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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 1
AMPLIFIERS - LINEAR & POWER - SMT
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
General Description
Features
Functional Diagram
The HMC409LP4 & HMC409LP4E are high efficiency
GaAs InGaP HBT MMIC Power ampliers operating
from 3.3 to 3.8 GHz. The amplier is packaged in a
low cost, leadless SMT package. Utilizing a minimum
of external components the amplier provides 31 dB
of gain and +32.5 dBm of saturated power from a
+5V supply voltage. The power control (Vpd) can be
used for full power down or RF output power/current
control. For +22 dBm OFDM output power (64 QAM,
54 Mbps), the HMC409LP4 & HMC409LP4E achieve
an error vector magnitude (EVM) of 2%, meeting
WiMAX 802.16 linearity requirements.
Gain: 31 dB
40% PAE @ +32.5 dBm pout
2% EVM @ Pout = +22 dBm
with 54Mbps OFDM Signal
+46 dBm Output IP3
Integrated Power Control (Vpd)
Single +5V Supply
Electrical Specications, TA = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V
Typical Applications
This amplier is ideal for use as a power
amplier for 3.3 - 3.8 GHz applications:
• WiMAX 802.16
• Fixed Wireless Access
• Wireless Local Loop
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 3.3 - 3.4 3.4 - 3.6 3.6 - 3.8 GHz
Gain 30 32 29 31.5 28 30 dB
Gain Variation Over Temperature 0.04 0.05 0.04 0.05 0.035 0.045 dB/ °C
Input Return Loss 10 15 15 dB
Output Return Loss 13 14 10 dB
Output Power for 1dB Compression (P1dB) 28 30 28 30.5 28 30.5 dBm
Saturated Output Power (Psat) 32 32.5 32 dBm
Output Third Order Intercept (IP3) [2] 41 45 42 45.5 41 45 dBm
Error Vector Magnitude @ 3.5 GHz
(54 Mbps OFDM Signal @ +22 dBm Pout) 2 %
Noise Figure 5.8 5.8 6 dB
Supply Current (Icq) Vs= Vcc1 + Vcc2= +5V 615 615 615 mA
Control Current (Ipd) Vpd = +5V 4 4 4 mA
Switching Speed tOn, tOff 20 20 20 ns
Bias Current (Ibias) 10 10 10 mA
Note 1: Specications and data reect HMC409LP4 measured using the application circuit found herein. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 2
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
2 2.5 3 3.5 4 4.5 5
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
20
23
26
29
32
35
38
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 3
AMPLIFIERS - LINEAR & POWER - SMT
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature Power Compression @ 3.5 GHz
Gain & Power vs. Supply Voltage Noise Figure vs. Temperature
22
24
26
28
30
32
34
36
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
34
36
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4
+25 C
+85 C
-40 C
PSAT (dBm)
FREQUENCY (GHz)
30
34
38
42
46
50
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
-20 -16 -12 -8 -4 0 4 8
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
28
29
30
31
32
33
34
35
4.75 5 5.25
Gain
Psat
P1dB
GAIN (dB), P1dB (dBm), Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
0
2
4
6
8
10
12
3 3.2 3.4 3.6 3.8 4
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 4
Gain, Power & Quiescent
Supply Current vs. Vpd @ 3.5 GHz
0
5
10
15
20
25
30
35
40
0
100
200
300
400
500
600
700
800
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5
Gain
Psat
P1dB
Icc
GAIN (dB), P1dB (dBm), Psat (dBm)
Icc (mA)
Vpd (Vdc)
2
2.4
2.8
3.2
3.6
4
4.4
-20 -16 -12 -8 -4 0 4 8
POWER DISSIPATION (W)
INPUT POWER (dBm)
Max Pdiss @ +85C
Power Dissipation
0
2
4
6
8
10
12
14
10 12 14 16 18 20 22 24 26 28 30
+25 C
+85 C
-40 C
ERROR VECTOR MAGNITUDE (%)
OUTPUT POWER (dBm)
EVM vs. Temperature @ 3.5 GHz OFDM
54 Mbps Signal
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 5
AMPLIFIERS - LINEAR & POWER - SMT
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc
Control Voltage (Vpd) +5.5 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +10 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 57.5 mW/°C above 85 °C) 3.74 W
Thermal Resistance
(junction to ground paddle) 17.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vs (Vdc) Icq (mA)
4.75 516
5.0 615
5.25 721
Typical Supply, Current vs. Supply
Voltage, Vcc1 = Vcc2 = Vpd
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC409LP4 Low Stress Injection Molded Plastic Sn/Pb Solder MSL3 [1] H409
XXXX
HMC409LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL3 [2] H409
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 6
Application Circuit
Recommended Component Values
C1 - C5 100pF
C6 - C7 1000pF
C8 10 pF
C9 0.5 pF
C10 1.6 pF
C11 4.7µF
L1, L2 3.9 nH
L3 2.2 nH
R1 56 Ohm
TL1 TL2 TL3
Impedance 50 Ohm 27 Ohm 50 Ohm
Physical Length 0.068” 0.062” 0.164”
Electrical Length 12˚ 11˚ 29˚
PCB Material: 10 mil Rogers 4350, Er = 3.48
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 7
AMPLIFIERS - LINEAR & POWER - SMT
Pin Number Function Description Interface Schematic
1-3, 5, 6, 8, 10 -14,
18, 19, 21, 22, 24 N/C No connection required. These pins may be connected to
RF/DC ground without affecting performance.
4 RFIN This pin is AC coupled
and matched to 50 Ohms.
7 Vpd
Power control pin. For maximum power, this pin should
be connected to 5V thru a 56 Ω resistor. A high-voltage or
small resistor is not recommended for lower idle current.
This voltage can be reduced or the resistor increased.
9 Vbias DC power supply pin for bias circuitry
15, 16, 17 RFOUT RF output and DC bias for the output stage.
20 Vcc2
Power supply voltage for the second amplier stage.
External bypass capacitors and pull up choke are required
as shown in the application schematic.
23 Vcc1
Power supply voltage for the rst amplier stage. External
bypass capacitors are required as shown in the application
schematic.
GND
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
Pin Descriptions
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 8
Evaluation PCB
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108355 [1]
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3, J4 2 mm DC Header
C1 - C5 100 pF Capacitor, 0402 Pkg.
C6 - C7 1000 pF Capacitor, 0603 Pkg.
C8 10 pF Capacitor, 0402 Pkg.
C9 0.5 pF Capacitor, 0603 Pkg.
C10 1.6 pF Capacitor, 0603 Pkg.
C11 4.7 µF, Tantalum
L1, L2 3.9 nH Inductor, 0603 Pkg.
L3 2.2 nH Inductor, 0402 Pkg. Toko
R1 56 Ohm Resistor, 0603 Pkg.
U1 HMC409LP4 / HMC409LP4E Amplier
PCB [2] 108353 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
Mouser Electronics
Authorized Distributor
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Analog Devices Inc.:
HMC409LP4E HMC409LP4ETR 108355-HMC409LP4