A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
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e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 45 V
BVCEO IC = 5.0 mA 45 V
BVCES IC = 5.0 mA 45 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCE = 28 V 1.0 mA
hFE VCE = 5.0 V IC = 100 mA 10 200 ---
PGVCE = 28 V Pout = 5.0 W f = 1025 to 1150 MHz
PULSE WIDTH =10 µS DUTY CYCLE =1.0% 9.5 dB
NPN SILICON RF POWER TRANSISTOR
SD1526-08
DESCRIPTION:
The ASI SD1526-08 is a Common
Base Device Designed for IFF, DME,
and Tacan Pulse Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Low Thermal Resistance
MAXIMUM RATINGS
IC1.0 A
VCES 45 V
PDISS 21.9 W @ T C = 25 °C
TJ-55 °C to +200 °C
TSTG -55 °C to +150 °C
θ
θθ
θJC 8.0 °C/W
PACKAGE STYLE 250 2L FLG (A)
1 = COLLECTOR 2 = EMITTER
3 = BASE
