A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 35 mA 65 V
BVCES IC = 25 mA 60 V
BVEBO IE = 15 mA 4.0 V
ICES VCE = 50 V 20 mA
hFE VCE = 5.0 V IC = 1.0 A 10 200 ---
PG
η
ηη
ηC VCC = 50 V POUT = 250 W f = 1030 - 1090 MHz
PIN = 40 W
8.5
38 dB
%
Pulse Width = 20 µs, Duty Cycle = 5 %
NPN SILICON RF POWER TRANSISTOR
AVF250
DESCRIPTION:
The ASI AVF250 is a high power Class-
C transisto r designed for IFF/BME/TACAN
applications in 1025-1150 MHz range.
FEATURES:
• 50 V operation
• Internal Input/Output Matching Networks
• PG = 8.0 dB at 250 W/1090 MHz
• Omnigold™ Metalization System
• 5:1 VSWR capabilit y
MAXIMUM RATINGS
IC 20 A
VCC 50 V
PDISS 575 W @ TC = 25 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 0.28 °C/W
PACKAGE STYLE .400 2NL FLG
ORDER CODE: ASI10571
MINIMUM
inc h e s / mm
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
MAXIMUM
.396 / 10.06
.407 / 10.34
.130 / 3.30
inc h e s / mm
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C E
N
ØD
M
G
4x .062 x 45°
P
L K
I
J
2X B .025 x 45°
A
N
M.118 / 3.00 .131 / 3.33
.020 / 0.51 .030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03 .415 / 10.54
.072 / 1.83.052 / 1.32
P .230 / 5.84