New products
FMM5522GJ (3W)
FMM5048GJ (4W)
53
FIND Vol.20
No.12002
Power Amplifier MMIC Models
for 14 GHz-band VSAT
FMM5522GJ(3W)
/
FMM5048GJ(4W)
FUJITSU QUANTUM DEVICES LIMITED has developed a pair of
power amplifiers (3W and 4W) for 14 GHz-band VSAT.
The higher output, reduced size, and lower prices of these new models make
them ideal as power or driver amplifiers for VSAT systems.
Product Description
With the rapid growth of the Internet, much attention has
been focused on the 14GHz-band VSAT system. VSAT
stands for "V
＿
ery S
＿
mall A
＿
perture T
＿erminal"―a very small
satellite-based communications ground station. As the
VSAT system is equipped with antennae with much smaller
apertures, it is much better suited for consumer use. As the
manufacturers are targeting a consumer market in the
development of the VSAT system, they require an ODU
(O
＿ut D
＿oor U
＿nit) with a compacter design, higher output,
reduced distortion characteristics, and a lower cost. To
construct such a system, a compact, inexpensive amplifying
unit with high power output will be required. FUJITSU has
already responded to this demand by developing the compact
3W and 4W MMIC (M
＿icrowave M
＿onolithic I
＿
ntegrated
C
＿
ircuit) modules featuring combined MMIC and hybrid
circuits.
Product Features
■ Higher output, Higher gain, and Higher efficiency
Thanks to the hybrid design of the combined MMIC
configuration in the driver stage, FET in the power stage, and
optimal circuits, these products perform better than ever (increased
output, gain and efficiency) and come in even smaller packages.
FMM5522GJ (3W)
Performance characteristics at frequency f
＝
14.0 to 14.5GHz:
●Small-signal gain GL＝23.0dB
●1dB gain compression power P1dB＝33.5dBm or more
●Saturation power Psat＝35.5dBm
FMM5048GJ (4W)
Performance characteristics at frequency f=13.75 to 14.5GHz:
●Small-signal gain GL＝23.0dB
●1dB gain compression power P1dB＝35.0dBm or more
●Saturation power Psat＝36.5dBm
●power added efficiencyη
add＝20% or more
Photo 1 External View
New products
FMM5522GJ (3W)
FMM5048GJ (4W)
54 FIND Vol.20 No.1 2002
These device frequency characteristics are compatible with
the satellite communications system (SATCOM). The drain
voltage and gate voltage are the same for both models: drain
voltage VDD＝10V and gate voltage VGG＝−5V (Class A
operation).
■ Higher reliability
The adoption of hermetic package and Au gate array chip
assures higher reliability.
■ Compact size
●Size: 15mm×12mm
●Height: 3.5mm
4−R1.2±0.15 3.5(Max.)
1.3±0.15
6−0.08
0.9
1：VDD
2：RFin
3：VGG
4：VGG
5：RFout
6：VDD
7：GND（Body）
Unit：mm
15
11±0.15
7
3.8
0.3
3
2
1
INDEX
1(Min.) 12±0.15
6±0.15
4
5
6
7
Figure 1 Dimensional Outline
Model
Parameter TestConditionSymbol
Frequencyrange ──
VDD＝10V
VGG＝−5.0V
f
FMM5522GJ FMM5048GJ
Specifications Specifications Unit
Max.Typ.Min.Max.Typ.Min.
──
GHz──13.75 14.514.5
──
──14.0
Powerat1dBgain
compression P1dB dBm36.035.035.033.5
Gainat1dBgain
compression G1dB dB26.023.026.023.0
Gainflatness ⊿G ±1.5 dB────
── ──
InputVSWR VSWRｉ 8.0 ──
6.08.06.0
OutputVSWR VSWRo 11.09.5
11.09.5
Draincurrent IDD 2.5 A2.1
2.01.75
Gatecurrent IGG 12.0 mA6.0
25.022.0
Table 1 Principal Characteristics
Fig.1 shows the dimensional outlines. The same package
design is used for both the FMM5522GJ and FMM5048GJ.
■ Characteristics
Table 1 summarizes the principal characteristics of the
FMM5522GJ and FMM5048GJ. Fig.2,3 and Fig.4,5
summarize the frequency characteristics and I/O
characteristics for the FMM5522GJ and FMM5048GJ,
respectively.
The FMM5048GJ provides broader frequency
characteristics of f＝13.75 to 14.5GHz with P1dB＝35.0dBm
or more. ✱
New products
FMM5522GJ (3W)
FMM5048GJ (4W)
55
FIND Vol.20
No.12002
1dBcomp.
VDD＝10V，IDD＝2.1A，VGG＝−5.0V
Pin＝10dBm
Pin＝7.0dBm
Pin＝6.0dBm
Pin＝4.0dBm
Pin＝2.0dBm
Pin＝0dBm
38
36
34
32
30
28
26
13.5 13.75 14 14.25 14.5 14.75
Frequency（GHz）
OutputPower（dBm）
Figure 4 Frequency Characteristics (FMM5048GJ)
VDD＝10V，IDD＝1.75A，VGG＝−5.0V，f＝14.25GHz
38
37
36
35
34
33
32
31
30
29
28
27
26
80
70
60
50
40
30
20
10
0
−4 −2 0 2 4 6 8
InputPower（dBm）
OutputPower（dBm）
ηadd（％）
Pout
ηadd
Figure 3 I/O Characteristics (FMM5522GJ)
VDD＝10V，IDD＝2.1A，VGG＝−5.0V，f＝14.25GHz
37
36
35
34
33
32
31
30
29
28
27
26
25
60
55
50
45
40
35
30
25
20
15
10
5
0
−2 0 2 4 6 8 10 12
InputPower（dBm）
OutputPower（dBm）
ηadd（％）
Pout
ηadd
Figure 5 I/O Characteristics (FMM5048GJ)
VDD＝10V，IDD＝1.75A，VGG＝−5.0V
Pin＝7dBm
Pin＝5dBm
Pin＝3dBm
Pin＝1dBm
Pin＝−3dBm
1dBcomp.
38
36
34
32
30
28
26
13.9 14 14.1 14.2 14.3 14.4 14.5 14.6
Frequency（GHz）
OutputPower（dBm）
Figure 2 Frequency Characteristics (FMM5522GJ)