2N7000 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0. 5 0. 4 0. 5 0. 4 1 FEATURES * V(BR)DSS = 60V 5 4. 0 * RDS(ON) = 5W 6. 2 4 .0 0. 4 * ID = 1A TO92 PACKAGE PIN 1 - Drain PIN 2 - Gate PIN 3 - Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated) VDS Drain - Source Voltage 60V VGS Gate - Source Voltage 40V ID Drain Current 200mA IDM Pulsed Drain Current 500mA PD Power Dissipation @ TCASE = 25C Derate above 25C Tj,Tstg Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purposes, 400mW 3.2mW/C -55 to 150C 300C 1/16 from case for 10 seconds Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/99 2N7000 ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter Test Conditions STATIC CHARACTERISTICS Min. V(BR)DSS Gate - Source Breakdown Voltage VGS = 0V ID = 10mA 60 VGS(th) Gate Threshold Voltage VDS = VGS ID = 1mA 0.8 IGSS Gate - Body Leakage Current Forward VGSF = 15V IDSS Zero Gate Voltage Drain Current ID(on)* On-State Drain Current RDS(on)* Drain - Source On Resistance VDS(on)* Drain - Source On Voltage gFS* Forward Transconductance VDS = 48V VGS = 4.5 Typ. Max. 3.0 Unit V VDS = 0V -10 VGS = 0V 1 mA TJ = 125C 1 mA VDS = 10V 75 nA mA VGS = 10V 5 W ID = 0.5A TCASE = 125C VGS = 10V ID = 0.5A 2.5 VGS = 4.5V ID = 75mA 0.4 VGS = 10V ID = 200mA 9 100 V mmhos DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 25V 60 Coss Output Capacitance VGS = 0V 25 Crss Reverse Transfer Capacitance f = 1MHz 5 pF SWITCHING CHARACTERISTICS tON Turn-On Time tOFF Turn-Off Time VDD = 15V RG = 25W RL = 25W 10 ID = 600mA 10 ns * Pulse Test: PW = 300 ms , d 2% THERMAL CHARACTERISTIC RqJA Thermal Resistance, Junction to Ambient Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Min. Typ. Max. Unit 312.5 C/W Prelim. 9/99