment limitation.
Note that when capacitance or measurement frequency is excessively high, the measurement
equipment may show ALC off warning and provide a lower output voltage than the setting
voltage even with ALC option selected. It is necessary to ensure the output voltage of
measurement equipment is the same as the setting voltage before measuring capacitance.
10
MLCC Product Manual
2-1-3. Capacitance value of high dielectric constant (Class II) MLCC changes with applied AC and DC
voltage. Therefore, it is necessary to take into account MLCC’s AC voltage characteristics and DC-
bias voltage characteristics when applying MLCC to the actual circuit.
2-1-4. The capacitance is in compliance with the EIA RS-198-1-F-2002.
2-2. Tan δ (DF)
2-2-1. An ideal MLCC’s energy loss is zero, but real MLCC has dielectric loss and resistance loss of
electrode. DF (Dissipation Factor) is defined as the ratio of loss energy to stored energy and
typically being calculated as percentage.
2-2-2. Quality factor (Q factor) is defined as the ratio of stored energy to loss energy.
The equation can be described as 1/DF. Normally the loss characteristic of Class I MLCC is
presented in Q, since the DF value is so small whereas the loss characteristic of Class II MLCC is
presented in DF.
2-2-3. It is recommended to use Class I MLCC for applications to require good linearity and low loss
such as coupling circuit, filter circuit and time constant circuit.
2-3. Insulation Resistance
Ceramic dielectric has a low leakage current with DC voltage due to the high insulating properties.
Insulation resistance is defined as the ratio of a leakage current to DC voltage.
2-3-1. When applying DC voltage to MLCC, a charging current and a leakage current flow together at
the initial stage of measurement. While the charging current decreases, and insulation resistance
(IR) in MLCC is saturated by time. Therefore, insulation resistance shall be measured 1 minute after
applying the rated voltage.
2-4. Capacitance Aging
The aging characteristic is that the high dielectric (Class II) MLCC decreases capacitance
value over time. It is also necessary to consider the aging characteristic with voltage and
temperature characteristics when Class II MLCC is used in circuitry.
11
MLCC Pr
o
2-4-1. In g
e
follo
w
diffe
2-4-2. Afte
r
sho
u
2-5. Tem
p
Pleas
e
capac
2-5-1. It is
Cha
r
[ Exam
o
duct Ma
e
neral, agin
g
w
ing graph.
rent models
r
heat treat
m
u
ld be consi
d
p
erature C
h
e
consider t
e
itance chan
g
necessary t
o
r
acteristics”
f
ple of Temp
* Sample
nual
g
causes ca
p
Please che
c
.
m
ent (150 °
C
d
ered again
h
aracterist
i
e
mperature
g
es which is
o
check the
v
f
or the tem
p
erature Cha
: 10uF, Rate
d
p
acitance to
c
k with SEM
C
C
, 1hour), th
e
from the ti
m
[ Example
* Sam
p
i
cs of Cap
a
c
haracteristi
caused by
a
v
alues speci
p
erature and
r
acteristics (
X
d
voltage 6.
3
decrease li
n
C
O for mor
e
e
capacitan
c
m
e of heat t
of Capacita
n
p
le : C0G, X
7
a
citance (
T
cs of capaci
a change in
fied in secti
o
capacitanc
e
X
5R) ]
3V *
n
early with t
h
e
details, sin
c
e decrease
d
reatment.
n
ce Aging ]
7
R, X5R
T
CC)
tance since
ceramic di
e
o
n “C. Relia
b
e
change ra
n
[ E
x
Sample : 10
h
e log of ti
m
c
e the valu
e
d
by aging i
s
the electric
a
e
lectric cons
t
b
ility test C
o
n
ge of MLC
C
x
ample of Bi
a
uF, Rated v
o
m
e as show
n
e
may vary
b
s
recovered,
a
l characteri
s
t
ant by tem
p
o
ndition–Te
m
C
.
a
s TCC ]
o
ltage 6.3V
n
in the
b
etween
so aging
s
tics such a
s
p
erature.
m
perature
s
12
MLCC Pr
o
2-5-2. Whe
tem
p
MLC
C
2-5-3. In a
d
2-6. Self-
h
It is
n
(Equi
2-6-1. Whe
or p
u
insul
2-6-2. The
circu
Ther
e
1) T
h
A
C
2) T
h
o
duct Ma
e
n selecting
p
erature an
d
C
.
d
dition, Bias
h
eating Te
n
ecessary t
o
valent Serie
s
e
n MLCC is
u
u
lse current
ating prope
reliability of
it, even the
e
fore, make
h
e surface t
e
C
or Pulse v
o
h
e rise in in
c
nual
MLCC, it is
n
d
TCC of ML
C
TCC of ML
C
mperature
o
design the
s
Resistance
)
u
sed in an A
flows throu
g
rties.
MLCC may
AC voltage
su
r
e to che
c
e
mperature
o
o
ltage is ap
p
c
rease by se
l
*
S
n
ecessary to
C
C, since th
e
C
C should b
e
system, wit
h
)
of MLCC
w
C
voltage o
r
g
h MLCC. S
h
be affected
o
the puls
e
c
k the follo
w
o
f MLCC m
u
p
lied.
l
f-heating o
f
[ Examp
S
ample : X5
R
consider t
h
e
applied te
m
e
taken into
h
considerin
w
hen AC vol
t
r
pulse volt
a
h
ort-circuit
m
by MLCC b
e
e
voltage is
w
w
ing conditi
u
st stay with
f
MLCC mus
t
le of Ripple
R
10uF, Rat
e
h
e heat char
a
m
perature
m
account wh
g self-heati
n
t
age or puls
a
ge circuit, s
e
m
ay be occ
u
e
ing used in
w
ithin the r
a
o
ns.
in the maxi
m
t
not excee
d
current ]
e
d voltage 6
.
a
cteristics o
f
m
ay change
en DC volta
n
g generate
d
e
voltage is
e
lf-heating i
u
rred by the
an AC volt
a
a
nge of rate
d
m
um operat
i
d
20℃
.
3V
f
a system,
r
the capacit
a
ge is applie
d
d
by the ES
R
applied to
M
s generated
degradatio
n
a
ge or puls
e
d voltage.
ing temper
a
oom
a
nce of
d
to MLCC.
R
M
LCC.
when AC
n
of M
L
CC’s
e
voltage
a
ture after
13
MLCC Pr
o
2-7. DC
&
It is
r
diele
c
2-7-1. Plea
s
parti
capa
char
a
2-7-2. It is
sinc
e
AC
v
o
duct Ma
&
AC Volta
g
r
equired to
c
c
tric consta
n
s
e ensure th
cular, when
citance tole
r
a
cteristics a
n
necessary t
o
e
the capaci
t
v
oltage.
nual
g
e Charac
t
c
onsider vol
t
n
t MLCC(Cla
e capacitan
c
high dielec
t
r
ance, a sys
t
n
d aging ch
a
*
o
consider t
h
t
ance value
[
E
*
S
t
eristics
t
age charac
t
ss II) is cha
n
c
e change i
s
ric constant
t
em should
b
a
racteristics
[ Example o
f
Sample : X5
h
e AC volta
g
o
f high diel
e
E
xample of
A
S
ample : X5
R
t
eristics in t
h
n
ged by ap
p
s
within the
type MLCC
b
e designe
d
of MLCC.
f DC Bias ch
a
R 10uF, Rate
g
e character
e
ctric const
a
A
C voltage
c
R
10uF, Rat
e
h
e circuit si
n
p
lied DC &
A
allowed op
e
(Class II) is
d
with consi
d
a
racteristics
]
d voltage 6.
3
istics of ML
C
a
nt type ML
C
c
haracteristi
c
e
d voltage 6
.
n
ce the capa
A
C voltage.
e
rating rang
e
used in circ
u
d
ering DC v
o
3
V
C
C and the
A
C
C (Class II)
c
s ]
.
3V
a
citance val
u
e
of a syste
m
u
it with nar
r
o
ltage, tem
p
A
C voltage
o
varies with
e of high
m
. In
r
ow allowed
p
erature
o
f a system,
the applied
14
MLCC Pr
o
2-8. Impe
Elect
r
curre
(Z=V
/
cons
i
Ther
e
MLC
C
2-8-1. MLC
incr
e
The
from
2-8-2. MLC
(Equ
i
freq
u
com
e
2-8-3. SRF
indu
c
2-8-4. The
Whe
imp
e
o
duct Ma
dance Cha
r
ical impeda
e
nt (I) when
a
/
I). Impeda
n
i
sting of the
e
fore, it is r
e
C
based on
t
C operates
a
e
ases ( X_C=
resistance (
E
m
the loss of
C operates
a
ivalent Seri
e
u
ency increa
e
s from the
(Self Reson
a
c
tive reacta
n
impedance
o
n using the
e
dance of lo
w
nual
racteristic
nce (Z) of
M
a
voltage (
V
n
ce extends
t
real part o
f
e
quired to d
e
t
he frequen
c
a
s a capacit
o
1/j2πfC ) w
h
E
SR; Equival
e
its dielectri
c
a
s an induc
t
e
s Inductanc
e
ses ( X_L=j
2
loss of its e
a
nt Frequen
c
n
ce(XL) canc
o
f MLCC ca
n
network an
a
w
capacitan
[
*
M
LCC is the
m
V
) is applied.
t
he concept
f
resistance
(
e
sign circuit
c
y ( Z = R +
o
r in the lo
w
h
ere f is fre
q
e
nt Series R
e
c
material.
t
or in the hi
g
e
). The reac
t
2
πf∙ESL ). Th
e
lectrode m
e
c
y) of MLCC
el each oth
e
n
be measu
r
a
lyzer, pleas
c
e caused b
Example of
I
*
Sample : X
5
m
easureme
n
It is define
d
of resistan
c
(
R) and the
i
with consi
d
jX )
w
frequency
q
uency and
C
e
sistance) o
f
g
h frequenc
y
t
ance (XL) o
f
e
resistance
e
tal.
is the freq
u
e
r and the i
m
r
ed by a ne
t
e note that
b
y the AC v
o
I
mpedance
c
5
R 1uF, Rate
d
n
t of the op
p
d
as the rati
o
c
e to AC ci
r
c
i
maginary p
a
d
eration of t
h
and its rea
c
C
is capacit
a
f
MLCC in t
h
y
and the i
n
f
MLCC in t
h
(ESR) of M
L
u
ency where
m
pedance
o
t
work analy
z
the small-si
g
o
ltage chara
c
c
haracteristic
s
d
voltage 6.3
p
osition tha
t
o
of the vol
t
uits and is
a
a
rt of reacta
h
e impedan
c
tance (XC)
d
a
nce.
h
e low frequ
e
ductance o
f
h
e high freq
u
L
CC in the h
i
its capaciti
v
f MLCC has
er or an im
p
g
nal input
m
c
teristic of
M
s
]
V
t
MLCC pre
s
t
age to the
c
a
complex n
a
nce (X) as
Z
c
e characte
r
d
ecreases a
s
ency mainl
y
f
MLCC is c
a
uency incre
a
igh frequen
c
v
e reactanc
e
only ESR a
t
p
edance an
a
m
a
y
lead to
M
LCC.
s
ents to a
c
urrent
umber
Z
=R+jX.
r
istics of
s
frequenc
y
comes
a
lled ESL
a
ses as
c
y mainl
y
(XC) and
SRF.
a
lyzer.
t
he
15
MLCC Pr
o
3. Electri
c
3-1. Dera
t
MLC
C
are la
derat
e
test v
o
3-1-1. The
follo
w
3-1-2. The
MLC
C
give
s
defi
n
o
duct Ma
c
al & Me
c
t
ing
C
with the te
beled as “d
e
e
d as show
n
o
ltage at 15
derated ML
C
w
ing graph.
“Temperatu
r
C including
s
the maxim
n
ed in secti
o
nual
c
hanical
C
st voltage a
t
e
rated MLC
C
n
in the foll
o
0% of the r
a
C
C should
b
r
e of MLCC”
self-heating
um operati
n
o
n “3-2. App
[Exa
m
C
aution
t
100% of t
h
C
.” For this t
y
o
wing graph
a
ted voltag
e
b
e applied w
in the x-ax
i
effect. The
n
g voltage
o
lied Voltag
e
m
ple of dera
t
* Vmax
* Only the
D
h
e rated vol
t
y
pe of MLC
C
for the equ
e
in the hig
h
w
ith the dera
i
s of the gr
a
“Voltage D
e
o
f MLCC wit
h
e
.”
ting graph
f
Derated
D
erating ma
t
age in the
h
C
, the volta
g
ivalent life t
h
temperatu
r
ting voltag
e
ph below i
n
e
rating Rati
o
h
reference
t
f
or derated
M
Voltage
rked model
s
h
igh tempe
r
g
e and tem
p
ime of a no
r
r
e resistanc
e
and tempe
dicates the
o
” in the y-a
x
t
o the maxi
m
M
LCC]
s
r
ature resist
a
p
erature sho
rmal MLCC
w
e
test.
rature as sh
surface tem
x
is of the g
r
m
um voltag
e
a
nce test
uld be
w
ith the
own in the
perature of
r
aph below
e
(Vmax) as
16
MLCC Pr
o
3-2. Appl
i
The
a
3-2-1. Cau
t
·Fo
r
n
o
· Fo
r
sh
o
· Ab
n
M
L
DC V
o
3-2-2. Effe
c
· Ele
c
th
e
· Do
w
diel
e
abo
u
· Ple
a
pr
e
(1) Surg
e
Whe
n
indu
c
elect
r
surg
e
(2) ESD
Sinc
e
com
p
o
duct Ma
i
ed Voltag
e
a
ctual appli
e
t
ions by typ
e
r
DC voltag
e
o
t exceed th
e
r
AC voltage
o
uld not ex
c
n
ormal volt
a
L
CC.
o
ltage
c
t of EOS (El
c
trical Over
s
e
electrical
s
w
n time of
M
e
ctric shock
c
u
t a failure
o
a
se use cau
t
e
paring ML
C
e
n
the overc
u
c
e the overs
r
ical short f
a
e
current int
o
(Electrostati
c
e
the voltag
e
p
ared to the
nual
e
e
d voltage
o
e
s of voltag
e
e
or DC+AC
e
rated volt
a
or pulse v
o
c
eed the rat
e
a
ge such as
[Ty
p
AC Volta
ectrical Ove
s
tress such
a
s
hort failure
M
LCC is vari
c
aused by E
o
f MLCC in a
t
ion not to
a
C
C for testin
g
u
rrent cause
d
hooting ph
e
a
ilure in ML
C
o
MLCC.
c
Discharge)
e
of the stat
surge, ESD
o
n MLCC sh
o
e
applied to
voltage, DC
a
ge of MLC
C
o
ltage, the p
e
d voltage
o
surge volta
g
p
es of Volta
g
ge D
C
r
stress)
a
s a surge v
o
caused by t
ed with the
O
S can acc
e
market at
t
a
pply excess
g
or evaluat
i
d
by surge i
s
e
nomenon
o
C
C. Therefor
e
i
c electricity
can cause
d
o
uld not ex
c
MLCC
voltage or
t
C
.
ea
k
-to-pea
k
o
f MLCC.
g
e, static el
e
g
e Applied
t
C
+AC Volta
g
o
ltage or E
O
t
he dielectri
c
applied vol
t
e
lerate heati
t
he early sta
ive electrica
i
ng.
s applied to
o
f voltage as
e
, it is nece
s
is very hig
h
d
amage to
M
c
eed the rat
e
t
he maximu
m
k
value of A
C
e
ctricity sho
u
t
o the Capa
c
g
e 1 DC+
A
O
S can caus
e
c
breakdow
n
t
age and th
e
ng on the d
ge.
l overstress
MLCC, the
shown in t
h
s
sary to be
c
h
but the qu
M
LCC with l
o
e
d voltage s
m
value of
D
C
voltage or
u
ld not exce
e
c
itor]
A
C Voltage
2
e
damages t
o
n
in MLCC.
e
room tem
p
ielectric. Th
e
including s
p
influx of cur
h
e graph be
c
areful to pr
e
antity of el
e
o
w capacita
n
s
et in the sp
e
D
C + AC vol
pulse volta
g
ed the rate
d
2
DC+Pul
o
MLCC, res
p
erature an
d
e
refore, it c
a
p
ike voltage
r
rent into M
L
e
low and res
r
event the i
n
e
ctric charge
n
ce as show
n
e
cifications.
tage should
g
e
d
voltage of
se Voltage
ulting in
d
a
a
n bring
MLCC whe
n
L
CC can
ult in the
flux of
is small
n
in the
n
17
MLCC Pr
o
follo
w
high
[ E
x
3-3. Vibr
a
Plea
s
Man
a
Whe
and
3-4. Shoc
k
Mech
a
Do n
o
When
preve
n
3-5. Piez
o
MLCC
const
a
MLCC
o
duct Ma
w
ing graph,
capacitance
x
ample of S
u
a
tion
s
e check th
e
a
ge MLCC
n
n MLCC is
u
consider sp
e
k
a
nical stress
o
t use a dro
p
n
piling up
o
nt cracks or
o
-electric P
may gener
a
a
nt MLCC (
C
may cause
nual
whereas su
r
MLCC.
u
rge applied
e
types of vi
b
n
ot to gener
a
u
sed in a vib
e
cial MLCC
s
caused by
a
p
ped MLCC
o
r handling
p
any other
d
henomen
o
a
te a noise
d
C
lass Ⅱ) at
A
a noise if
M
r
ge with lot
s
to MLCC ]
b
ration and
a
te resonan
c
ration envir
o
s
uch as Soft
-
a
drop may
to avoid an
y
p
rinted circu
d
amages to
t
o
n
d
ue to vibra
A
C or Pulse
c
M
LCC is affec
s
of electric
c
shock, and
c
e and avoi
d
o
nment, ple
a
-
term, etc.
cause dam
a
y quality an
d
it boards, d
o
t
he MLCC.
tion at spe
c
c
ircuits.
c
ted by any
c
harge qua
n
[ Example
the status o
d
any kind
o
a
se make s
u
a
ges to a di
e
d
reliability
d
o
not hit M
L
ific frequen
c
m
echanical
v
n
tity can cau
of ESD appl
* Simulati
o
f
resonance.
o
f impact to
u
re to conta
c
e
lectric or a
d
eterioratio
n
L
CC with th
e
c
y when usi
n
v
ibrations o
r
u
se damage
s
ied to MLC
C
o
n for ESD
8
.
terminals.
c
t us for th
e
crack in ML
n
.
e
corners of
n
g the high
r shocks.
s
to even
C
]
8
kV
e
situation
C
C
a PCB to
dielectric
18
MLCC Pr
o
4. Proce
s
4-1. Mou
n
4-1-1. Mou
It is
r
is a
p
4-1-2. Cau
t
Plea
s
PCB.
loca
t
4-1-3. Cau
t
If M
L
Mou
o
duct Ma
s
s of Mou
n
ting
nting positi
o
recommend
p
plied.
Not r
t
ions during
s
e take the
f
Select the
m
t
ion and a d
t
ions during
L
CC is mou
n
nt MLCC as
nual
nting an
d
o
n
ed to locat
e
ecommend
e
mounting
n
f
ollowing m
e
m
ounting lo
irection of
M
mounting
n
n
ted near a
s
far from th
e
N
d
Solderin
g
e
the major
a
e
d
n
ear the cut
o
e
asures to e
cation sho
w
M
LCC moun
t
n
ear screw
s
crew hole,
t
e
screw hol
e
N
ot recomm
g
a
xis of MLC
C
o
ut
e
ffectively re
d
w
n below, si
n
t
ed near th
e
t
he board d
e
s as possibl
m
ended
C
in parallel
Rec
o
d
uce the str
n
ce the mec
h
e
cutting lin
e
e
flection m
a
e.
Recom
m
to the direc
t
o
mmended
ess generat
e
h
anical stres
e
.
a
y be occurr
e
ended
tion in whic
e
d from the
s
s is affecte
d
r
ed by scre
w
h the stress
cutting of
d
by a
w
torque.
19