SILICON PNP TRANSISTOR 2N3963 * General Purpose PNP Silicon Transistor * Low Power Amplifier Applications * Hermetic TO18 Package * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC PD Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Power Dissipation at -80V -80V -6V -200mA 0.36W 2.06mW/C 1.2W 6.86mW/C -65 to +200C -65 to +200C TA = 25C Derate Above 25C TC = 25C Derate Above 25C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RJA RJC Min. Typ. Max. Unit Thermal Resistance, Junction To Ambient 486 C/W Thermal Resistance, Junction To Case 146 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8779 Issue 1 Page 1 of 1 SILICON PNP TRANSISTOR 2N3963 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CBO IC = -10A -80 V IC = -5mA -80 V IC = -10A -80 V V(BR)EBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter - Base Breakdown Voltage IE = -10A -6 V ICBO Collector Cut-Off Current VCB = -70V -10 ICES Collector Cut-Off Current VCE = -70V -10 IEBO Emitter Cut-Off Current VEB = -4V -10 V(BR)CEO V(BR)CES IC = -10A hFE DC Current Gain Min. VCE = -5V 100 -55C 40 IC = -100A VCE = -5V 100 IC = -1.0mA VCE = -5V 100 Typ. 100C IC = -50mA (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) Max. Unit nA 300 450 600 VCE = -5V 90 -55C 45 IC = -10mA IB = -0.5mA -0.25 IC = -50mA IB = -5.0mA -0.4 IC = -10mA IB = -0.5mA -0.9 IC = -50mA IB = -5.0mA -0.95 IC = 1.0mA VCE = -5.0V V DYNAMIC CHARACTERISTICS hfe Small-Signal Current Gain |hfe| Magnitude of Forward Current Transfer Ratio, Common-Emitter f = 20MHz Cobo Output Capacitance VCB = -5.0V f = 1.0MHz 6 pF Cibo Input Capacitance VEB = -0.5V f = 1.0MHz 15 pF f = 1.0KHz IC = -0.5mA VCE = -5.0V 100 550 2.0 8.0 Notes (1) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8779 Issue 1 Page 2 of 3 SILICON PNP TRANSISTOR 2N3963 MECHANICAL DATA Dimensions in mm (inches) TO18 (TO-206AA) METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com PIN 3 - Collector Website: http://www.semelab-tt.com Document Number 8779 Issue 1 Page 3 of 3