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1
BAS70...
HiRel Silicon Schottky Diode
• HiRel Discrete and Microwave Semiconductor
• General-purpose diodes for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Hermetically sealed microwaver package
• esa Space Qualified
ESA/SCC Detail Spec. No.: 5512/020
Type Variante No. 01
BAS70-T1
12
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration Marking
BAS70-T1 T1 single -
(ql) Testing level: P: Professional testing
H: High Rel quality
S: Space quality
ES: ESA qualified
Maximum Ratings
Parameter Symbol Value Unit
Reverse voltage VR70 V
Forward current IF70 mA
Surge forward current1) IFSM 85 mA
Total power dissipation2) Ptot 250 mW
Operating temperature range To
p
-55 ... 150 °C
Soldering temperature3) Tsol 250 °C
Storage temperature Tst
g
-55 ... 150 °C
1t≤10ms, duty Cycle =10%
2At TCASE = 125°C. For TCASE > 125°C derating is required
3During 5 sec. maximum. The terminal shall not be resoldered until 3 minutes have elapsed.
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BAS70...
Thermal Resistance
Parameter Symbol Value Unit
Thermal resistance junction-case Rth
(j
-c
)
100 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current 1
VR1 = 70 V IR1 - - 2 µA
Reverse current 2
VR2 = 56 V IR2 - - 0.1
Forward Voltage 1 VF1
0.3
0.6
0.8
0.38
0.7
0.85
0.44
0.78
1
V
Forward Voltage 2
IF2 = 10 mA VF1
0.3
0.6
0.8
0.38
0.7
0.85
0.44
0.78
1
Differential Forward Resistance1)
IF2 = 10 mA, IF3 = 15 mA RFD 24 30 32 Ω
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz CT1.2 1.5 2 pF
1 ∆ VF
RFD=---------------------
5x10-3A
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BAS70...
T1 Package
2007-08-20
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BAS70...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
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Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
