BUZ71
N - CHANNEL 50V - 0.085Ω- 17A TO-220
STripFETPOWER MOSFET
■TYPICALRDS(on) = 0.085 Ω
■AVALANCHERUGGEDTECHNOLOGY
■100%AVALANCHE TESTED
■HIGHCURRENT CAPABILITY
■175oC OPERATINGTEMPERATURE
APPLICATIONS
■HIGHCURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAYDRIVERS
■REGULATORS
■DC-DC& DC-AC CONVERTERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 1999
123
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 50 V
V
DGR Drain- gate Voltage (RGS =20kΩ)50V
V
GS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C17A
I
DM Drain Current (pulsed) 68 A
Ptot Total Dissipation at Tc=25o
C60W
T
stg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
DIN HUMIDITY CATEGORY (DIN 40040) E
IEC CLIMATIC CATEGORY (DIN IEC 68-1) 55/150/56
First digit of the datecode being Zor Kidentifies silicon characterized in this datasheet.
TYPE VDSS RDS(on) ID
BUZ71 50 V < 0.1 Ω17 A
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 oC/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax) 17 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =25V) 50 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS =0 50 V
I
DSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRating T
j=125o
C1
10 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 20 V ±100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID=1mA 2.1 3 4 V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D= 9 A 0.085 0.1 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS =25V I
D=9A 4 7.7 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 760
100
30
pF
pF
pF
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =30V I
D=8A
R
GS =50 Ω VGS =10V 20
65
70
35
ns
ns
ns
ns
BUZ71
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ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM Source-drain Current
Source-drain Current
(pulsed)
17
68 A
A
VSD (∗)ForwardOnVoltage I
SD =28A V
GS =0 1.8 V
t
rr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 14 A di/dt = 100 A/µs
VDD =30V T
j=150o
C65
0.17
ns
µC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
SafeOperating Area Thermal Impedance
BUZ71
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OutputCharacteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
Transfer Characteristics
Static Drain-source On Resistance
CapacitanceVariations
BUZ71
4/8
NormalizedGate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
NormalizedOn Resistancevs Temperature
BUZ71
5/8
Fig. 1: UnclampedInductiveLoad Test Circuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2: UnclampedInductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times
BUZ71
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
BUZ71
7/8
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BUZ71
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