SILICON PNP TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8779
Issue 1
Page 1 of 1
2N3963
• General Purpose PNP Silicon Transistor
• Low Power Amplifier Applications
• Hermetic TO18 Package
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage -80V
VCEO Collector – Emitter Voltage -80V
VEBO Emitter – Base Voltage -6V
IC Continuous Collector Current -200mA
PD Total Power Dissipation at TA = 25°C 0.36W
Derate Above 25°C 2.06mW/°C
TC = 25°C 1.2W
Derate Above 25°C 6.86mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min.
Typ. Max.
Unit
RθJA Thermal Resistance, Junction To Ambient 486 °C/W
RθJC
Thermal Resistance, Junction To Case 146 °C/W
SILICON PNP TRANSISTOR
2N3963
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8779
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Unit
V(BR)CBO Collector-Base
Breakdown Voltage IC = -10µA -80 V
V(BR)CEO Collector-Emitter
Breakdown Voltage IC = -5mA -80 V
V(BR)CES Collector-Emitter
Breakdown Voltage IC = -10µA -80 V
V(BR)EBO Emitter - Base
Breakdown Voltage IE = -10µA -6 V
ICBO Collector Cut-Off Current VCB = -70V -10
ICES Collector Cut-Off Current VCE = -70V -10
IEBO Emitter Cut-Off Current VEB = -4V -10
nA
IC = -10µA VCE = -5V 100 300
-55°C 40
IC = -100µA VCE = -5V 100
IC = -1.0mA VCE = -5V 100 450
100°C 600
IC = -50mA
(1)
VCE = -5V 90
hFE DC Current Gain
-55°C 45
IC = -10mA IB = -0.5mA -0.25
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage IC = -50mA IB = -5.0mA -0.4
IC = -10mA IB = -0.5mA -0.9
VBE(sat)
(1)
Base-Emitter
Saturation Voltage IC = -50mA IB = -5.0mA -0.95
V
DYNAMIC CHARACTERISTICS
IC = 1.0mA VCE = -5.0V
hfe Small-Signal Current Gain f = 1.0KHz 100 550
IC = -0.5mA VCE = -5.0V
|hfe|
Magnitude of Forward Current
Transfer Ratio,
Common-Emitter f = 20MHz 2.0 8.0
Cobo Output Capacitance VCB = -5.0V f = 1.0MHz 6 pF
Cibo Input Capacitance VEB = -0.5V f = 1.0MHz 15 pF
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON PNP TRANSISTOR
2N3963
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8779
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO18 (TO
-
206AA) METAL PACKAGE
Underside View
Underside ViewUnderside View
Underside View
PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector
